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http://dx.doi.org/10.5573/JSTS.2013.13.6.546

Negative Differential Resistance Devices with Ultra-High Peak-to-Valley Current Ratio and Its Multiple Switching Characteristics  

Shin, Sunhae (School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology)
Kang, In Man (School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology)
Kim, Kyung Rok (School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.13, no.6, 2013 , pp. 546-550 More about this Journal
Abstract
We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over $10^4$ at low operation voltage of 0.5 V in a single peak and valley current.
Keywords
Negative differential resistance; peak-to-valley current ratio; band-to-band tunneling; multiple switching;
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