The Effect of Surface Roughness on SiC by Wet Chemical Etching
![]() ![]() ![]() |
Kim, Jae-Kwan
(Department of Materials Science and Metallurgical Engineering, Sunchon National University)
Jo, Young-Je (Department of Materials Science and Metallurgical Engineering, Sunchon National University) Han, Seung-Cheol (Department of Materials Science and Metallurgical Engineering, Sunchon National University) Lee, Hae-Yong (LumiGNtech) Lee, Ji-Myon (Department of Materials Science and Metallurgical Engineering, Sunchon National University) |
1 | J. L. Cantin, H. J. von Bardeleben, Y. Shishkin, Y. Ke, R. P. Devaty, and W. J. Choyke, Phys. Rev. Lett. 92, 1 (2004) DOI PUBMED ScienceOn |
2 | F. Yun, M. A. Reshchikov, L. He, and H. Morkoc, C. K. Inoki, and T. S. Kuan, Appl. Phys. Lett. 81, 4142 (2002) DOI ScienceOn |
3 | F. Yun, M. A. Reshchikov, L. He, T. King, D. Huang, H. Morkoç, C. K. Inoki, and T. S. Kuan, Appl. Phys. Lett. 81, 22 (2002) DOI ScienceOn |
4 | Y. Ke, C. Moissin, S. Gaan, R. M. Feenstra, R. P. Devaty, and W. J. Choyke, Mat. Sci. Forum. 527-529, 743 (2006) DOI |
5 | J. S. Shor and A. D. Kurtz, J. Electrochem. Soc. 141, 778 (1994) DOI |
6 | G. W. Trusks, Krishnan Raghavachari, G. S. Higashi, and Y. J. Chabal, Phys. Rev. Lett. 65, 504 (1990) DOI ScienceOn |
7 | J. K. Kim, T. S. Kim, Y. J. J, and J. M. Lee, J. Kor. Inst. Met. & Mater. 46, 3 (2008) |
8 | H. Seidel, L. Csepregi, A. Heuberger, and H. Baumgartel, J. Electrochem. Soc. 137, 3612 (1990) DOI |
9 | C. K. Inoki, T. S. Kuan, C. D. Lee, Ashutosh Sagar, R. M. Feenstra, D. D. Koleske, D. J. Diaz, P. W. Bohn, and I. Adesida, J. Eelectron. Mater. 32, 8 (2003) |
10 | S. A. Sakwe, R. Muller, and P. J. Wellmann, J. Cryst. Growth. 289, 520 (2006) DOI ScienceOn |
11 | J. L. Weyher, S. Lazar, J. Borysiuk, and J. Pernot, Phys. Stat. Sol. 4, 578 (2005) |
12 | P. G. Neudeck, J. Electron Mater. 24, 4 (1995) DOI |
13 | Y. Shishkin, Y. Ke, R. P. Devaty, and W. J. Choyke, J. Appl. Phys. 97, 044908 (2005) DOI ScienceOn |
14 | M. Mynbaeva, S. E. Saddow, G. Melnychuk, I. Nikitina, M. Scheglov, A. Sitnikova, N. Kuznetsov, and K. Mynbaev, V. Dmitriev, Appl. Phys. Lett. 78, 1 (2001) DOI ScienceOn |
15 | J. Hong, R. J. Shul, L. Zhang, L. F. Lester, H. Cho, Y. B. Hahn, D. C. Hays, K. B. Jung, S. J. Pearton, C. M. Zetterling, and M. Ostling, J. Electron. Mater. 28, 3 (1999) |
16 | L. Jiang, N. O. V. Plank, M. A. Blauw, R. Cheung, and E. van der Drift, J. Phys. D. 37, 1809 (2004) DOI ScienceOn |
17 | S. Nakamura, T. Kimoto, H. Matsunami, S. Tanaka, N. Teraguchi, an,d A. Suzuki, Appl. Phys. Let. 76, 23 (2000) |
18 | M. Syvajarvi,z R. Yakimova, and E. Janzen, J. Electrochem. Soc. 147, 3519 (2000) DOI ScienceOn |
19 | C. K. Park, J. H. An, W. J. Lee, B. C. Shin, and S. Nishino, Mat. Sci. Forum. 527-529, 267 (2006) DOI |
20 | H. S. Kim, J. H. S, and C. G. Park, J. Kor. Inst. Met. & Mater. 43, 1 (2005) |
21 | S. W. King, R. J. Nemanich, and R. F. Davis, J. Electrochem. Soc. 146, 1910 (1999) DOI ScienceOn |
![]() |