• Journal of the Korean Ceramic Society
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• v.42 no.10 s.281
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• pp.645-648
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• 2005

To fabricate a (100) silicon hard master, we used anisotropic wet etching for the embossing. The etching chemical for the sili­con wafer was a TMAH 25$\%$ solution. The anisotropic wet etching produces a smooth sidewall surface inclined at 54.7°, and the surface roughness of the fabricated master is about 1 nm. After spin coating an organic-inorganic sol-gel hybrid resin on a silicon substrate, we used the fabricated master to form patterns on the silicon substrate. Thus, we successfully obtained patterns via the hot embossing technique with the (100) silicon hard master. Moreover, by using a single hydrophobic surface treatment of the master, we succeeded in achieving uniform surface roughness of the embossed patterns for more than ten embossments.

• Journal of Electrical Engineering and Technology
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• v.3 no.2
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• pp.271-275
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• 2008

The MAM(Megasonic Agitated Module) has been fabricated for improving the characteristics of wet etching. The characteristics of the MAM are investigated during the wet etching with and without megasonic agitation in this paper. The adoption of the MAM has improved the characteristics of wet etching, such as the etch rate, etch uniformity, and surface roughness. Especially, the etching uniformity on the entire wafer was less than ${\pm}1%$ in both cases of Si and glass. Generally, the initial root-mean-square roughness($R_{rms}$) of the single crystal silicon was 0.23nm. Roughnesses of 566nm and 66nm have been achieved with magnetic stirring and ultrasonic agitation, respectively, by some researchers. In this paper, the roughness of the etched Si surface is less than 60 nm. Wet etching of silicon with megasonic agitation can maintain nearly the original surface roughness during etching. The results verified that megasonic agitation is an effective way to improve etching characteristics of the etch rate, etch uniformity, and surface roughness and that the developed micromachining system is suitable for the fabrication of devices with complex structures.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1998.05a
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• pp.3-3
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• 1998

The atmospheric corrosIOn properties of Zinc (Zn) under wet/dry transition of $H_20$ film were investigated in this study. The atmospheric corrosion of metal is usually occurred as a result of repetitious thickness transition (so called wet/dry transition) of liquid phase which is covering the metal surface. Corrosion potential and the polarization behaviour of Zn during liquid film thickness transition were measured by Kelvin probe method which IS using vibrating reference electrode without touching the liquid film. The oxidized states of Zn as a result of successive wet/dry transition were also investigated by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The results show that the corrosion potential and the corrosIOn rate of Zn both are increasing during drying. However, the corrOSIon rate is decreasing again when the Zn surface is completely dried while the corrosion potential still remains high. This behaviour can be explained by the polarization behaviour change of Zn according to the $H_20$ film thickness change. The completely dried surface is consisted mostly with Zn and ZnO phases. After a number of cycles of wet/dry transition, however, the oxidized Zn phase of ${\varepsilon}-Zn(OH)_2$, which has rather voluminous and defected structure, were found.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.13 no.9
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• pp.818-826
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• 2001

In this study, in-situ performance test of a wet surface finned-tube evaporator of an air source heat pump which has a rating capacity of 20RT is carried out. Since test conditions, such as indoor and outdoor air conditions cannot be controlled to satisfy the standard test conditions, experiments are done with the inlet air conditions as they exist, From the experimental data, air side heat and mass transfer coefficients were calculated by the well known heat and mass transfer analogy and tube-by-tube method. since current procedure underpredicted the experimental sensible heat factor(SHF), a proper empirical parameter was introduced to predict the experimental data with satisfactory results. This study provides the method of evaluating the heat and mass transfer coefficients of a wet surface finned-tube evaporator of which in-situ performance test in necessary.

• International Journal of Air-Conditioning and Refrigeration
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• v.10 no.4
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• pp.211-219
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• 2002

In this study, in-situ performance test of a wet surface finned-tube evaporator of an air source heat pump which has a rating capacity of 20 RT is carried out. Since test conditions, such as indoor and outdoor air conditions cannot be controlled to satisfy the standard test conditions, experiments are done with the inlet air conditions as they exist. From the experimental data, air side heat and mass transfer coefficients were calculated by the well known heat and mass transfer analogy and tube-by-tube method. Since current procedure underpredicted the experimental sensible heat factor (SHF), a proper empirical parameter was introduced to predict the experimental data with satisfactory results. This study provides the method of evaluating the heat and mass transfer coefficients of a wet surface finned-tube evaporator of which in-situ performance test is necessary.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.05a
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• pp.83-84
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• 1999

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.19-20
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• 2006

Two methods that can reduce reflectance in solar cells are surface texturing and anti-reflection coating. Wet chemical etching is a typical method that surface texturing of multi-crystalline silicon. Wet chemical etching methods are the acid texturization of saw damage on the surface of multi-crystalline silicon or double-step chemical etching after KOH saw damage removal too. These methods of surface texturing are realized by chemical etching in acid solutions HF-$HNO_3$-$H_2O$. In this solutions we can reduce reflectance spectra by simple process etching of multi-crystalline silicon surface. We have obtained reflectance of 27.19% m 400~1100nm from acidic chemical etching after KOH saw damage removal. This result is about 7% less than just saw damage removal substrate. The surface morphology observed by microscope and scanning electron microscopy (SEM).

• Korean Journal of Metals and Materials
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• v.47 no.11
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• pp.748-753
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• 2009

The surface morphology and the surface roughness of n-type SiC induced by wet-treatment using 45% KOH and buffered oxide etchant (BOE-1HF : $6H_2O$) were investigated by atomic force microscopy (AFM). While Si-face of SiC could be etched by alkali solutions such as KOH, acidic solutions such as BOE were hardly able to etch SiC. When the rough SiC samples were used, the surface roughness of etched sample was decreased after wet-treatment regardless of etchant, due to the planarization the of surface by widening of scratches formed by mechanical polishing. It was observed that the initial etching was affected by the energetically unstable sites, such as dangling bond and steps. However, when a relatively smooth sample was used, the surface roughness was rapidly increased after treatment at $180^{\circ}C$ for 1 hr and at room temperature for 4 hr by using KOH solution, resulting from the nano-sized structures such as pores and bumps. This indicates that porous SiC surface can be achieved by using purely chemical treatment.

• Journal of Sensor Science and Technology
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• v.30 no.1
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• pp.10-14
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• 2021

Wet etching is more economical than dry etching and provides a uniform etching depth regardless of wafer sizes. Typically, potassium hydroxide (KOH) and tetra-methyl-ammonium hydroxide (TMAH) solutions are widely used for the wet etching of silicon. However, there is a limit to the wet etching process when a material deposited on an unetched surface reacts with an etching solution. To solve this problem, in this study, an apparatus was designed and manufactured to physically block the inflow of etchants on the surface using a rubber O-ring. The proposed apparatus includes a heater and a temperature controller to maintain a constant temperature during etching, and the hydrostatic pressure of the etchant is considered for the thin film structure. A corrugation membrane with a diameter of 800 ㎛, thickness of 600 nm, and corrugation depth of 3 ㎛ with two corrugations was successfully fabricated using the prepared device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.3
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• pp.194-197
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• 2013

We investigated the effect of etching time on the surface roughness, and electrical and optical properties of ZnO and 2 wt% Al-doped ZnO (AZO) films. The ZnO and AZO films were deposited on glass substrates by RF magnetron sputtering technique. The etching experiment was carried out using a solution of 5% HCl at room temperature. The surface roughness was characterized by Atomic Force Microscopy. The electrical property was measured by Hall measurement system and 4-point probe. The optical property was characterized by UV-vis spectroscopy. After the wet chemical etching, the surface textures were obtained on the surface of the ZnO and AZO films. With the increase of etching time, the surface roughness (RMS) of the films increased and the transmittance of the films was observed to decrease. For the AZO film, a low resistivity of $1.0{\times}10^{-3}\;{\Omega}{\cdot}cm$ was achieved even after the etching.