• Journal of the Semiconductor & Display Technology
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• v.12 no.4
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• pp.39-44
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• 2013

In the semiconductor heat-treatment process, the temperature uniformity determines the film quality of a wafer. This film quality effects on the overall yield rate. The heat transfer of the wafer surface in the heat-treatment process equipment is occurred by convection and radiation complexly. Because of this, there is the nonlinearity between the wafer temperature and reactor. Therefore, the accurate prediction of temperature on the wafer surface is difficult without the direct measurement. The thermal camera and the T/C wafer are general ways to confirm the temperature uniformity on the heat-treatment process. As above ways have limit to measure the temperature in the precise domain under the micro-scale. In this study, we developed the thin film type temperature sensor using the MEMS technology to establish the system which can measure the temperature under the micro-scale. We combined the experiment and numerical analysis to verify and calibrate the system. Finally, we measured the temperature on the wafer surface on the semiconductor process using the developed system, and confirmed the temperature variation by comparison with the commercial T/C wafer.

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.86-90
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• 2018

Standards related to express the non-flatness of a wafer are reviewed and discussed, for example, bow, warp, and sori. Novel wafer warpage measurement method is proposed for 3D stacked IC application. The new way measures heat transfer from a heater to a wafer, which is a function of the contact area between these two surfaces and in turn, this contact area depends on the wafer warpage. Measurement options such as heating from room temperature and cooling from high temperature were experimentally examined. The heating method was found to be sensitive to environmental conditions. The cooling technique showed more robust and repeatable results and the further investigation for the optimal cooling condition is underway.

• Journal of Surface Science and Engineering
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• v.46 no.6
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• pp.283-289
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• 2013

The experimental study for the temperature uniformity on the wafer using liquid-vapor phase heat transfer mechanism is performed. For the experiment, the heater plate which is consist of stainless steel container, working fluid and electrical heater is designed, manufactured and tested at the range of 600 to $850^{\circ}C$. The results showed that the phase change type heater plate was much more uniform and stable temperature on the heater plate surface and wafer than the uniform heat flux type heater plate at the atmospheric condition. Also, the results of 300 mm outer diameter of heater plate showed that the same temperature uniformity compared with 230 mm.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.4
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• pp.273-279
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• 2002

This paper presents a fabrication technology for the integration of single crystal Si microstructures with on-chip circuitry. It is a dissolved wafer technique that combines an electro-chemical etch-stop for the protection of circuitry with an impurity-based etch-stop for the microstructures, both of which are defined in an n-epi layer on a p-type Si wafer. A CMOS op. amp. has been integrated with $p^{++}$ Si accelerometers using this process. It has a gain of 68 dB and an output swing within 0.2 V of its power supplies, unaffected by the wafer dissolution. The accelerometers have $3{\;}\mu\textrm{m}$ thick suspension beams and $15{\;}\mu\textrm{m}$ thick proof masses. The structural and electrical integrity of the fabricated devices demonstrates the success of the fabrication process. A variety of lead transfer methods are shown, and process details are discussed.

• Journal of the Semiconductor & Display Technology
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• v.6 no.2 s.19
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• pp.35-40
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• 2007

An integrated material removal model considering thermal, chemical and contact mechanical effects in CMP process is proposed. These effects are highly coupled together in the current modeling effort. The contact mechanics is employed in the model incorporated with the heat transfer and chemical reaction mechanisms. The mechanical abrasion actions happening due to the mechanical contacts between the wafer and abrasive particles in the slurry and between the wafer and pad asperities cause friction and consequently generate heats, which mainly acts as the heat source accelerating chemical reaction(s) between the wafer and slurry chemical(s). The proposed model may be a help in understanding multi-physical interactions in CMP process occurring among the wafer, pad and various consumables such as slurry.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.06a
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• pp.621-622
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• 2009

• Transactions of the Korean Society of Mechanical Engineers B
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• v.27 no.11
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• pp.1525-1533
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• 2003

In the precision hot plate for wafer processing, uniform temperature of the upper plate is one of key factors affecting the quality of wafers. The state-of-the-art precision hot plates require temperature Variations less than $\pm$0.4$^{\circ}C$ during heating to 15$0^{\circ}C$, Which is difficult to be obtained only by the improvement of manufacturing techniques alone. In this study, computer aided heat transfer analysis was carried out to obtain the temperature distribution of the currently used reference hot plate for 200mm wafer. The analysis on the reference model assuming constant heat generation rate and uniform heating area showed total variation of 0.926$^{\circ}C$ at 15$0^{\circ}C$. One of the new design approaches based on the change of heating location together with different heat generation rate resulted in total variation of 0.297$^{\circ}C$ which is a 68% improvement compared to that of the reference model.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.111-113
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• 2007

Thermal conductivities of copper thin films on silicon wafer was obtained from temperature distribution on the surface of wafer measured by radiation thermometry, when sample was heated with constant temperature ate the both ends in a vacuum and dissipate heat by radiation heat transfer into an environment.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.5
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• pp.1029-1034
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• 2012

This paper presents a cost-effective and high-performance film bulk acoustic resonator (FBAR) duplexer module for US-PCS handset applications. The FBAR device uses a glass wafer level packaging process, which is a more cost-effective alternative to the typical silicon capping process. The maximum insertion losses of the FBAR duplexer at the Tx and Rx bands are of 1.9 and 2.4 dB, respectively. The total thickness of the duplexer module is 1.2 mm, including the glass-wafer bonded Tx/Rx FBAR devices, PCB board, and transfer molding material.

• Journal of Institute of Control, Robotics and Systems
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• v.15 no.12
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• pp.1240-1245
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• 2009

The throughput characteristics of the cluster tool with dual blade robot are analyzed. Using equipment's cycle time chart of the equipment, simple analytic form of the throughput is derived. Then, several important throughput characteristics are analyzed by the throughput formula. First, utilization of the process chamber and the robot are maximized by assigning the equipment to the process whose processing time is near the critical process time. Second, rule for selecting optimal number of process chambers is suggested. It is desirable to select a single process chamber plus a single robot structure for relatively short time process and multi process chambers plus a single robot, namely cluster tool for relatively long time process. Third, throughput variation between equipments due to the wafer transfer time variation is analyzed, especially for the process whose processing time is less than critical process time. And the throughput and the wafer transfer time of the equipments in our fabrication line are measured and compared to the analysis.