[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.5573/JSTS.2016.16.2.215

Diode Embedded AlGaN/GaN Heterojuction Field-Effect Transistor

Park, Sung-Hoon (School of Electrical and Electronic Engineering, Hongik University)
Lee, Jae-Gil (School of Electrical and Electronic Engineering, Hongik University)
Cho, Chun-Hyung (Department of Electronic & Electrical Engineering, College of Science and Technology, Hongik University)
Choi, Yearn-Ik (Department of Electrical and Computer Engineering, Ajou University)
Kim, Hyungtak (School of Electrical and Electronic Engineering, Hongik University)
Cha, Ho-Young (School of Electrical and Electronic Engineering, Hongik University)

Publication Information

JSTS:Journal of Semiconductor Technology and Science / v.16, no.2, 2016 , pp. 215-220 More about this Journal

Abstract

Monolithically integrated devices are strongly desired in next generation power ICs to reduce the chip size and improve the efficiency and frequency response. Three examples of the embedment of different functional diode(s) into AlGaN/GaN heterojunction field-effect transistors are presented, which can minimize the parasitic effects caused by interconnection between devices.

Keywords

AlGaN/GaN; embedment; heterojunction field-effect transistor; monolithic integration; Schottky barrier diode;

Citations & Related Records

Times Cited By KSCI : 1 (Citation Analysis)

Reference
Cited By KSCI

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