Investigation of Wet Chemical Etching for Surface Texturing of Multi-crystalline Silicon Wafers

다결정 실리콘 웨이퍼의 표면 텍스쳐링을 위한 습식 화학 식각에 대한 연구

  • 김범호 (세종대학교 대학원 전자공학과) ;
  • 이현우 (세종대학교 대학원 전자공학과) ;
  • 이은주 (세종대학교 대학원 전자공학과) ;
  • 이수홍 (세종대학교 대학원 전자공학과)
  • Published : 2010.04.01

Abstract

Two methods that can reduce reflectance in solar cells are surface texturing and anti-reflection coating. Wet chemical etching is a typical method that surface texturing of multi-crystalline silicon. Wet chemical etching methods are the acid texturization of saw damage on the surface of multi-crystalline silicon or double-step chemical etching after KOH saw damage removal too. These methods of surface texturing are realized by chemical etching in acid solutions HF-$HNO_3$-$H_2O$. In this solutions we can reduce reflectance spectra by simple process etching of multi-crystalline silicon surface. We have obtained reflectance of 27.19% m 400~1100nm from acidic chemical etching after KOH saw damage removal. This result is about 7% less than just saw damage removal substrate. The surface morphology observed by microscope and scanning electron microscopy (SEM).

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