• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.8
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• pp.56-62
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• 1992

This paper is analyzed the charge trapping and electrical properties of 0(Oxide), NO(Nitrided oxide) and ONO(Reoxidized nitrided oxide) as dielectric films in MIS structures. We have processed bottom oxide and top oxide by the thermal method, and nitride(Si$_{3}N_{4}$) by the LPCVD(Low Pressure Chemical Vapor Deposition) method on P-type(100) Silicon wafer. We have studied the charge trapping properties of the dielectrics by using a computer controlled DLTS system. All of the dielectric films are shown peak nearly at 300K. Those are bulk traps. Many trap densities which is detected in NO films, but traps. Many trap densities which is detected in NO films. Varing the nitride thickness, the trap densities of thinner nitride is decreased than the thicker nitride. Finally we have found that trap densities of ONO films is affected by nitride thickness.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.687-690
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• 2003

Experimental results are presented for gate oxide degradation and its effect on device parameters under negative and positive bias stress conditions using NMOSFET's with 3 nm gate oxide. The degradation mechanisms are highly dependent on stress conditions. For negative gate voltage, both hole- and electron-trapping are found to dominate the reliability of gate oxide. However, with changing gate voltage polarity, the degradation becomes dominated by electron trapping. Statistical parameter variations as well as the "OFF" leakage current depend on those charge trapping. Our results therefore show that Si or O bond breakage by electron can be another origin of the investigated gate oxide degradation.gradation.

• Korean Journal of Optics and Photonics
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• v.7 no.1
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• pp.24-27
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• 1996

We describe the optical trapping of yeast particles of $3~4\mu\textrm{m}$ in water solution using a diode laser operating at 790 nm. The yeast particles are trapped by a laser focus and are moved in 2- or 3-dimensions. This confirms the concept of negative light pressure by the gradient force due to the difference of the index of refractions of solutions and particles. By moving yeast particle vertically to the laser beam axis, we measured the horizontal component of the trapping force and compared it with the laser power.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.144-150
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• 1995

Ceramic filter using energy trapping effect is used bandpass filter at high frequency. In this paper, the resonant points of the symmetrical modes and antisymmetrical modes were theoretically analyed and synthesized these modes in order to know the filter characteristics. We simulated them using the computer and also fabricated the ceramic filter using PZT-4 piezoelectric plate made by Valpey Fisher Co., The 1.5[.mu.m] - thick platinum electrode were deposited on the ceramic plates with the various masks. The characteristics of the fabricated filters were measured using the spectrum analyzer. Experimental data were compared with the theoretical results. The maximum-pass frequencies coinsided exactly. The bandwidths of the fabricated filters were slightly different between theoretical and experimental results. We found that these phenomenon were caused by the stray capacitance between the two neighbor electrodes..

• Preventive Nutrition and Food Science
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• v.4 no.2
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• pp.92-96
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• 1999

The effects of aqueous extracts from Korean commercial teas on excessive free radicals were examined utilizing spin trapping, 1, 1-diphenyl-2-picrylhydrazyl (DPPH) radical and lipid peroxidation. A potent scavenging effect of green tea and oriental senna tea was dound using sipin trapping. The most effective teasagainst the DPPH radical was green tea, followed inorder by pine leak tea, Chinese gutta percha tea and orietnal senna tea. Similar to the effects of DPPH radical , green tea, pine leaf tea, Chinese gutta percha tea and oriential senna tea had an inhibitory effect on lipid peroxidation. These findings predict that Korean tea is a promising material for scavenging free radicals, and for curing diseases related to free-radical reactions.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.575-578
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• 2002

In this paper, we discuss carrier trapping model and trap characteristics of nitrided oxide thin film. Based on the experimental results, the carrier trapping model for system having multi-traps is proposed and is fitted with experimental data in order to determine trap parameter of nitride oxide and O2 annealed nitrided oxide. As a results of curve fitting, the heavy nitridation of oxide introduces three kinds of traps with capture cross section $\sigma$n1=1.48$\times$10$^{-17}$ $\textrm{cm}^2$, $\sigma$n2=1.51$\times$10$^{-19}$ $\textrm{cm}^2$, $\sigma$p=1.53$\times$10$^{-18}$ $\textrm{cm}^2$ and corresponding trap densities Nnl=2.66$\times$10$^{12}$ Cm$^{-2}$ , Nn2=1.32$\times$10$^{12}$ Cm$^{-2}$ , Np=8.35$\times$10$^{12}$ Cm$^{-2}$ .

• Bulletin of the Korean Chemical Society
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• v.25 no.12
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• pp.1907-1910
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• 2004

Generation of hydroxyl radical, one of their major active species in ozonation of water was directly observed with spin-trapping/electron spin resonance (ESR) technique using 5,5-dimethyl-pyrrolidine-1-oxyl (DMPO) as a spin-trapping reagent. Hydroxyl radical was trapped with DMPO as a stable radical, DMPO-OH. 80 mM of ozone produced $1.08{\times}10^{-6}$M of DMPO-OH, indicating that 1.4% of ${\cdot}$OH is trapped with DMPO if ${\cdot}$OH is produced stoichiometrically from ozone. Humic acid suppressed DMPO-OH generation in a dose-dependent manner. Generation rate of DMPO-OH was determined with ESR/stopped-flow measurement. Phenol derivatives increased the amount and generation rate of DMPO-OH, indicating that phenol derivatives enhance·OH generation during ozonation of water.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.2
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• pp.79-99
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• 2010

Pulsed current-voltage (I-V) methods are introduced to evaluate the impact of fast transient charge trapping on the performance of high-k dielectric transistors. Several pulsed I-V measurement configurations and measurement requirements are critically reviewed. Properly configured pulsed I-V measurements are shown to be capable of extracting such device characteristics as trap-free mobility, trap-induced threshold voltage shift (${\Delta}V_t$), as well as effective fast transient trap density. The results demonstrate that the pulsed I-V measurements are an essential technique for evaluating high-$\kappa$ gate dielectric devices.

• Journal of the Chungcheong Mathematical Society
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• v.33 no.1
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• pp.157-163
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• 2020

Conley introduced attracting sets and repelling sets for a flow on a topological space and showed that if f is a flow on a compact metric space, then 𝓡(f) = ⋂{A_U ∪ A*_U |U is a trapping region for f}. In this paper we introduce chain recurrent set, trapping region, attracting set and repelling set for a flow f on a TVS-cone metric space and prove that if f is a flow on a compact TVS-cone metric space, then 𝓡(f) = ⋂{A_U ∪ A*_U |U is a trapping region for f}.

• Advances in nano research
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• v.13 no.1
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• pp.77-86
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• 2022

This paper studied the peristaltic transport of upper convected Maxwell nanofluid through a porous medium in a heated (isothermal) symmetric vertical channel. The nanofluid is assumed to be electrically conducting in the presence of a uniform magnetic field. These phenomena are modeled mathematically by a differential equations system by taking low Reynolds number and long-wavelength approximation, the yield differential equations have solved analytically. A suggested new technique to display and discuss the trapping phenomenon is presented. We discussed and analyzed the pumping characteristics, heat function, flow velocity and trapping phenomena which were illustrated graphically through a set of figures for various values of parameters of the problem. The numerical results show that, there are remarkable effects on the vertical velocity, pressure gradient and trapping phenomena with the thermal change of the walls.