Shallow P+-n Junction Formation and the Design of Boron Diffusion Simulator |
김재영
(한국항공대학교 전자정보통신컴퓨터공학부)
이충근 (한국항공대학교 전자정보통신컴퓨터공학) 김보라 (한국항공대학교 전자정보통신컴퓨터공학) 홍신남 (한국항공대학교 전자정보통신컴퓨터공학부) |
1 |
A Model for Boron Short Time Diffusion after Ion Implantation
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2 |
The effect of ILD material and BPSG densification anneal on the device characteristics
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3 |
Fabrication of submicron junctions-proximity rapid thermal diffusion of phosphorus, boron and arsenic
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DOI ScienceOn |
4 |
A Kinetic Model for Anomalous Diffusion during Past-Implant Annealing
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5 |
Point defects and dopant diffusion in silicon
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DOI |
6 |
Effect of additional low temperature RTA on ultra-shallow <TEX>$p^+$</TEX>-n junction formation
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