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http://dx.doi.org/10.3807/JOSK.2014.18.3.283

Enhanced Cathodoluminescence of KOH-treated InGaN/GaN LEDs with Deep Nano-Hole Arrays  

Doan, Manh-Ha (Department of Electrical and Computer Engineering, Ajou University)
Lee, Jaejin (Department of Electrical and Computer Engineering, Ajou University)
Publication Information
Journal of the Optical Society of Korea / v.18, no.3, 2014 , pp. 283-287 More about this Journal
Abstract
Square lattice nano-hole arrays with diameters and periodicities of 200 and 500 nm, respectively, are fabricated on InGaN/GaN blue light emitting diodes (LEDs) using electron-beam lithography and inductively coupled plasma reactive ion etching processes. Cathodoluminescence (CL) investigations show that light emission intensity from the LEDs with the nano-hole arrays is enhanced compared to that from the planar sample. The CL intensity enhancement factor decreases when the nano-holes penetrate into the multiple quantum wells (MQWs) due to the plasma-induced damage and the residues. Wet chemical treatment using KOH solution is found to be an effective method for light extraction from the nano-patterned LEDs, especially, when the nano-holes penetrate into the MQWs. About 4-fold CL intensity enhancement factor is achieved by the KOH treatments after the dry etching for the sample with a 250-nm deep nano-hole array.
Keywords
GaN; Light-emitting diode; Nano-hole array; Wet etching; Cathodoluminescence;
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