• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.40-45
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• 2008

We developed small molecular organic nonvolatile $4F^2$ memory cells using metal layer evaporation followed by $O_2$ plasma oxidation. Our memory cells sandwich an upper ${\alpha}$-NPD layer, Al nanocrystals surrounded by $Al_2O_3$, and a bottom ${\alpha}$-NPD layer between top and bottom electrodes. Their nonvolatile memory characteristics are excellent: the $V_{th},\;V_p$ (program), $V_e$ (erase), memory margin ($I_{on}/I_{off}$), data retention time, and erase and program endurance were 2.6 V, 5.3 V, 8.5 V, ${\approx}1.5{\times}10^2,\;1{\times}10^5s$, and $1{\times}10^3$ cycles, respectively. They also demonstrated symmetrical current versus voltage characteristics and a reversible erase and program process, indicating potential for terabit-level nonvolatile memory.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.404-407
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• 2003

Among the ferroeletric thin films that have been widely investigated for ferroelectric random access memory (FRAM) applications, the $SrBi_2Ta_2O_9$ (SBT) thin film is appropriate as a memory capacitor material due to its excellent fatigue endurance. SBT thin films were etched in high-density $Cl_2/Ar$ in inductively coupled plasma. The maximum etch rate of SBT film is $1834\;{\AA}/min$ under $Cl_2/(Cl_2+Ar)$ of 30 %, rf power of 700 W, dc-bias voltage of -250 V, chamber pressure of 11 mTorr and gas flow rate of 20 sccm.

• Proceedings of the KIEE Conference
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• 1998.07f
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• pp.2088-2090
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• 1998

A low-cost electronic starter is developed to decrease ignition failure significantly through successive starting trial and to prevent overheating at the end of fluorescent lamp life. Moreover, it has an additional feature of being capable of ignition at the recovered lamp voltage without any circuit correction. The developed electronic starter is consisted of four parts - a half wave rectifier circuit, a timer circuit, a switching circuit and a protection circuit. The protection circuit made up of a transistor and capacitors utilizing capacitive characteristics, carries out successive starting trial and end-of-life protection. Lamp ignition is completed within 0.5 seconds with taking advantage of a high preheating current from the half-wave rectifier circuit. Nevertheless, its performance is proved to be very excellent through a standard switching endurance test.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.325-327
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• 2011

In this paper, nonvolatile nano-floating gate memory devices are fabricated with ZnO nanowires and Al nanoparticles on a $SiO_2/Si$ substrate. Al nanoparticles used as floating gate nodes are formed by the sputtering method. The fabricated device exhibits a threshold voltage shift of -1.5 V. In addition, we investigate the endurance and retention characteristics of the nano-floating gate memory device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.501-502
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• 2006

In this paper, new and aging sample of MCCB and ELCB are investigated the main performance test such as short circuit test, mechanical and electrical endurance test, dielectric test and surge current test. The surface conditions of new and aging sample are analyzed by SEM, TGA and DSC. The ELCB occurred badness mainly in short circuit test and surge current test. The badness cause of short circuit test was confirmed due to imperfect contact of contact part.

• Proceedings of the KIPE Conference
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• 2020.08a
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• pp.253-254
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• 2020

High Voltage Direct Current (HVDC) 시스템은 고압 직류송전을 위한 시스템이다. 고압 직류 송전을 위해서는 전력변환기가 교류전력을 직류전력으로 변환해주어야 하는데, 최근에는 모듈형 멀티레벨 컨버터(Modular Multilevel Converter, MMC)가 많이 적용되고 있다. MMC는 다수의 서브모듈이 직렬로 구성되어 있으며 DC-link단에 대용량 커패시터가 없다. MMC의 심각한 사고 중에 하나는 DC측 전력케이블의 단락사고로 시스템에 따라서 수십 kA 정도의 사고전류가 AC측 CB(Circuit Breaker)가 열리기 전까지 수십 ms에서 수백 ms동안 흐른다. 만약 하프브릿지 회로의 서브모듈로 구성된 컨버터에 별도 보호장치가 없으면 단락전류는 서브모듈의 하단 다이오드를 통해서 흐르게 되어 소손되게 된다. 이를 방지하기 위해 단락전류를 바이패스(by-pass) 시키기 위한 별도의 사이리스터를 추가하는데 이 기기의 사양은 DC 단락 전류를 충분히 견딜 수 있어야 한다. 본 논문에서는 사이리스터의 서지 전류 내력을 평가하기 위해 사양을 분석하고 시뮬레이션과 실험을 통해서 검증하였다.

• Journal of the Korean Society of Propulsion Engineers
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• v.19 no.4
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• pp.94-101
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• 2015

Each of power systems of solar cell and fuel cell were configured and validated for long endurance UAV, as the preliminary research for the integration of power systems. Solar power system consisted of solar modules fabricated by solar cells of Sunpower's C60, commercial solar MPPT controller and Li-po battery, and then was validated. The re-start characteristics of hydrogen production from $NaBH_4$ hydrolysis was validated for operating the commercial fuel cell. The average voltage drop of Li-po battery in solar power system was -2.9 V/hour. The performance of re-start characteristics of $NaBH_4$ hydrolysis was stable in sequence mode of mission profile. Each of single systems were satisfied for the proposed mission profile.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.427-427
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• 2012

Ferroelectric-gate field effect transistor based memory using a nanowire as a conducting channel offers exceptional advantages over conventional memory devices, like small cell size, low-voltage operation, low power consumption, fast programming/erase speed and non-volatility. We successfully fabricated ferroelectric nonvolatile memory devices using both n-type and p-type Si nanowires coated with organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] via a low temperature fabrication process. The devices performance was carefully characterized in terms of their electrical transport, retention time and endurance test. Our p-type Si NW ferroelectric memory devices exhibit excellent memory characteristics with a large modulation in channel conductance between ON and OFF states exceeding $10^5$; long retention time of over $5{\times}10^4$ sec and high endurance of over 105 programming cycles while maintaining ON/OFF ratio higher $10^3$. This result offers a viable way to fabricate a high performance high-density nonvolatile memory device using a low temperature fabrication processing technique, which makes it suitable for flexible electronics.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.2
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• pp.269-275
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• 2003

Polysilicon-oxide-nitride-oxide-silicon(SONOS) transistors were fabricated by using 0.35${\mu}{\textrm}{m}$ complementary metal-oxide-semiconductor(CMOS) process technology to realize a low voltage programmable flash memory. The thickness of the tunnel oxide, the nitride, and the blocking oxide were 2.4nm, 4.0nm, and 2.5nm, respectively, and the cell area of the SONOS memory was 1.32$\mu$$m^2$. The SONOS device revealed a maximum memory window of 1.76V with a switching time of 50ms at 10V programming, as a result of the scaling effect of the nitride. In spite of scaling of nitride thickness, memory window of 0.5V was maintained at the end of 10 years, and the endurance level was at least 105 program/erase cycles. Over-erase, which was shown seriously in floating gate device, was not shown in SONOS device.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.68-73
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• 2006

We propose a damascene gate FinFET with Si nanocrystals implemented on bulk silicon wafer for low voltage flash memory device. The use of optimized SRON (Silicon-Rich Oxynitride) process allows a high degree of control of the Si excess in the oxide. The FinFET with Si nanocrystals shows high program/erase (P/E) speed, large $V_{TH}$ shifts over 2.5V at 12V/$10{\mu}s$ for program and -12V/1ms for erase, good retention time, and acceptable endurance characteristics. Si nanocrystal memory with damascene gate FinFET is a solution of gate stack and voltage scaling for future generations of flash memory device. Index Terms-FinFET, Si-nanocrystal, SRON(Si-Rich Oxynitride), flash memory device.