Abstract
In the semiconductor heat-treatment process, the temperature uniformity determines the film quality of a wafer. This film quality effects on the overall yield rate. The heat transfer of the wafer surface in the heat-treatment process equipment is occurred by convection and radiation complexly. Because of this, there is the nonlinearity between the wafer temperature and reactor. Therefore, the accurate prediction of temperature on the wafer surface is difficult without the direct measurement. The thermal camera and the T/C wafer are general ways to confirm the temperature uniformity on the heat-treatment process. As above ways have limit to measure the temperature in the precise domain under the micro-scale. In this study, we developed the thin film type temperature sensor using the MEMS technology to establish the system which can measure the temperature under the micro-scale. We combined the experiment and numerical analysis to verify and calibrate the system. Finally, we measured the temperature on the wafer surface on the semiconductor process using the developed system, and confirmed the temperature variation by comparison with the commercial T/C wafer.