Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 29A Issue 8
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- Pages.56-62
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- 1992
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- 1016-135X(pISSN)
The Charge Trapping Properties of ONO Dielectric Films
재산화된 질화산화막의 전하포획 특성
Abstract
This paper is analyzed the charge trapping and electrical properties of 0(Oxide), NO(Nitrided oxide) and ONO(Reoxidized nitrided oxide) as dielectric films in MIS structures. We have processed bottom oxide and top oxide by the thermal method, and nitride(Si
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