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http://dx.doi.org/10.4313/JKEM.2011.24.4.325

Characteristics of NFGM Devices Constructed with a Single ZnO Nanowire and Al Nanoparticles  

Kim, Sung-Su (Department of Electrical Engineering, Korea University)
Cho, Kyoung-Ah (Department of Electrical Engineering, Korea University)
Kim, Sang-Sig (Department of Electrical Engineering, Korea University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.24, no.4, 2011 , pp. 325-327 More about this Journal
Abstract
In this paper, nonvolatile nano-floating gate memory devices are fabricated with ZnO nanowires and Al nanoparticles on a $SiO_2/Si$ substrate. Al nanoparticles used as floating gate nodes are formed by the sputtering method. The fabricated device exhibits a threshold voltage shift of -1.5 V. In addition, we investigate the endurance and retention characteristics of the nano-floating gate memory device.
Keywords
NFGM; Al nanoparticles; ZnO nanowire;
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  • Reference
1 K. R. Han and J. H. Lee, Jpn. J. Appl. Phys., 47, 2687 (2008).   DOI
2 J. S. Lee, J. Y. Yang, and J. P. Hong, Appl. Phys. lett., 95, 052109 (2009).   DOI
3 B. J. Park, K. A. Cho, and S. S. Kim, J. Nanotechnology, 9, 3 (2009).
4 J. S. Lee, J. Y. Yang, and J. P. Hong, Appl. Phys. Lett., 95, 052109 (2009).   DOI
5 K. I. Han, Y. M. Park, S. Kim, S. H. Choi, K. J. Kim, I. H. Park, and B. G. Park, IEEE Trans. Electron Devices, 54, 359 (2007).   DOI
6 G. Molas, G. Bocquet, M. Jalaguier, E. Gely, M. Masarotto, L. Colonna, J. P. Grampeix, H. Martin, F. Brianceau, P. Vidal, V. Kies, R. Yckache, K. De Salvo, B. Ghibaudo, G. Baron, T. Bongiorno, and C. Lombardo (IEEE International Memory Workshop, Monterey, 2009) p. 1.