• Journal of Astronomy and Space Sciences
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• v.18 no.2
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• pp.153-162
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• 2001

In this paper, space radiation environment and total ionizing dose(TID) effect have been analyzed for the KOMPSAT-2 operational orbit. It has been revealed that the trapped protons are concentrated in the SAA(South Atlantic Anomaly) area and that the trapped protons and electrons, and solar protons are main factors affecting TID. It turned out that low energy Particles can be effectively blocked by aluminum shielding thickness, but high energy Particles can not be effectively blocked by increasing aluminum shielding thickness. KOMPSAT-2 total radiation dose which is accumulated continuously to spacecraft electronics has been expressed as the function of aluminum thickness. These values ran be used as the criteria for the selection of electronic parts and shielding thinkness of the KOMPSAT-2 structure or electronic box.

• Journal of Institute of Control, Robotics and Systems
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• v.17 no.11
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• pp.1125-1131
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• 2011

This paper presents a control theoretic approach to realizing fault tolerance in asynchronous sequential circuits. The considered asynchronous circuit is assumed to work in space environment and is subject to faults caused by total ionizing dose (TID) effects. In our setting, TID effects cause permanent changes in state transition characteristics of the asynchronous circuit. Under a certain condition of reachability redundancy, it is possible to design a corrective controller so that the closed-loop system can maintain the normal behavior despite occurrences of TID faults. As a case study, the proposed control scheme is applied to an asynchronous arbiter implemented in FPGA.

• Journal of Electrical Engineering and Technology
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• v.12 no.4
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• pp.1619-1626
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• 2017

Electronic components that are used in high-level radiation environment require a semiconductor device having a radiation-hardened characteristic. In this paper, we proposed a radiation-hardened I-gate n-MOSFET (n-type Metal Oxide Semiconductors Field Effect Transistors) using a layout modification technique only. The proposed I-gate n-MOSFET structure is modified as an I-shaped gate poly in order to mitigate a radiation-induced leakage current in the standard n-MOSFET structure. For verification of its radiation-hardened characteristic, the M&S (Modeling and Simulation) of the 3D (3-Dimension) structure is performed by TCAD (Technology Computer Aided Design) tool. In addition, we carried out an evaluation test using a $Co^{60}$ gamma-ray source of 10kGy(Si)/h. As a result, we have confirmed the radiation-hardened level up to a total ionizing dose of 20kGy(Si).

• Journal of IKEEE
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• v.27 no.3
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• pp.303-307
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• 2023

In this paper, the creation of an Electron-Hole Pair due to Total Ionizing Dose (TID) effects inside the oxide of a Buried Channel Array Transistor (BCAT) device is induced, resulting in an increase in leakage current and threshold due to an increase in hole trap charge at the oxide interface. By comparing and simulating changes in voltage with the previously proposed Partial Isolation Buried Channel Array Transistor (Pi-BCAT) structure, the characteristics in leakage current and threshold voltage changed regardless of the increased oxide area of the Pi-BCAT device, compared to the asymmetrically doped BCAT structure. It shows superiority.

• Nuclear Engineering and Technology
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• v.36 no.1
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• pp.1-11
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• 2004

Two approximate methods for a cosmic radiation shielding calculation in low earth orbits were developed and assessed. Those are a sectoring method and a chord-length distribution method. In order to simulate a change in cosmic radiation environments along the satellite mission trajectory, IGRF model and AP(E)-8 model were used. When the approximate methods were applied, the geometrical model of satellite structure was approximated as one-dimensional slabs, and a pre-calculated dose-depth conversion function was introduced to simplify the dose calculation process. Verification was performed with mission data of KITSAT-1 and the calculated results were also compared with detailed 3-dimensional calculation results using Monte Carlo calculation. Dose results from the approximate methods were conservatively higher than Monte Carlo results, but were lower than experimental data in total dose rate. Differences between calculation and experimental data seem to come from the AP-8 model, for which it is reported that fluxes of proton are underestimated. We confirmed that the developed approximate method can be applied to commercial satellite shielding calculations. It is also found that commercial products of semi-conductors can be damaged due to total ionizing dose under LEO radiation environment. An intensive shielding analysis should be taken into account when commercial devices are used.

• Nuclear Engineering and Technology
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• v.54 no.6
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• pp.2198-2203
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• 2022

As robotics become more sophisticated, there are a growing number of generic systems being used for routine tasks in nuclear environments to reduce risk to radiation workers. The nuclear sector has called for more commercial-off-the-shelf (COTS) devices and components to be used in preference to nuclear specific hardware, enabling robotic operations to become more affordable, reliable, and abundant. To ensure reliable operation in nuclear environments, particularly in high-gamma facilities, it is important to quantify the tolerance of electronic systems to ionizing radiation. To deliver their full potential to end-users, mobile robots require sophisticated autonomous behaviors and sensing, which requires significant computational power. A popular choice of computing system, used in low-cost mobile robots for nuclear environments, is the UP Core single board computer. This work presents estimates of the total ionizing dose that the UP Core running the Robot Operating System (ROS) can withstand, through gamma irradiation testing using a Co-60 source. The units were found to fail on average after 111.1 ± 5.5 Gy, due to faults in the on-board power management circuitry. Its small size and reasonable radiation tolerance make it a suitable candidate for robots in nuclear environments, with scope to use shielding to enhance operational lifetime.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.6
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• pp.85-90
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• 2013

In this paper, 6bit SAR ADC tolerant to ionizing radiation is presented. Radiation tolerance is achieved by using the Dummy Gate Assisted (DGA) MOSFET which was proposed to suppress the leakage current induced by ionizing radiation and its comparing sample is designed with the conventional MOSFET. The designed ADC consists of binary capacitor DAC, dynamic latch comparator, and digital logic and was fabricated using a standard 0.35um CMOS process. Irradiation was performed by Co-60 gamma ray. After the irradiation, ADC designed with the conventional MOSFET did not operate properly. On the contrary, ADC designed with the DGA MOSFET showed a little parametric degradation of which DNL was increased from 0.7LSB to 2.0LSB and INL was increased from 1.8LSB to 3.2LSB. In spite of its parametric degradation, analog to digital conversion in the ADC with DGA MOSFET was found to be possible.

• International Journal of Aeronautical and Space Sciences
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• v.3 no.2
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• pp.40-45
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• 2002

A radiation analysis is performed for the Ka and Ku-band transponder of the Communications and Broadcasting Satellite (CBS) that is planned for launch into the geo-synchronous orbit. A particular attention is given to calculation of Total Ionizing Dose (TID) for the mission life time of 15 + 3 years. A numerical modeling of the charged particles at the geo-synchronous orbit is undertaken. The charged particles from the modeling are then transported through the mechanical structure and component housings of the transponder. A set of locations are selected for the detailed calculation of TID. The results from the present calculation show that three-dimensional modeling of the component housings as well as the mechanical structure of the spacecraft is requisite in order to acquire a reliable calculation of TID.

• Journal of Astronomy and Space Sciences
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• v.33 no.3
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• pp.229-236
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• 2016

We present proton-induced single event effects (SEEs) and γ-ray-induced total ionizing dose (TID) data for 1 Gbit lowpower double data rate synchronous dynamic random access memory (LPDDR SDRAM) fabricated on a 5 μm epitaxial layer (54 nm complementary metal-oxide-semiconductor (CMOS) technology). We compare our radiation tolerance data for LPDDR SDRAM with those of general DDR SDRAM. The data confirms that our devices under test (DUTs) are potential candidates for space flight applications.

• Journal of Semiconductor Engineering
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• v.1 no.3
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• pp.81-87
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• 2020

An instrumentation amplifier (IA) and an analog-to-digital converter (ADC) are essential circuit blocks for accurate and robust sensor readout systems. This paper introduces recent advances in radiation-hardening by design (RHBD) techniques applied for the sensor readout integrated circuits (IC), e.g., the three-op-amp IA and the successive-approximation register (SAR) ADC, operating against total ionizing dose (TID) and singe event effect (SEE) in harsh radiation environments. The radiation-hardened IA utilized TID monitoring and adaptive reference control to compensate for transistor parameter variations due to radiation effects. The radiation-hardened SAR ADC adopts delay-based double-feedback flip-flops to prevent soft errors which flips the data bits. Radiation-hardened IA and ADC were verified through compact model simulation, and fabricated CMOS chips were measured in radiation facilities to confirm their radiation tolerance.