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http://dx.doi.org/10.3740/MRSK.2019.29.9.542

Effect of Si Doping in Self-Assembled InAs Quantum Dots on Infrared Photodetector Properties  

Seo, Dong-Bum (Department of Materials Science & Engineering, Chungnam National University)
Hwang, Je-hwan (Division of Convergence Technology, Korea Research Institute of Standard Science)
Oh, Boram (Division of Convergence Technology, Korea Research Institute of Standard Science)
Kim, Jun Oh (Division of Convergence Technology, Korea Research Institute of Standard Science)
Lee, Sang Jun (Division of Convergence Technology, Korea Research Institute of Standard Science)
Kim, Eui-Tae (Department of Materials Science & Engineering, Chungnam National University)
Publication Information
Korean Journal of Materials Research / v.29, no.9, 2019 , pp. 542-546 More about this Journal
Abstract
We investigate the characteristics of self-assembled quantum dot infrared photodetectors(QDIPs) based on doping level. Two kinds of QDIP samples are prepared using molecular beam epitaxy : $n^+-i(QD)-n^+$ QDIP with undoped quantum dot(QD) active region and $n^+-n^-(QD)-n^+$ QDIP containing Si direct doped QDs. InAs QDIPs were grown on semi-insulating GaAs (100) wafers by molecular-beam epitaxy. Both top and bottom contact GaAs layer are Si doped at $2{\times}10^{18}/cm^3$. The QD layers are grown by two-monolayer of InAs deposition and capped by InGaAs layer. For the $n^+-n^-(QD)-n^+$ structure, Si dopant is directly doped in InAs QD at $2{\times}10^{17}/cm^3$. Undoped and doped QDIPs show a photoresponse peak at about $8.3{\mu}m$, ranging from $6{\sim}10{\mu}m$ at 10 K. The intensity of the doped QDIP photoresponse is higher than that of the undoped QDIP on same temperature. Undoped QDIP yields a photoresponse of up to 50 K, whereas doped QDIP has a response of up to 30 K only. This result suggests that the doping level of QDs should be appropriately determined by compromising between photoresponsivity and operating temperature.
Keywords
quantum dots; InAs; infrared photodetectors; molecular beam epitaxy;
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