• Title/Summary/Keyword: time-domain comparator

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A 1-V 1.6-GS/s 5.58-ENOB CMOS Flash ADC using Time-Domain Comparator

  • Lee, Han-Yeol;Jeong, Dong-Gil;Hwang, Yu-Jeong;Lee, Hyun-Bae;Jang, Young-Chan
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.6
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    • pp.695-702
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    • 2015
  • A 1-V 1.6-GS/s 5.58-ENOB flash ADC with a high-speed time-domain comparator is proposed. The proposed time-domain comparator, which consumes low power, improves the comparison capability in high-speed operations and results in the removal of preamplifiers from the first-stage of the flash ADC. The time interpolation with two factors, implemented using the proposed time-domain comparator array and SR latch array, reduces the area and power consumption. The proposed flash ADC has been implemented using a 65-nm 1-poly 8-metal CMOS process with a 1-V supply voltage. The measured DNL and INL are 0.28 and 0.41 LSB, respectively. The SNDR is measured to be 35.37 dB at the Nyquist frequency. The FoM and chip area of the flash ADC are 0.38 pJ/c-s and $620{\times}340{\mu}m^2$, respectively.

Design of ZQ Calibration Circuit using Time domain Comparator (시간영역 비교기를 이용한 ZQ 보정회로 설계)

  • Lee, Sang-Hun;Lee, Won-Young
    • The Journal of the Korea institute of electronic communication sciences
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    • v.16 no.3
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    • pp.417-422
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    • 2021
  • In this paper, a ZQ calibration using a time domain comparator is proposed. The proposed comparator is designed based on VCO, and an additional clock generator is used to reduce power consumption. By using the proposed comparator, the reference voltage and the PAD voltage were compared with a low 1 LSB voltage, so that the additional offset cancelation process could be omitted. The proposed time domain comparator-based ZQ calibration circuit was designed with a 65nm CMOS process with 1.05V and 0.5V supply voltages. The proposed clock generator reduces power consumption by 37% compared to a single time domain comparator, and the proposed ZQ calibration increases the mask margin by up to 67.4%.

A Time-Domain Comparator for Micro-Powered Successive Approximation ADC (마이크로 전력의 축차근사형 아날로그-디지털 변환기를 위한 시간 도메인 비교기)

  • Eo, Ji-Hun;Kim, Sang-Hun;Jang, Young-Chan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.16 no.6
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    • pp.1250-1259
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    • 2012
  • In this paper, a time-domain comparator is proposed for a successive approximation (SA) analog-to-digital converter (ADC) with a low power and high resolution. The proposed time-domain comparator consists of a voltage-controlled delay converter with a clock feed-through compensation circuit, a time amplifier, and binary phase detector. It has a small input capacitance and compensates the clock feed-through noise. To analyze the performance of the proposed time-domain comparator, two 1V 10-bit 200-kS/s SA ADCs with a different time-domain comparator are implemented by using 0.18-${\mu}m$ 1-poly 6-metal CMOS process. The measured SNDR of the implemented SA ADC is 56.27 dB for the analog input signal of 11.1 kHz, and the clock feed-through compensation circuit and time amplifier of the proposed time-domain comparator enhance the SNDR of about 6 dB. The power consumption and area of the implemented SA ADC are 10.39 ${\mu}W$ and 0.126 mm2, respectively.

A 1V 200-kS/s 10-bit Successive Approximation ADC

  • Uh, Ji-Hun;Kim, Sang-Hun;Jang, Young-Chan
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2010.05a
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    • pp.483-485
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    • 2010
  • A 200kS/s 10-bit successive approximation(SA) ADC with a rail-to-rail input range is proposed. The proposed SA ADC consists of DAC, comparator, and successive approximation register(SAR) logic. The folded-type capacitor DAC with the boosted NMOS switches is used to reduce the power consumption and chip area. Also, the time-domain comparator which uses a fully differential voltage-to-time converter improves the PSRR and CMRR. The SAR logic uses the flip-flop with a half valid window, it results in the reduction of the power consumption and chip area. The proposed SA ADC is designed by using a $0.18{\mu}m$ CMOS process with 1V supply.

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A 10-bit 10-MS/s 0.18-um CMOS Asynchronous SAR ADC with Time-domain Comparator (시간-도메인 비교기를 이용하는 10-bit 10-MS/s 0.18-um CMOS 비동기 축차근사형 아날로그-디지털 변환기)

  • Jeong, Yeon-Hom;Jang, Young-Chan
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.05a
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    • pp.88-90
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    • 2012
  • This paper describes a 10-bit 10-MS/s asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) with a rail-to-rail input range. The proposed SAR ADC consists of a capacitor digital-analog converter (DAC), a SAR logic and a comparator. To reduce the frequency of an external clock, the internal clock which is asynchronously generated by the SAR logic and the comparator is used. The time-domain comparator with a offset calibration technique is used to achieve a high resolution. To reduce the power consumption and area, a split capacitor-based differential DAC is used. The designed asynchronous SAR ADC is fabricated by using a 0.18 um CMOS process, and the active area is $420{\times}140{\mu}m^2$. It consumes the power of 0.818 mW with a 1.8 V supply and the FoM is 91.8 fJ/conversion-step.

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A 10-bit 10-MS/s 0.18-㎛ CMOS Asynchronous SAR ADC with split-capacitor based differential DAC (분할-커패시터 기반의 차동 디지털-아날로그 변환기를 가진 10-bit 10-MS/s 0.18-㎛ CMOS 비동기 축차근사형 아날로그-디지털 변환기)

  • Jeong, Yeon-Ho;Jang, Young-Chan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.17 no.2
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    • pp.414-422
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    • 2013
  • This paper describes a 10-bit 10-MS/s asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) using a split-capacitor-based differential digital-to-analog converter (DAC). SAR logic and comparator are asynchronously operated to increase the sampling frequency. The time-domain comparator with an offset calibration technique is used to achieve a high resolution. The proposed 10-bit 10-MS/s asynchronous SAR ADC with the area of $140{\times}420{\mu}m^2$ is fabricated using a 0.18-${\mu}m$ CMOS process. Its power consumption is 1.19 mW at 1.8 V supply. The measured SNDR is 49.95 dB for the analog input frequency of 101 kHz. The DNL and INL are +0.57/-0.67 and +1.73/-1.58, respectively.

Time-Domain Read-Out Circuit for Inductive Sensor Applications (인덕티브 센서 응용을 위한 시간 영역 리드아웃 회로)

  • Jong-Yeob Oh;Sung-Hun Jo
    • The Journal of the Korea institute of electronic communication sciences
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    • v.18 no.4
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    • pp.625-640
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    • 2023
  • This paper propose a circuit that can measure the inductance of an inductive sensor used in IOT applications. The circuit was constructed using the characteristics of an RL low-pass filter circuit, comparator, current control switch, and capacitor, and the inductance value within the range 1[nH] < L ≤ 1[H] can be derived through the duration time during the output voltage of the RL low-pass filter circuit is greater than the reference voltage.

A 4x Time-Domain Interpolation 6-bit 3.4 GS/s 12.6 mW Flash ADC in 65 nm CMOS

  • Liu, Jianwei;Chan, Chi-Hang;Sin, Sai-Weng;U, Seng-Pan;Martins, Rui Paulo
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.4
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    • pp.395-404
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    • 2016
  • A 6-bit 3.4 GS/s flash ADC in a 65 nm CMOS process is reported along with the proposed 4x time-domain interpolation technique which allows the reduction of the number of comparators from the conventional $2^N-1$ to $2^{N-2}$ in a N-bit flash ADC. The proposed scheme effectively achieves a 4x interpolation factor with simple SR-latches without extra clocking and calibration hardware overhead in the interpolated stage where only offset between the $2^{N-2}$ comparators needs to be calibrated. The offset in SR-latches is within ${\pm}0.5$ LSB in the reported ADC under a wide range of process, voltage supply, and temperature (PVT). The design considerations of the proposed technique are detailed in this paper. The prototype achieves 3.4 GS/s with 5.4-bit ENOB at Nyquist and consumes 12.6 mW power at 1 V supply, yielding a Walden FoM of 89 fJ/conversion-step.

A Study on the Implementation of the High Speed Timer for SAW Device (SAW용 고속 타이머 구현에 대한 연구)

  • Kim, Ok-Soo;Kim, Young-kil
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.13 no.5
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    • pp.1030-1037
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    • 2009
  • SAW Sensor is greatly developed today and Reader Platform which uses SAW Sensor for temperature or pressure is required to use TDS method for low power and high speed processing. For to use this Platform, high speed timer is required to measure a short interval between reference signal and reflectior's signal. This paper proposes that platform receive SAW Sensor's signals and transform digital signal through comparator. Next the transformed signal is measured by Timer Platform and the measured interval is displayed with time. This paper proposes method of measurment of time with nano sec unit.

Low Power 31.6 pJ/step Successive Approximation Direct Capacitance-to-Digital Converter (저전력 31.6 pJ/step 축차 근사형 용량-디지털 직접 변환 IC)

  • Ko, Youngwoon;Kim, Hyungsup;Moon, Youngjin;Lee, Byuncheol;Ko, Hyoungho
    • Journal of Sensor Science and Technology
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    • v.27 no.2
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    • pp.93-98
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    • 2018
  • In this paper, an energy-efficient 11.49-bit successive approximation register (SAR) capacitance-to-digital converter (CDC) for capacitive sensors with a figure of merit (FoM) of 31.6 pJ/conversion-step is presented. The CDC employs a SAR algorithm to obtain low power consumption and a simplified structure. The proposed circuit uses a capacitive sensing amplifier (CSA) and a dynamic latch comparator to achieve parasitic capacitance-insensitive operation. The CSA adopts a correlated double sampling (CDS) technique to reduce flicker (1/f) noise to achieve low-noise characteristics. The SAR algorithm is implemented in dual operating mode, using an 8-bit coarse programmable capacitor array in the capacitance-domain and an 8-bit R-2R digital-to-analog converter (DAC) in the charge-domain. The proposed CDC achieves a wide input capacitance range of 29.4 pF and a high resolution of 0.449 fF. The CDC is fabricated in a $0.18-{\mu}m$ 1P6M complementary metal-oxide-semiconductor (CMOS) process with an active area of 0.55 mm2. The total power consumption of the CDC is $86.4{\mu}W$ with a 1.8-V supply. The SAR CDC achieves a measured 11.49-bit resolution within a conversion time of 1.025 ms and an energy-efficiency FoM of 31.6 pJ/step.