• Journal of the Korean institute of surface engineering
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• v.45 no.3
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• pp.111-116
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• 2012

Oblique angle deposition (OAD) is a physical vapor deposition method which utilizes non-normal angles between the substrate and the vaporizing source. It has been known that tilting the substrate changes the properties of the film deposited on it, which was thought to be a result of morphological change of the film. In this study, OAD has been applied to prepare single and multilayer Al films by magnetron sputtering. The magnetron sputtering source of 4 inch diameter was used to deposit the films. Al films have been deposited on Si wafers and cold-rolled steel sheets. The multilayer films were prepared by changing the tilting angle upside down at each layer interval, which means that when the first layer was deposited at an angle of $+45^{\circ}$, the second layer was deposited at an angle of $-45^{\circ}$, and vice versa. The microstructure, surface roughness and reflectance of the films were investigated using a scanning electron microscope, a surface profiler and a spectrophotometer, respectively. The corrosion resistance was measured and compared using the salt spray test. The single layer film prepared at an oblique angle of $60^{\circ}$ prepared at other angles. However, for the multilayer films, the film prepared at an oblique angle of $45^{\circ}$ showed the most compact and featureless structure. The multilayer films were found to exhibit higher corrosion resistance than the single layer films.

• Journal of the Korean institute of surface engineering
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• v.47 no.5
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• pp.227-232
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• 2014

In this study, we propose the application of doping process technology for atmospheric pressure plasma. The plasma treatment means the wafer is warmed via resistance heating from current paths. These paths are induced by the surface charge density in the presence of illuminating Argon atmospheric plasmas. Furthermore, it is investigated on the high-concentration doping to a selective partial region in P type solar cell wafer. It is identified that diffusion of impurities is related to the wafer temperature. For the fixed plasma treatment time, plasma currents were set with 40, 70, 120 mA. For the processing time, IR(Infra-Red) images are analyzed via a camera dependent on the temperature of the P type wafer. Phosphorus concentrations are also analyzed through SIMS profiles from doped wafer. According to the analysis for doping process, as applied plasma currents increase, so the doping depth becomes deeper. As the junction depth is deeper, so the surface resistance is to be lowered. In addition, the surface charge density has a tendency inversely proportional to the initial phosphorus concentration. Overall, when the plasma current increases, then it becomes higher temperatures in wafer. It is shown that the diffusion of the impurity is critically dependent on the temperature of wafers.

• Journal of Welding and Joining
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• v.30 no.3
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• pp.26-31
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• 2012

Three-dimensional integrated circuit (3D IC) technology has become increasingly important due to the demand for high system performance and functionality. We have evaluated the effect of Buffered oxide etch (BOE) on the interfacial bonding strength of Cu-Cu pattern direct bonding. X-ray photoelectron spectroscopy (XPS) analysis of Cu surface revealed that Cu surface oxide layer was partially removed by BOE 2min. Two 8-inch Cu pattern wafers were bonded at $400^{\circ}C$ via the thermo-compression method. The interfacial adhesion energy of Cu-Cu bonding was quantitatively measured by the four-point bending method. After BOE 2min wet etching, the measured interfacial adhesion energies of pattern density for 0.06, 0.09, and 0.23 were $4.52J/m^2$, $5.06J/m^2$ and $3.42J/m^2$, respectively, which were lower than $5J/m^2$. Therefore, the effective removal of Cu surface oxide is critical to have reliable bonding quality of Cu pattern direct bonds.

• Korean Journal of Materials Research
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• v.29 no.9
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• pp.542-546
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• 2019

We investigate the characteristics of self-assembled quantum dot infrared photodetectors(QDIPs) based on doping level. Two kinds of QDIP samples are prepared using molecular beam epitaxy : $n^+-i(QD)-n^+$ QDIP with undoped quantum dot(QD) active region and $n^+-n^-(QD)-n^+$ QDIP containing Si direct doped QDs. InAs QDIPs were grown on semi-insulating GaAs (100) wafers by molecular-beam epitaxy. Both top and bottom contact GaAs layer are Si doped at $2{\times}10^{18}/cm^3$. The QD layers are grown by two-monolayer of InAs deposition and capped by InGaAs layer. For the $n^+-n^-(QD)-n^+$ structure, Si dopant is directly doped in InAs QD at $2{\times}10^{17}/cm^3$. Undoped and doped QDIPs show a photoresponse peak at about $8.3{\mu}m$, ranging from $6{\sim}10{\mu}m$ at 10 K. The intensity of the doped QDIP photoresponse is higher than that of the undoped QDIP on same temperature. Undoped QDIP yields a photoresponse of up to 50 K, whereas doped QDIP has a response of up to 30 K only. This result suggests that the doping level of QDs should be appropriately determined by compromising between photoresponsivity and operating temperature.

• Safety and Health at Work
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• v.10 no.3
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• pp.347-354
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• 2019

Background: The aim of this study was to describe the types of diseases that developed in semiconductor workers who have registered with the Korea Workers' Compensation and Welfare Service (KWCWS) and to identify potential common occupational characteristics by the type of claimed disease. Methods: A total of 55 semiconductor workers with cancer or rare diseases who claimed to the KWCWS were compared based on their work characteristics and types of claimed diseases. Leukemia, non-Hodgkin lymphoma, and aplastic anemia were grouped into lymphohematopoietic (LHP) disorder. Results: Leukemia (n = 14) and breast cancer (n = 10) were the most common complaints, followed by brain cancer (n = 6), aplastic anemia (n = 6), and non-Hodgkin lymphoma (n = 4). LHP disorders (n = 24) accounted for 43%. Sixty percent (n = 33) of registered workers (n = 55) were found to have been employed before 2000. Seventy-six percent (n = 42) of registered workers and 79% (n = 19) among the registered workers with LHP (n = 24) were found to be diagnosed at a relatively young age, ${\leq}40years$. A total of 18 workers among the registered semiconductor workers were finally determined to deserve compensation for occupational disease by either the KWCWS (n = 10) or the administrative court (n = 8). Eleven fabrication workers who were compensated responded as having handled wafers smaller than eight inches in size. Eight among the 18 workers compensated (44 %) were found to have ever worked at etching operations. Conclusion: The distribution of cancer and rare diseases among registered semiconductor workers was closely related to the manufacturing era before 2005, ${\leq}8$ inches of wafer size handled, exposure to clean rooms of fabrication and chip assembly operations, and etching operations.

• Journal of the Semiconductor & Display Technology
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• v.18 no.1
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• pp.15-20
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• 2019

Inspection and measurement of surface quality is one of the most critical processes for manufacturing products such as semiconductor wafers, sapphire substrates, and display panels. The vibrations of the inspection and measurement devices are supposed to be the most dominant factors for severe measurement errors and longer measuring time. In this study, dynamic characteristics of an inspection and measurement device are analyzed through frequency response experiment and computer simulation to obtain parameters such as frequencies, magnitudes, mode shapes, and periods of vibrations. And then an active damper which consists of sensor, interface board, and actuator is designed based on the parameters to formulate the most effective reaction signal to suppress the vibrations which is generated by an interface board, and provided by an actuator. If the vibrations are measured by the sensor, the active damper immediately generates and provides the corresponding reaction signal to inspection and measurement device. The result shows that the active damper can suppress structural vibrations effectively and reduce measuring time of the device and enhance the productivity.

• New Physics: Sae Mulli
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• v.68 no.11
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• pp.1203-1207
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• 2018

In this study, silica nanowires were formed using silicon oxide films with different oxygen contents, and their microstructure and physical properties were compared with those of silica nanowires formed using Si wafers. The silicon oxide films were fabricated by using a plasma-enhanced chemical vapor deposition method. Silica nanowires were formed by thermally annealing silicon oxide films coated with nickel films as a catalyst. In the case of silicon oxide films having an oxygen content of approximately 50 at.% or less, the formation mechanism, microstructure, and physical properties of the nanowires were not substantially different from those of the silicon wafer. In particular, the uniformity of the thickness showed better behavior in the silicon oxide films. These results imply that silicon oxide films can be used as an alternative for fabricating high-quality silica nanowires at low cost.

• Design & Manufacturing
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• v.15 no.4
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• pp.65-71
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• 2021

In the early days of laser invention, it was simply used as a measuring tool, but as lasers became more common, they became an indispensable processing tool in the industry. Short-wavelength lasers are used to make patterns on wafers used in semiconductors depending on the wavelength, such as CO2 laser, YAG laser, green laser, and UV laser. At first, the hole of the PCB board mainly used for electronic parts was not thin and the hole size was large, so a mechanical drill was used. However, in order to realize product miniaturization and high integration, small hole processing lasers have become essential, and pattern exposure for small hole sizes has become essential. This paper intends to analyze the characteristics through patterns by exposing the PCB substrate through DMD and polygon scanner, which are different optical systems. Since the optical systems are different, the size of the patterns was made the same, and exposure was performed under the optimal conditions for each system. Pattern characteristics were analyzed through a 3D profiler. As a result of the analysis, there was no significant difference in line width between the two systems. However, it was confirmed that dmd had better pattern precision and polygon scanner had better productivity.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.3
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• pp.115-120
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• 2022

A brown ring (hereinafter referred to as BR) on the inner surface of a quartz glass crucible used in the manufacturing process of a silicon ingot for semiconductor wafers was studied. BR is 20~30 ㎛ in size and has an asymmetric brown ring shape. The size and distribution of BR were different depending on the crucible location, and the size and distribution of BR were the largest and most abundant in the round part with the highest crucible temperature during Si ingot growth. BR contains cristobalite, which has a higher coefficient of thermal expansion than quartz glass, so it is considered that surface cracks appear. The color development of BR and pin holes are presumed to be due to oxygen vacancies.

• Korean Journal of Materials Research
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• v.32 no.9
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• pp.396-402
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• 2022

In this study, surface roughness and interfacial defect characteristics were analyzed after forming a high-k oxide film on the surface of a prime wafer and a test wafer, to study the possibility of improving the quality of the test wafer. As a result of checking the roughness, the deviation in the test after raising the oxide film was 0.1 nm, which was twice as large as that of the Prime. As a result of current-voltage analysis, Prime after PMA was 1.07 × 10 A/cm² and Test was 5.61 × 10 A/cm², which was about 5 times lower than Prime. As a result of analyzing the defects inside the oxide film using the capacitance-voltage characteristic, before PMA Prime showed a higher electrical defect of 0.85 × 10¹² cm^-2 in slow state density and 0.41 × 10¹³ cm^-2 in fixed oxide charge. However, after PMA, it was confirmed that Prime had a lower defect of 4.79 × 10¹¹ cm^-2 in slow state density and 1.33 × 10¹² cm^-2 in fixed oxide charge. The above results confirm the difference in surface roughness and defects between the Test and Prime wafer.