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http://dx.doi.org/10.14478/ace.2021.1085

Optimization of an Ozone-based Advanced Oxidation Process for the Simultaneous Removal of Particulate Matters and Nitrogen Oxides in a Semiconductor Fabrication Process  

Uhm, Sunghyun (Plant Process Development Center, Institute for Advanced Engineering)
Lee, Seung Jun (R&D Center, Plasma Technology Co. Ltd.)
Ko, Eun Ha (R&D Center, Plasma Technology Co. Ltd.)
Hong, Gi Hoon (Plant Process Development Center, Institute for Advanced Engineering)
Hwang, Sangyeon (Plant Process Development Center, Institute for Advanced Engineering)
Publication Information
Applied Chemistry for Engineering / v.32, no.6, 2021 , pp. 659-663 More about this Journal
Abstract
10 m3/min (CMM) multi-pollutants abatement system was successfully developed by effectively integrating ozone oxidation, wet scrubbing, and wet electrostatic precipitation for the simultaneous removal of particulate matters (PMs) and NOx in a semiconductor fabrication process. The sophisticated control and optimization of operating parameters were conducted to maximize the destruction and removal efficiency of NOx. In particular, the stability test of a wet electrostatic precipitator was carried out in parallel for 30 days to validate the reliability of core parts including a power supply. An O3/NO ratio, which is the most important operating parameter, was optimized to be about 1.5 and the optimization of wet scrubbing with a reducing agent made it possible to analyze the contribution of neutralization reaction.
Keywords
Air pollution control; Ozone oxidation; Wet electrostatic precipitation; NOx; Particulate matters;
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