• 대한금속재료학회지
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• 제48권12호
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• pp.1047-1055
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• 2010

The objective of this study is to investigate the ballistic properties of Zr-based amorphous alloy surface composites fabricated by high-energy electron-beam irradiation. The mixture of Zr-based amorphous powders and $LiF+MgF_2$ flux powders was deposited on a pure Ti substrate, and then an electron beam irradiated this powder mixture to fabricate a one-layer surface composite. A four-layer surface composite, in which the composite layer thickness was larger than 3 mm, was also fabricated by irradiating the deposited powder mixture by an electron beam three times on the one-layer surface composite. The microstructural analysis results indicated that a small amount of fine crystalline particles were homogeneously distributed in the amorphous matrix of the surface composite layer. According to the ballistic impact test results, the surface composite layers effectively blocked a fast traveling projectile, while many cracks were formed at the composite layers, and thus the surface composite plates were not perforated. The surface composite layer containing ductile ${\beta}$ dendritic phases showed a better ballistic performance than the one without dendrites because dendritic phases hindered the propagation of shear bands or cracks.

• 대한금속재료학회지
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• 제48권11호
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• pp.1035-1040
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• 2010

The research efforts on GaN-based light-emitting diodes (LEDs) keep increasing due to their significant impact on the illumination industry. Surface mount technology (SMT) is widely used to mount the LED packages for practical application. In surface mount soldering both the device body and leads are intentionally heated by a reflow process. We studied on the effects of multiple reflows on microstructural variation and joint strength of the solder joints between the LED package and the substrate. In this study, Pb-free Sn-3.0Ag-0.5Cu solder and a finished pad with organic solderability preservatives (OSP) were employed. A $Cu_6Sn_5$ intermetallic compound (IMC) layer was formed during the multiple reflows, and the thickness of the IMC layerincreased with an increasing number of reflows. The shear force decreased after three reflows. From the observation of the fracture surface after a shear test, partially brittle fractures were observed after five reflows.

• 대한금속재료학회지
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• 제46권7호
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• pp.458-463
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• 2008

High purity Fe thin films were prepared by the ion beam deposition method with $^{56}Fe^{+}$ions on the Si substrate at the room temperature. The Fe thin films were deposited at the ion energy of 50 eV and 100 eV. Microstructural properties were investigated on the atomic scale using high-resolution transmission electron microscopy (HRTEM). It was found that the Fe thin film obtained with the energy of 50 eV having an excellent corrosion resistance consists of the amorphous layer of ~15 nm in thickness and the bcc crystalline layer of about 30 nm in grain size, while the thin film obtained with the energy of 100 eV having a poor corrosion resistance consists of little amorphous layer and the defective crystalline layer. Furthermore the crystal structures and arrangements of the oxide layers formed on the Fe thin films were analyzed by processing of the HRTEM images. It was concluded that the corrosion behavior of Fe thin films relates to the surface morphology and the crystalline structure as well as the degree of purification.

• Current Applied Physics
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• 제18권12호
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• pp.1496-1506
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• 2018

Organic/inorganic ultraviolet photodetector was fabricated using thermal evaporation technique. Organic/inorganic heterojunction based on thermally evaporated copper (II) acetylacetonate thin film of thickness 200 nm deposited on an n-type silicon substrate is introduced. I-V characteristics of the fabricated heterojunction were investigated under UV illumination of intensity $65mW/cm^2$. The diode parameters such as ideality factor, n, barrier height, ${\Phi}_B$, and reverse saturation current, $I_s$, were determined using thermionic emission theory. The series resistance of the fabricated diode was determined using modified Nord's method. The estimated values of series resistance and barrier height of the diode were about $0.33K{\Omega}$ and 0.72 eV, respectively. The fabricated photodetector exhibited a responsivity and specific detectivity about 9 mA/W and $4.6{\times}10^9$ Jones, respectively. The response behavior of the fabricated photodetector was analyzed through ON-OFF switching behavior. The estimated values of rise and fall time of the present architecture under UV illumination were about 199 ms and 154 ms, respectively. Finally, enhancing the photoresponsivity of the fabricated photodetector, post-deposition plasma treatment process was employed. A remarkable modification of the device performance was noticed as a result of plasma treatment. These modifications are representative in a decrease of series resistance and an increase of photoresponsivity and specific detectivity. The process of plasma treatment achieved an increment of external quantum efficiency from 5.53% to 8.34% at -3.5 V under UV illumination.

• 반도체디스플레이기술학회지
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• 제18권4호
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• pp.69-74
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• 2019

The aim of this work is to investigate the effect of the microtip length in a slot-die head on coating of a fine poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) stripe. To this end, we have employed a meniscus guide with a 150-㎛-wide microtip and performed roll-to-roll slot-die coatings by varying its length between 500 ㎛ and 50 ㎛. When the microtip length is 150 ㎛ or shorter, we have observed three unexpected phenomena; 1) though the solution spreads much wider than the microtip width, yet the coated stripe width is almost the same as the microtip width, 2) the stripe width decreases, but the stripe thickness is rather increased with increasing coating speed at a fixed flow rate, 3) we obtain stripes much narrower than the microtip width at high coating speeds. It is due to the fact that 1) the meniscus is not well controlled by a short microtip, 2) the main stream of solution from the outlet is very close to the substrate and thus the distributed solution along the head lip merges with the main stream, and 3) the solution is not spread over the entire microtip end at high coating speeds, causing a tiny wobble in the meniscus. Using the 150-㎛-wide and 250-㎛-long microtip, we have fabricated 153-㎛-wide and 94-nm-thick PEDOT:PSS stripe at the maximum coating speed of 13 mm/s. To demonstrate its applicability in solution-processable organic light-emitting diodes (OLEDs), we have also fabricated an OLED device with the fine PEDOT:PSS stripe and obtained strong light emission from it.

• 한국광학회지
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• 제19권4호
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• pp.249-254
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• 2008

새 구조의 액정 엑스선 감지기를 만들었다. 이것은 액정판을 만들고 유리판을 얇게 식각한 다음, 그 유리판 위에 반사막과 광전도층을 연속하여 입힌 구조이다. 새 구조의 액정엑스선 감지기는 공정의 안정성, 대면적화, 감도 등에서 이미 상품화된 엑스선 감지기와도 충분히 경쟁할 수 있으며, 따라서 성공적으로 상용화 할 수 있음을 확인했다.

• 한국정보통신학회논문지
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• 제23권6호
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• pp.740-747
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• 2019

본 논문에서는 WLAN과 WiMAX 대역에서 동작 가능하도록 삼중대역 안테나를 설계 제작 및 측정하였다. 마이크로스트립 선로를 사용하여 급전하였으며 패치면에 두 개의 분기된 선로를, 그리고 접지면에 사각슬릿을 삽입하여 삼중대역 특성을 갖도록 설계하였다. 그리고 임피던스 대역폭의 특성을 개선하기 위해 접지면에 수직 스트립 선로를 추가하였다. 제안된 안테나는 유전율 4.4 그리고 두께 1.0mm인 유전체 기판 위에 $18.0mm(W1){\times}37.3mm$ (L4+L5+L7) 의 크기로 설계되었다. 제작 및 측정 결과로부터 2.4/2.5 GHz에서는 480 MHz (2.32~2.80 GHz), 3.5 GHz 대역에서는 810 MHz (3.22 ~ 4.03 GHz), 그리고 5.0 GHz 대역에서는 1,820 MHz (5.05 ~ 6.87 GHz)의 대역폭을 얻었다. 또한 측정된 3D 방사패턴을 제시하였으며 요구되는 주파수 대역에서 측정된 이득값을 제시하였다.

• 반도체디스플레이기술학회지
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• 제17권4호
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• pp.42-45
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• 2018

As The semiconductor decrease from 10 nanometer to 7 nanometer, It is suggested that "More than Moore" is needed to follow Moore's Law, which has been a guide for the semiconductor industry. Fan-Out Wafer Level Package(FOWLP) is considered as the key to "More than Moore" to lead the next generation in semiconductors, and the reasons are as follows. the fan-out WLP does not require a substrate, unlike conventional wire bonding and flip-chip bonding packages. As a result, the thickness of the package reduces, and the interconnection becomes shorter. It is easy to increase the number of I / Os and apply it to the multi-layered 3D package. However, FOWLP has many issues that need to be resolved in order for mass production to become feasible. One of the most critical problem is the warpage problem in a process. Due to the nature of the FOWLP structure, the RDL is wired to multiple layers. The warpage problem arises when a new RDL layer is created. It occurs because the solder ball reflow process is exposed to high temperatures for long periods of time, which may cause cracks inside the package. For this reason, we have studied warpage in the FOWLP structure using commercial simulation software through the implementation of the reflow process. Simulation was performed to reproduce the experiment of products of molding compound company. Young's modulus and poisson's ratio were found to be influenced by the order of influence of the factors affecting the distortion. We confirmed that the lower young's modulus and poisson's ratio, the lower warpage.

• 한국버섯학회지
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• 제16권4호
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• pp.263-266
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• 2018

표고 시설재배에 있어 적정 상대습도를 구명하여 고품질 버섯생산 데이터를 제시하기 위해 상대습도를 달리 처리한 결과는 다음과 같다. 상대습도에 따른 생육특성을 조사한 결과, 갓의 명도값은 RH65%에서 높았고, 적색도는 RH95%에서 높았으며, 황색도는 상대습도 간 유의적 차이가 나타나지 않았다. 갓의 경도는 RH95%에서 높은 경향이었다. 갓직경은 RH95%에서 높게 측정되었고, 갓두께는 RH95%에서 높았다. 대길이의 경우 유의적 차이가 나타나지 않았지만 상대습도가 증가할수록 대길이가 증가하는 경향을 보였으며, 대직경은 RH95%에서 높게 측정되었다. 수량은 RH95%에서 유의적으로 높게 측정되었다. 화고발생률은 상대습도가 낮아질수록 높게 조사되었다. 위의 결과를 통해 RH95%에서 표고 자실체의 크기, 수량이 높게 조사되었지만 버섯의 갓색이 어둡고 화고 발생 비율이 낮은 결과를 나타내어 시설재배에서 고품질의 화고 버섯을 생산할 수 있는 상대습도는 65%와 85%인 것으로 판단되었다.

• 한국버섯학회지
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• 제17권3호
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• pp.162-166
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• 2019

느타리버섯 재배에서 영양원으로 가장 많이 사용하고 있는 면실박의 첨가비율은 12%이상이면 충분할 것으로 판단된다. 면실박을 12~18% 첨가된 배지에서는 균사생장량은 13.9~14.0 cm로 균사생장이 대조구와 같거나 조금 빨랐다. 그러나 면실박을 10% 이하 첨가한 배지에서는 대조구보다는 균사생장이 느렸다. 면실박 첨가량에 따른 균사밀도는 처리간에는 뚜렷한 차이를 보이지 않고 높은 밀도를 보였다. CN율은 면실박 2%첨가에서 42.5, 면실박 10%첨가에서 26.8, 면실박 12%첨가에서 25.4였으며, 면실박 16% 첨가에서는 20.4 그리고 면실박 18% 첨가에서는 18로 대조구와 비슷한 수치를 보였다. 갓 직경과 두께는 면실박 14% 처리에서 가장 높았고, 대의 굵기는 면실박 12% 첨가된 처리에서 가장 높았다. 대와 갓의 경도는 면실박 16% 첨가된 처리에서 가장 높았다. 대의 색도를 측정한 결과 L값은 면실박이 적게 첨가된 처리구에서 낮은 경향을 보였지만, a, b 값은 처리간에 뚜렷한 차이를 보이지 않았다. 병당 수량은 대조구가 147.2 g/850 ml였고, 면실박 12% 첨가에서 147.6 g/850 ml으로 대조구보다 조금 높았다.