JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지
DOI QR코드

DOI QR Code

Small Molecular Organic Nonvolatile Memory Cells Fabricated with in Situ O2 Plasma Oxidation

  • Seo, Sung-Ho (Nano-SOI Process Laboratory, Hanyang University) ;
  • Nam, Woo-Sik (Nano-SOI Process Laboratory, Hanyang University) ;
  • Park, Jea-Gun (Nano-SOI Process Laboratory, Hanyang University)
  • Published : 2008.03.30
Download PDF
⟨ Previous Next ⟩

Abstract

We developed small molecular organic nonvolatile $4F^2$ memory cells using metal layer evaporation followed by $O_2$ plasma oxidation. Our memory cells sandwich an upper ${\alpha}$-NPD layer, Al nanocrystals surrounded by $Al_2O_3$, and a bottom ${\alpha}$-NPD layer between top and bottom electrodes. Their nonvolatile memory characteristics are excellent: the $V_{th},\;V_p$ (program), $V_e$ (erase), memory margin ($I_{on}/I_{off}$), data retention time, and erase and program endurance were 2.6 V, 5.3 V, 8.5 V, ${\approx}1.5{\times}10^2,\;1{\times}10^5s$, and $1{\times}10^3$ cycles, respectively. They also demonstrated symmetrical current versus voltage characteristics and a reversible erase and program process, indicating potential for terabit-level nonvolatile memory.

Keywords

References

  1. L. P. Ma, J. Liu, and Y. Yang, Appl. Phys. Lett. 80 (2002) 2997 https://doi.org/10.1063/1.1473234
  2. L. Ma, S. Pyo, J. Ouyang, Q. Xu, and Y. Yang, Appl. Phys. Lett. 82 (2003) 1419 https://doi.org/10.1063/1.1556555
  3. L. D. Bozano, B. W. Kean, M. Beinhoff, K. R. Carter, P. M. Rice, and J. C. Scott, Adv. Funct. Mater. 15 (2005) 1933 https://doi.org/10.1002/adfm.200500130
  4. J. He, L. Ma, J. Wu, and Y. Yang, J. Appl. Phys. 97 (2005) 064507 https://doi.org/10.1063/1.1866496
  5. S. Pyo, L. Ma, J. He, Q. Xu, and Y. Yang, J. Appl. Phys. 98 (2005) 54303 https://doi.org/10.1063/1.2033142
  6. L. D. Bozano, B. W. Kean, V. R. Deline, J. R. Salem, and J. C. Scott, Appl. Phys. Lett. 84 (2004) 607 https://doi.org/10.1063/1.1643547
  7. S. H. Kang, T. Crisp, I. Kymissis, and V. Buloviae, Appl. Phys. Lett. 85 (2004) 4666 https://doi.org/10.1063/1.1819991
  8. J. Chen and D. Ma, Appl. Phys. Lett. 87 (2005) 023505 https://doi.org/10.1063/1.1992653
  9. J. G. Park, G. S Lee K. S. Chae, Y. J. Kim, and T. Miyata, J. Korean Phys. Soc. 48 (2006) 1
  10. J. Ouyang, C. Chu, C. Szmanda, L. Ma, and Y. Yang, Nat. Mater. 3 (2004) 918 https://doi.org/10.1038/nmat1269
  11. C. W. Chu, J. Ouyang, J. H. Tseng, and Y. Yang, Adv. Mater. 17 (2005) 1440 https://doi.org/10.1002/adma.200500225
  12. R. J. Tseng, C. Tsai, L. Ma, J. Ouyang, C. S. Ozkan, and Y. Yang, Nat. Nanotechnol. 1 (2006) 72 https://doi.org/10.1038/nnano.2006.55
  13. B. O. Cho, T. Yasue, H. Yoon, M. S. Lee, I. ?S. Yeo, U. I. Chung, J. T. Moon, and B. I. Ryu, Electron Devices Meeting.2006 IEDM (2006)
  14. A. Beck, J. G. Bednorz, Ch. Gerber, C. Rossel, and D. Widmer, Appl. Phys. Lett. 77 (2000) 139 https://doi.org/10.1063/1.126902
  15. Krzysztof Szot, Wolfgang Speier, Gustav Bihlmayer, and Rainer Waser, Nature Material 5 (2006) 312-320 https://doi.org/10.1038/nmat1614
  16. Chia-Hsun Tu, Yi-Sheng Lai, and Dim-Lee Kwong, Appl. Phys. Lett. 89 (2006) 062105 https://doi.org/10.1063/1.2335818
  17. Qidan Ling, Yan Song, Shi J. Ding, Chunxiang Zhu, Daniel S. H. Chan, Dim-Lee Kwong, En-Tang Kang, and Koon-Gee Neoh, Adv. Mater. 17 (2005)

Cited by

  1. Effect of interface-dependent crystalline boundary on sub-threshold characteristics in a solution-processed 6,13-bis(triisopropylsilylethynyl)-pentacene thin-film transistor vol.65, pp.3, 2014, https://doi.org/10.1051/epjap/2014130417