• Journal of the Korean institute of surface engineering
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• v.36 no.4
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• pp.296-300
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• 2003

Extended cylindrical magnetron sputtering system with rotating 600-mm long and 90-mm diameter graphite cathode and pulsed power supply voltage generator were developed and fabricated. Time-dependent Langmuir probe characteristics as well as carbon films thickness were measured. It was shown that ratio of ions flux to carbon atoms flux for pulsed magnetron discharge mode was equal to $\Phi_{i}$ $\Phi$sub C/ = 0.2. It did not depend on the discharge current in the range of $I_{d}$ / = 10∼60 A since both the plasma density and the film deposition rate were found approximately proportional to the discharge current. In spite of this fact carbon film structure was found to be strongly dependent on the discharge current. Grain size increased from 100 nm at $I_{d}$ = 10∼20 A to 500 nm at $I_{d}$ = 40∼60 A. To deposit fine-grained hard nanocrystalline or amorphous carbon coating current regime with $I_{d}$ = 20 A was chosen. Pulsed negative bias voltage ($\tau$= 40 ${\mu}\textrm{s}$, $U_{b}$ = 0∼10 ㎸) synchronized with magnetron discharge pulses was applied to a substrate and voltage of $U_{b}$ = 3.4 ㎸ was shown to be optimum for a hard carbon film deposition. Lower voltages were not sufficient for amorphization of a growing graphite film, while higher voltages led to excessive ion bombardment and effects of recrystalization and graphitization.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.12
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• pp.2374-2381
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• 2007

.We have studied to obtain the properly conditions about impedance matching of the SAW filter for the SPUDT type and the bidirectional transducer type later. And we have studied to obtain the SAW filter for the Slanted Finger Interdigital Transducer(SFIT), was formed on the Langasite substrate and was evaporated by Aluminum-Copper alloy and then we performed computer-simulated by simulator In case the SPUDT, we have employed that the number of pairs of the input and output IDT are 50 pairs and the thickness and the width of reflector are $5000{\AA}$ and $3.6{\mu}m$, respectively. And the of the bidirectional transducer, the width of IDT' fingers and the space between IDT' finger and reflector is $1.8{\mu}m$, respectively. Also, we have performed to series connected the SPUDT type with the bidirectional transducer type filter. The frequency response of the fabricated SAW filter has the property that the center frequency is about 190MHz and bahdwidth at the 3dB is probably 5.3MHz after when we have matched impedance. Also, we could obtain that ripple characteristics is less than 0.3dB and insert loss is probably -20dB after when we have matched impedance.

• Korean Journal of Metals and Materials
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• v.48 no.12
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• pp.1130-1135
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• 2010

Cu/carbon nano-particle hybrids were fabricated through the cathodic electrophoretic deposition (EPD) process. CNT and CNF nano-particles were modified to give positive charges by polyethyleneimine (PEI) treatment before depositing them on the substrate. Since a Cu plate was used as an anode in the EPD process, Cu particles were also deposited along with the carbon nano-particles. Experimental observation showed the nano-hybrids constructed a novel formicary-like nano-structure which is strong and highly conductive. Utilizing the hybrids, carbon fiber composites were manufactured, and their electrical conductivity and interlaminar shear strength were measured. In addition, the deposition morphology and failure surface were examined by SEM observations. Results demonstrated that the electrical conductivities in the through-the-thickness direction and the interlaminar shear strength significantly increased by 350~2100% and 14%, respectively.

• Korean Journal of Metals and Materials
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• v.48 no.12
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• pp.1047-1055
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• 2010

The objective of this study is to investigate the ballistic properties of Zr-based amorphous alloy surface composites fabricated by high-energy electron-beam irradiation. The mixture of Zr-based amorphous powders and $LiF+MgF_2$ flux powders was deposited on a pure Ti substrate, and then an electron beam irradiated this powder mixture to fabricate a one-layer surface composite. A four-layer surface composite, in which the composite layer thickness was larger than 3 mm, was also fabricated by irradiating the deposited powder mixture by an electron beam three times on the one-layer surface composite. The microstructural analysis results indicated that a small amount of fine crystalline particles were homogeneously distributed in the amorphous matrix of the surface composite layer. According to the ballistic impact test results, the surface composite layers effectively blocked a fast traveling projectile, while many cracks were formed at the composite layers, and thus the surface composite plates were not perforated. The surface composite layer containing ductile ${\beta}$ dendritic phases showed a better ballistic performance than the one without dendrites because dendritic phases hindered the propagation of shear bands or cracks.

• Korean Journal of Metals and Materials
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• v.48 no.11
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• pp.1035-1040
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• 2010

The research efforts on GaN-based light-emitting diodes (LEDs) keep increasing due to their significant impact on the illumination industry. Surface mount technology (SMT) is widely used to mount the LED packages for practical application. In surface mount soldering both the device body and leads are intentionally heated by a reflow process. We studied on the effects of multiple reflows on microstructural variation and joint strength of the solder joints between the LED package and the substrate. In this study, Pb-free Sn-3.0Ag-0.5Cu solder and a finished pad with organic solderability preservatives (OSP) were employed. A $Cu_6Sn_5$ intermetallic compound (IMC) layer was formed during the multiple reflows, and the thickness of the IMC layerincreased with an increasing number of reflows. The shear force decreased after three reflows. From the observation of the fracture surface after a shear test, partially brittle fractures were observed after five reflows.

• Korean Journal of Metals and Materials
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• v.46 no.7
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• pp.458-463
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• 2008

High purity Fe thin films were prepared by the ion beam deposition method with $^{56}Fe^{+}$ions on the Si substrate at the room temperature. The Fe thin films were deposited at the ion energy of 50 eV and 100 eV. Microstructural properties were investigated on the atomic scale using high-resolution transmission electron microscopy (HRTEM). It was found that the Fe thin film obtained with the energy of 50 eV having an excellent corrosion resistance consists of the amorphous layer of ~15 nm in thickness and the bcc crystalline layer of about 30 nm in grain size, while the thin film obtained with the energy of 100 eV having a poor corrosion resistance consists of little amorphous layer and the defective crystalline layer. Furthermore the crystal structures and arrangements of the oxide layers formed on the Fe thin films were analyzed by processing of the HRTEM images. It was concluded that the corrosion behavior of Fe thin films relates to the surface morphology and the crystalline structure as well as the degree of purification.

• Current Applied Physics
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• v.18 no.12
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• pp.1496-1506
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• 2018

Organic/inorganic ultraviolet photodetector was fabricated using thermal evaporation technique. Organic/inorganic heterojunction based on thermally evaporated copper (II) acetylacetonate thin film of thickness 200 nm deposited on an n-type silicon substrate is introduced. I-V characteristics of the fabricated heterojunction were investigated under UV illumination of intensity $65mW/cm^2$. The diode parameters such as ideality factor, n, barrier height, ${\Phi}_B$, and reverse saturation current, $I_s$, were determined using thermionic emission theory. The series resistance of the fabricated diode was determined using modified Nord's method. The estimated values of series resistance and barrier height of the diode were about $0.33K{\Omega}$ and 0.72 eV, respectively. The fabricated photodetector exhibited a responsivity and specific detectivity about 9 mA/W and $4.6{\times}10^9$ Jones, respectively. The response behavior of the fabricated photodetector was analyzed through ON-OFF switching behavior. The estimated values of rise and fall time of the present architecture under UV illumination were about 199 ms and 154 ms, respectively. Finally, enhancing the photoresponsivity of the fabricated photodetector, post-deposition plasma treatment process was employed. A remarkable modification of the device performance was noticed as a result of plasma treatment. These modifications are representative in a decrease of series resistance and an increase of photoresponsivity and specific detectivity. The process of plasma treatment achieved an increment of external quantum efficiency from 5.53% to 8.34% at -3.5 V under UV illumination.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.69-74
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• 2019

The aim of this work is to investigate the effect of the microtip length in a slot-die head on coating of a fine poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) stripe. To this end, we have employed a meniscus guide with a 150-㎛-wide microtip and performed roll-to-roll slot-die coatings by varying its length between 500 ㎛ and 50 ㎛. When the microtip length is 150 ㎛ or shorter, we have observed three unexpected phenomena; 1) though the solution spreads much wider than the microtip width, yet the coated stripe width is almost the same as the microtip width, 2) the stripe width decreases, but the stripe thickness is rather increased with increasing coating speed at a fixed flow rate, 3) we obtain stripes much narrower than the microtip width at high coating speeds. It is due to the fact that 1) the meniscus is not well controlled by a short microtip, 2) the main stream of solution from the outlet is very close to the substrate and thus the distributed solution along the head lip merges with the main stream, and 3) the solution is not spread over the entire microtip end at high coating speeds, causing a tiny wobble in the meniscus. Using the 150-㎛-wide and 250-㎛-long microtip, we have fabricated 153-㎛-wide and 94-nm-thick PEDOT:PSS stripe at the maximum coating speed of 13 mm/s. To demonstrate its applicability in solution-processable organic light-emitting diodes (OLEDs), we have also fabricated an OLED device with the fine PEDOT:PSS stripe and obtained strong light emission from it.

• Korean Journal of Optics and Photonics
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• v.19 no.4
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• pp.249-254
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• 2008

We developed a new x-ray image sensor utilizing a reflection-mode liquid crystal panel as its sensitive element, and tested its functionality by using it to obtain an x-ray image of a printed circuit board. In the liquid crystal x-ray image sensors hitherto reported, the liquid crystal layer is in direct contact with the photoconductive film which is deposited on a glass substrate. In the fabrication of the new x-ray image sensor, a liquid crystal panel is fabricated in the first step by using a pair of glass plates of a few centimeters thicknrss. Then one of the glass substrates is ground until its thickness is reduced to about $60\;{\mu}m$. After polishing the glass plate, dielectric films for high reflectance at 630 nm, a film of amorphous selenium for photoconduction, and a transparent conductive film for electrode are deposited in sequence. The new x-ray image sensor has several merits: primarily, fabrication of a large area sensor is more easily compared with the old fashioned x-ray image sensors. Since the reflection type liquid crystal panel has a very steep response curve, the new x-ray sensor has much more sensitivity to x-rays compared with the conventional x-ray area sensor, and the radiation dosage can be reduced down to less then 20%. By combining the new x-ray sensor with CCD camera technology, real-time x-ray images can be easily captured. We report the structure, fabrication process and characteristics of the new x-ray image sensor.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.23 no.6
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• pp.740-747
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• 2019

In this paper, an antenna applicable to WLAN and WiMAX frequency bands is designed, fabricated, and measured. The proposed antenna is designed to have two branch strip line in the patch plane and a rectangular slit in the ground plane based on microstrip feeding for triple band characteristics and added a vertical strip in the ground plane to enhance impedance bandwidth characteristics. The proposed antenna is designed on a substrate with a relative permittivity of 4.4, a thickness of 1.0 mm, and has a size of $18.0mm(W1){\times}37.3mm$ (L4+L5+L7). From the fabricated and measured results, impedance bandwidths of 480 MHz (2.32 to 2.80 GHz) for 2.4/2.5 GHz band, 810 MHz (3.22 to 4.03 GHz) for 3.5 GHz band, and 1,820 MHz (5.05 to 6.87 GHz) for 5.0 GHz band were obtained based on the impedance bandwidth. Measured 3D pattern and gains are displayed.