• Proceedings of the KIEE Conference
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• 2001.05a
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• pp.194-196
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• 2001

Light dimming is based on adjusting the voltage which gets to the lamp. Light dimming has been possible for many decades by using adjustable power resistors and adjustable transformers. The power electronics have proceeded quietly since 1960. Between 1960-1970 thyristors and triacs came to market. Using those components it was quite easy to make small and inexpensive light dimmers which have goof efficiency. This type of electronic light dimmers became available after 1970 and are nowadays used in very many locations like homes, restaurants, conference rooms and in stage lighting. But the problem of thyristor dimmer have been that it has poor efficiency and voltage drop. Recently IGBT(Insulated Gate Bipolar Transistor) control is a new way to do light dimming for improving this problems. IGBT dimmer has many other advantages over traditional thyristor dimmer there are no huge current spikes and EMI caused by turn on Using IGBT it is possible to make the turn-off rate relatively slot to achieve quite operations in terms of EMI and acoustical or incandescent lamp filament noise. For the development of IGBT dimmer. This paper shows the effects of IGBT dimmer compared with thyristor dimmer through a simulation using EMTDC.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.1
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• pp.17-23
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• 2005

The switching characteristics of MOS-Controlled Thyristor(MCT) is studied with variation of the channel length and impurity concentration in ON and OFF FET channel. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator and PSPICE simulator are used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of channel length and impurity concentration in P and N channel. The channel length and N impurity concentration of the proposed MCT power device show the strong affect on the transient characteristics of current and power. The N channel length affects only on the OFF characteristics of power and anode current, while the N doping concentration in P channel affects on the ON and OFF characteristics.

• The Transactions of the Korean Institute of Power Electronics
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• v.21 no.6
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• pp.473-480
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• 2016

This study proposes a performance improvement for parallel-connected thyristor dual converters using a circulating current with an unbalanced parallel operation compensator. The proposed control method determines a variable reference value for the voltage PI controller according to voltage error at firing angle control applied to a difference current control. This method uses circulating current control to maintain a stable voltage and excellent current response during parallel operation. The effectiveness of the proposed control is verified with a simulation and an experiment based on the comparison of the performance of the proposed control method with other conventional methods.

• The Transactions of the Korean Institute of Power Electronics
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• v.20 no.4
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• pp.363-368
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• 2015

This paper deals with an improved current source using full-bridge converter type for thyristor valve test of HVDC system. The conventional high-current and low-voltage source of synthetic test circuit requires additional auxiliary power supply to provide the reverse voltage for the auxiliary thyristor valve during turn-off process. The proposed circuit diagram to provide the reverse voltage is extremely simple because no additional component is required. The reverse voltage can be obtained from the input DC voltage of the high-current and low-voltage power supply. The operation principle and design method of the proposed system are described. Simulation and experimental results in scaled down STC of 200 V, 30 A demonstrate the validity of the proposed scheme.

• Proceedings of the KIEE Conference
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• 2000.07b
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• pp.1327-1329
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• 2000

The thyristor among the power-semi-conductor elements, which has large current capacity and high voltage, is used widely nowadays. When the thyristor was being used to the long time, this element may be able to arise the system trip caused by changing the characteristic and dropping the performance. Therefore, it would be necessary to analyze the characteristic of element to maintain the stable operation of the system. In oder to analyze this characteristic, it would be need to test forward direction, reverse direction and leakage current by supplying the half-sine wave voltage. Among these testing, transient current condition is generated from the testing of leakage current. This transient current may be the main factor of the error in the precise measurement of leakage current. Therefore, this paper analyzes the relationship between supply voltage and transient current in measuring leakage current of the SCR, and then suggests the condition and cause of transient current as appearing the leakage current in the testing the leakage current.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.4
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• pp.562-567
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• 1996

A new lateral MOS controlled thyristor, named Shorted Anode LMCT(SA-LMCT), is proposed and analyzed by a two-dimensional device simulation. The device structure employs the implanted n+ layer which shorts the p+ anode together by a common metal electrode and provides a electron conduction path during turn-off period. The turn-off is achieved by not only diverting the hole current through the p+ cathode short but also providing the electron conduction path from the n-base into the n+ anode electrode. In addition, the modified shorted anode LMCT, which has an n+ short junction located inside the p+ anode junction, is also presented. It is shown that the modified SA-LMCT enjoys the advantage of no snap-back behavior in the forward characteristics with little sacrificing of the forward voltage drop. The simulation result shows that the turn-off times of SA-LMCT can be reduced by one-forth and the maximum controllable current density may be increased by 45 times at the expense of 0.34 V forward voltage drop as compared with conventional LMCT. (author). 11 refs., 6 figs., 1 tab.

• The Transactions of the Korean Institute of Power Electronics
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• v.22 no.6
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• pp.484-495
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• 2017

In HVDC thyristor valves, more than 95% of heat loss occurs in snubber resistors and valve reactors. In order to dissipate the heat from the valves and to suppress the electrolytic current, water with a high heat capacity and a low conductivity of less than 0.2 uS/cm must be used as a refrigerant of the heat sink. The cooling parts must also be arranged to reduce the electrolytic current, whereas the pipe that supplies water to the thyristor heat sink must have the same electric potential as the valve. Corrosion is mainly caused by electrochemical reactions and the influence of water quality and leakage current. This paper identifies the refrigerants involved in the ionization, electrical conductivity, and corrosion in HVDC thyristor valves. A method for preventing corrosion is then introduced. The design of the heat sink with an excellent heat radiation is also analyzed in detail.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.59 no.4
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• pp.473-476
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• 2010

In this paper, we analyzed the short circuit current of a low voltage direct current distribution system. For the analysis, we performed the modeling of the low voltage direct current distribution system with a 6-pulse three-phase thyristor rectifier using the PSCAD/EMTDC, surveyed impedance of sources, transformers and distribution lines to run a simulation. A result of the simulation is that short circuit currents of the direct current distribution system with the rectifier decreased due to a thyristor-ON-resistance(Ron). But in case of the low thyristor-ON resistance, output fault current of the rectifier increased over three-phase short circuit current of an AC power system without a rectifier by regular ratio of the rectifier. Because the output fault current of the rectifier can increase over interrupting the capacity of circuit breakers, studying short circuit currents of a low voltage direct current distribution system with a rectifier is necessary for introducing the direct current distribution systems.

• Structural Engineering and Mechanics
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• v.82 no.6
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• pp.735-745
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• 2022

The suspension thyristor valve can generate tremendous vertical acceleration responses in layers and large tension forces in hangers. A shaking table test of a scaled-down model of thyristor valves suspended on a hall building is performed to qualify the risk of vertical uplift of two representative types of valves, the chain valve and the rigid valve. Besides, an analytical model is established to investigate the source of the slackening of hangers. The test results show that the valves frequently experience a large vertical acceleration response. The soft spring joint can significantly reduce acceleration, but is still unable to prevent vertical uplift of the chain valve. The analytical model shows a stiffer roof and inter-story connection both contribute to a higher risk of vertical uplift for a rigid valve. In addition, the planar eccentricity and short hangers, which result in torsional motion of the valve, increase the possibility of vertical uplift for a chain valve. Therefore, spring joints with additional viscous dampers and symmetric layout in each layer are recommended for the rigid and chain valve, respectively, to prevent the uplift of valves.

• Korean Journal of Optics and Photonics
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• v.13 no.2
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• pp.146-150
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• 2002

1.55${\mu}{\textrm}{m}$ PnpN optical thyristor as a smart optical switch has potential applications in advanced optical communication systems. PnpP optical thyristors operating at 1.55${\mu}{\textrm}{m}$ are proposed and fabricated for the first time. In the optical thyristors, we employ InGaAs/InP multiple quantum well (MQW) for the active n- and p-layers. The thyristors show sufficiently nonlinear s-shape I-V characteristics and spontaneous emission. In the OFF-state, the device has a high-impedance up to switching voltage of 4.03(V). On the other hand, it has low-impedance and emits spontaneous light as a light-emitting diode in the ON-state voltage of 1.77(V), and switching voltage is changed under several light input conditions. It can be used as a header processor in optical asynchronous transfer mode (ATM), as a hard limiter in optical code division multiple access (CDMA) and as a wavelength converter in optical WDM systems.