• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.11
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• pp.37-44
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• 2003

A distortion suppression technology for employing multiple inputs in 3n＋1 type current mode Max circuit is proposed using the adjustment of transconductance. If the number of input blocks of the current mode Max circuit increases, the high frequency distortion in the output signal grows. In this paper, it has been disclosed that the distortion in the multiple input Max circuit is proportional to such accumulated parasitic capacitance, to the derivative of the output signal and also to tile inverse of transconductance of the common diode-connected transistor. The proposed idea is by employing as larger transconductance of the common diode-connected transistor as possible. The effectiveness of the proposed idea has been proved through the HSPICE simulation for the current mode Max circuits with various numbers of input signals.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.546-550
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• 2013

We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over $10^4$ at low operation voltage of 0.5 V in a single peak and valley current.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.2
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• pp.306-316
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• 2016

In this paper, an NMOS-diode eFuse OTP (One-Time Programmable) memory cell is proposed using a parasitic junction diode formed between a PW (P-Well), a body of an isolated NMOS (N-channel MOSFET) transistor with the small channel width, and an n+ diffusion, a source node, in a DNW (Deep N-Well) instead of an NMOS transistor with the big channel width as a program select device. Blowing of the proposed cell is done through the parasitic junction formed in the NMOS transistor in the program mode. Sensing failures of '0' data are removed because of removed contact voltage drop of a diode since a NMOS transistor is used instead of the junction diode in the read mode. In addition, a problem of being blown for a non-blown eFuse from a read current through the corresponding eFuse OTP cell is solved by limiting the read current to less than $100{\mu}A$ since a voltage is transferred to BL by using an NMOS transistor with the small channel width in the read mode.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.401-410
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• 2017

In this work, we show that the excessive lattice heating problem due to parasitic pnp transistor action in the diode electrostatic discharge (ESD) protection device in the diode input protection circuit, which is favorably used in CMOS RF ICs, can be solved by adopting a symmetrical cathode structure. To explain how the recipe works, we construct an equivalent circuit for input human-body model (HBM) test environment of a CMOS chip equipped with the diode protection circuit, and execute mixed-mode transient simulations utilizing a 2-dimensional device simulator. We attempt an in-depth comparison study by varying device structures to suggest valuable design guidelines in designing the protection diodes connected to the $V_{DD}$ and $V_{SS}$ buses. Even though this work is based on mixed-mode simulations utilizing device and circuit simulators, the analysis given in this work clearly explain the mechanism involved, which cannot be done by measurements.

• Journal of Power Electronics
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• v.17 no.2
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• pp.561-569
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• 2017

Power converter design requires simulation accuracy. In addition to the requirement of accurate models of power semiconductor devices, this paper highlights the role of considering a very good description of the converter circuit layout for an accurate simulation of its electrical behavior. This paper considers a simple experimental circuit including one switching cell where a MOSFET transistor controls the diode under test. The turn-off transients of the diode are captured, over which the circuit wiring has a major influence. This paper investigates the necessity for accurate modeling of the experimental test circuit wiring and the MOSFET transistor. It shows that a simple wiring inductance as the circuit wiring representation is insufficient. An adequate model and identification of the model parameters are then discussed. Results are validated through experimental and simulation results.

• Journal of Advanced Marine Engineering and Technology
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• v.33 no.5
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• pp.756-761
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• 2009

In this paper, a X band voltage controlled oscillator is proposed. The oscillator uses a transistor as an oscillating element and its oscillating frequencies are controlled by the tuning voltage of varactor diode. Using the circuit simulation tools, the matching circuits between the transistor and varactor diode, its input and output matching circuits, and a feedback circuits are designed. The measured results of the fabricated oscillator show that its oscillation frequencies are from 10.50GHz to 10.88GHz according to the turning voltages of 1V to 18V, its output power levels are about 4.3dBm, and its phase noise is around -43.5dBc/Hz at 100kHz offset frequency of 10.5GHz.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.161-165
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• 2023

This paper designed a voltage feedback driving circuit to compensate for the characteristic deviation of the Active Matrix Organic Light Emitting Diode driving Thin Film Transistor. This paper describes a stable and fast circuit by applying charge sharing and polar stabilization methods. A 12-inch Organic Light Emitting Diode with a Double Wide Ultra eXtended Graphics Array resolution creates a screen distortion problem for line parasitism, and charge sharing and polar stabilization structures were applied to solve the problem. By applying Charge Sharing, all data lines are shorted at the same time and quickly positioned as the average voltage to advance the compensated change time of the gate voltage in the next operation period. A buffer circuit and a current pass circuit were added to lower the Amplifier resistance connected to the line as a polar stabilization method. The advantage of suppressing the Ringing of the driving Thin Film Transistor can be obtained by increasing the stability. As a result, a circuit was designed to supply a stable current to the Organic Light Emitting Diode even if the characteristic deviation of the driving Thin Film Transistor occurs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.312-315
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• 2001

Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT. polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.312-315
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• 2001

Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT, Polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.215-220
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• 2016

Monolithically integrated devices are strongly desired in next generation power ICs to reduce the chip size and improve the efficiency and frequency response. Three examples of the embedment of different functional diode(s) into AlGaN/GaN heterojunction field-effect transistors are presented, which can minimize the parasitic effects caused by interconnection between devices.