• Korean Journal of Materials Research
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• v.31 no.2
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• pp.97-100
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• 2021

We report the effect of Standard Clean-1 (SC-1) cleaning to remove residual Ti layers after silicidation to prevent Al diffusion into Si wafer for Ti Schottky barrier diodes (Ti-SBD). Regardless of SC-1 cleaning, the presence of oxygen atoms is confirmed by Auger electron spectroscopy (AES) depth profile analysis between Al and Ti-silicide layers. Al atoms at the interface of Ti-silicide and Si wafer are detected, when the SC-1 cleaning is not conducted after rapid thermal annealing. On the other hand, Al atoms are not found at the interface of Ti-SBD after executing SC-1 cleaning. Al diffusion into the interface between Ti-silicide and Si wafer may be caused by thermal stress at the Ti-silicide layer. The difference of the thermal expansion coefficients of Ti and Ti-silicide gives rise to thermal stress at the interface during the Al layer deposition and sintering processes. Although a longer sintering time is conducted for Ti-SBD, the Al atoms do not diffuse into the surface of the Si wafer. Therefore, the removal of the Ti layer by the SC-1 cleaning can prevent Al diffusion for Ti-SBD.

• Corrosion Science and Technology
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• v.15 no.6
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• pp.259-264
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• 2016

With a specially designed electrochemical cell, the changes in impedance behavior for Inconel 600 and aluminide diffusion coatings under molten sulfate film with thermal cycles (from $800^{\circ}C$ to $350^{\circ}C$) were monitored with electrochemical impedance measurements. It was found that corrosion resistance for both materials increased with lower temperatures. At the same time, the state of molten salt was also monitored successfully by measuring the changes in impedance at high frequency, which generally represents the resistance of molten salt itself. After two thermal cycles, both Inconel 600 and aluminide diffusion coatings showed excellent corrosion resistance. The results from SEM observation and EDS analysis correlated well with the results obtained by electrochemical impedance measurements. It is concluded that electrochemical impedance is very useful for monitoring the corrosion resistance of materials under molten salt film conditions even with thermal cycles.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.4
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• pp.321-325
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• 2020

Atmospheric environmental problems have a major impact on human health and lifestyle. In humans, inhalation of nitrogen oxides causes respiratory diseases, such as bronchitis. In this paper, thermal analysis of a gas sensor was carried out to design and fabricate a wearable nylon-yarn gas sensor for the detection of NO_x gas. In the thermal analysis method, the thermal diffusion process was analyzed while operating the sensors at 40 and 60℃ to secure a temperature range that does not cause thermal runaway due to temperature in the operating environment. Thermal diffusion analysis was performed using the COMSOL software. The thermal analysis results could be useful for analyzing gas adsorption and desorption, as well as the design of gas sensors. The thermal energy diffusion rate increased slightly from 10.05 to 10.1 K/mm as the sensor temperature increased from 40 to 60℃. It was concluded that the sensor could be operated in this temperature range without thermal breakdown.

• Journal of Ocean Engineering and Technology
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• v.21 no.6
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• pp.87-94
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• 2007

This study used POM (Princeton ocean model) improved for applying to coastal area in order to predict the distribution of thermal waste water. This model was applied to the coastal circulation and the effect of thermal waste water of Cheonsu-Bay. So this study compared the discharge of thermal waste water with each layer and section. The tidal current was about 1.5 m/sec at surface level and 0.9 m/sec on bottom level at flood tide; tidal current was about 1.3 m/sec on surface level and 0.8 m/sec on bottom level at ebb tide. The method discharging the thermal waste water in the nearshore region (case 1) accelerates the diffusion of the thermal waste water in the north-south direction(longshore direction). However, the method discharge the thermal waster water in the offshore region (case 2) reduced the diffusion of the thermal waste water over the coastal region. According th the diffusion region of the thermal waste water with case 1 and case 2 at three different layers (surface, middle, bottom), the diffusion region by case 1 discharge method generally influenced wider region (twice) than the one by case 2 discharge method with lower temperature between $1^{\circ}C\;and\;2^{\circ}C$, whereas the case 2 discharge method influenced the deeper region (middle and botton layers) with higher change of the water temperature ($1{\sim}3^{\circ}C$).

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.188-188
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Meta Oxide Semiconductor) based electronic devices, the electronic devices, become much faster and smaller size that are promising property of semiconductor market. However, very narrow interconnect line width has some disadvantages. Deposition of conformal and thin barrier is not easy. And metallization process needs deposition of diffusion barrier and glue layer for EP/ELP deposition. Thus, there is not enough space for copper filling process. In order to get over these negative effects, simple process of copper metallization is important. In this study, Cu-V alloy layer was deposited using of DC/RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane SiO2/Si bi-layer substrate with smooth surface. Cu-V film's thickness was about 50 nm. Cu-V alloy film deposited at $150^{\circ}C$. XRD, AFM, Hall measurement system, and AES were used to analyze this work. For the barrier formation, annealing temperature was 300, 400, $500^{\circ}C$ (1 hour). Barrier thermal stability was tested by I-V(leakage current) and XRD analysis after 300, 500, $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However vanadium-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Therefore thermal stability of vanadium-based diffusion barrier is desirable for copper interconnection.

• Journal of the Korean Society of Combustion
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• v.14 no.4
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• pp.33-40
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• 2009

Waste Thermal Pyrolysis Melting process was proposed and has been studied in order to prevent air pollution by dioxin and fly ash generated from combustion process for disposal of waste. In this study, applicability as the fuel of diffusion burner of synthesis gas formed from Waste Thermal Pyrolysis process was addressed. Results showed that there is no big difference in the flame shape between MNDF and SNDF, and lift off was detected in MIDF but flame is more stable in SIDF which contains hydrogen with high combustion velocity as flow rate in first nozzle is increased. And radiation heat flux in inverse diffusion flame of synthesis gas was found to be more by 1.5 times than that in inverse diffusion flame of methane because of higher mole fraction of $CO_2$ with high emissivity in product gas.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.2
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• pp.106-112
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• 2007

Advanced back-end processing requires the integration of low-k dielectrics and Cu. However, in the presence of an electric field and a temperature, positive Cu ions may drift rapidly through dielectric and causing reliability problems. Therefore, in this paper, Cu+ drift diffusion in two low-k materials and silicon oxide is evaluated. The drift diffusion is investigated by measuring shifts in the flat band voltage of capacitance-voltage measurements on Cu gate capacitors after bias thermal stressing. The Cu+ drift late in $SiO_{x}C_{y}\;(2.85{\pm}0.03)$ and Polyimide(2.7${\leq}k{\leq}3.0$) is Considerably lower than in thermal oxide.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.708-712
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• 2004

Shallow $p^+-n$ junctions were formed by ion implantation and dual-step annealing processes. The dopant implantation was performed into the crystalline substrates using BF$_2$ ions. The annealing was performed with a rapid thermal processor and a furnace. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of junction depth and sheet resistance. A new simulator is designed to model boron diffusion in silicon. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. Using initial conditions and boundary conditions, coupled diffusion equations are solved successfully. The simulator reproduced experimental data successfully.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.4
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• pp.263-270
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• 2020

In this study, the physical mechanism and diffusion effects in aluminium implanted silicon was investigated. For fabricating power semiconductor devices, an aluminum implantation can be used as an emitter and a long drift region in a power diode, transistor, and thyristor. Thermal treatment with O₂ gas exhibited to a remarkably deeper profile than inert gas with N₂ in the depth of junction structure. The redistribution of aluminum implanted through via thermal annealing exhibited oxidation-enhanced diffusion in comparison with inert gas atmosphere. To investigate doping distribution for implantation and diffusion experiments, spreading resistance and secondary ion mass spectrometer tools were used for the measurements. For the deep-junction structure of these experiments, aluminum implantation and diffusion exhibited a junction depth around 20 ㎛ for the fabrication of power silicon devices.

• Bulletin of the Korean Chemical Society
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• v.28 no.10
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• pp.1697-1704
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• 2007

We present results for transport properties of diatomic fluids by isothermal-isobaric (NpT) equilibrium molecular dynamics (EMD) simulations using Green-Kubo and Einstein formulas. As the molecular elongation of diatomic molecules increases from the spherical monatomic molecule, the diffusion coefficient increases, indicating that longish shape molecules diffuse more than spherical molecules, and the rotational diffusion coefficients are almost the same in the statistical error since random rotation decreases. The calculated translational viscosity decreases with the molecular elongation of diatomic molecule within statistical error bar, while the rotational viscosity increases. The total thermal conductivity decreases as the molecular elongation increases. This result of thermal conductivity for diatomic molecules by EMD simulations is again inconsistent with the earlier results of those by non-equilibrium molecular dynamics (NEMD) simulations even though the missing terms related to rotational degree of freedom into the Green-Kubo and Einstein formulas with regard to the calculation of thermal conductivity for molecular fluids are included.