• 한국해양공학회지
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• 제28권1호
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• pp.55-63
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• 2014

In this paper, we propose an threshold-based Schur algorithm for estimating the media characteristics of sub-bottom multi-layers by using the signal generated by a parametric array transducer. We use the KZK model to generate a parametric array signal, and use the proposed threshold-based Schur algorithm for estimating the reflection coefficients of multiple sea bottom layers. Using computer simulation, we verify that the difference frequency component generated by the KZK model prevails over the signals of primary frequencies at long range. For the simulation, we use the transmit signal generated by the KZK and the reflected signal obtained from a lattice filter model for the seawater and sub-bottom of multi-level non-homogeneous layers. Through the simulation, we verify that the proposed threshold-based Schur algorithm can give much more accurate and efficient estimates of the reflection coefficients than methods using received signal, matched filter output signal, and normal Schur algorithm output.

• Nuclear Engineering and Technology
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• 제56권5호
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• pp.1854-1862
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• 2024

This study aims to investigate the strain-dependent-deformation property of Gyeongju bentonite buffer material. A series of unconfined compressive tests were performed with cylindrical specimens prepared at varying dry densities (𝜌_d = 1.58 g/cm³ to 1.74 g/cm³) using cold isostatic pressing technique. It is found that as 𝜌_d increase, the unconfined compressive strength (q_u), failure strain, and elastic modulus (E) of Gyeongju compacted bentonite (GCB) increases. Normalized elastic modulus (E_sec/E_max) degradation curves of GCB specimens are fitted using Ramberg-Osgood model and the elastic threshold strain (𝜀_e,th) is determined through the fitted curves. The strain-dependency of E and Poisson's ratio (v) of GCB were observed. E and v were measured constant below 𝜀_e,th of 0.14 %. Then, E decreases while v increases after exceeding the strain threshold. The E_sec/E_max degradation curves of GCB in this study suggests wider linear range and higher linearity than those of sedimentary clay in previous study. On top of that, the influence of 𝜌_d is observed on E_sec/E_max degradation curves of GCB, showing a slight increase in 𝜀_e,th with increase in 𝜌_d. Furthermore, an empirical model of q_u with 𝜌_d and a correlation model between q_u and E are proposed for Gyeongju bentonite buffer materials.

• 한국소프트웨어감정평가학회 논문지
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• 제16권1호
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• pp.55-63
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• 2020

광대역 광통신 시스템에 사용되는 레이저는 우수한 주파수 선택성과 모드 안정성을 가져야한다. DFB(Distributed Feedback) 레이저는 고주파로 전류 변조를 하더라도 발진 주파수의 변화가 적다. 본 연구에서는 1.55um의 파장을 갖는 DFB 레이저에서 굴절률 격자와 이득 격자가 동시에 존재할 때, 오른쪽 거울 면에 반사가 일어나지 않도록 유전막 코팅을 하여 ρ_r=0 이 되도록 하였다. 문턱에서 최소 이득을 필요로 하는 제 1모드에 대하여, 종 방향으로의 발진 모드의 빔 분포와 방사전력비 P_l/P_r를 ρ_l의 위상=π인 경우와 ρ_l의 위상=π/2인 경우에 대하여 비교 검증했다. ρ_l의 위상=π인 경우, 낮은 문턱 전류와 높은 주파수 안정성을 얻기 위해서는, κL이 8보다 커야 한다. ρ_l의 위상=π/2인 경우, 낮은 문턱 전류를 위해서는 κL=1.0이 되도록 해야 하고, 이때 발진 주파수는 격자 주파수와 일치한다. 반사 방지 코팅을 하지 않은, 두 개의 거울 면을 가진 1.55um의 파장을 갖는 DFB 레이저보다, 한쪽 거울 면에 무반사 코팅을 한 경우에 모드 선별성이 훨씬 크다.

• 한국전기전자재료학회논문지
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• 제25권10호
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• pp.811-816
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• 2012

The effect of co-sputtering condition on the structural properties of $Mg_xZn_{1-x}O$ thin films grown by RF magnetron co-sputtering system was investigated for manufacturing ZnO/MgZnO structure LED. $Mg_xZn_{1-x}O$ thin films were grown with ZnO and MgO target varying RF power. Structural properties were investigated by X-ray diffraction (XRD) and Energy dispersive spectroscopy (EDS). The ZnO thin films have sufficient crystallinity on the high RF power. As RF power of ZnO target increased, the contents of MgO in the $Mg_xZn_{1-x}O$ film decreased. LED was manufactured using ZnO/MgZnO multi-layer on p-GaN/$Al_2O_3$ substrate. Threshold voltage of multi-layer LED was appeared at 8 V, and it was luminesced at wave length of 550 nm.

• 전기전자학회논문지
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• 제25권4호
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• pp.770-773
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• 2021

본 논문에서는 tapering과 ferroelectric(HfO₂)구조가 적용된 3D NAND flash memory의 프로그램 이후 시간경과에 따른 retention특징을 분석했다. Nitride에 trap된 전자는 시간이 지남에 따라 lateral charge migration이 발생한다. 프로그램 이후 시간이 지남에 따라 trap된 전자가 tapering에 의해 두꺼워진 채널 쪽으로 lateral charge migration이 더 많이 발생하는 것을 확인했다. 또한 Oxide-Nitride-Ferroelectric (ONF) 구조는 polarization에 의해 lateral charge migration이 완화되기 때문에 기존 Oxide-Nitride-Oxide (ONO) 구조 보다 문턱전압(V_th)의 변화량이 줄어든다.

• 한국전기전자재료학회논문지
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• 제19권2호
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• pp.126-129
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• 2006

We investigated an optimized condition of the capacitor threshold voltage implantation(capacitor $V_T$ Implant) in planar P-MOS DRAM Cell. Several samples with different condition of the capacitor $V_T$ Implant were prepared. It appeared that for the capacitor $V_T$ Implant of $BF_2\;2.0{\times}l0^{13}\;cm^{-2}$ 15 KeV, refresh time is three times larger than that of the sample, in which capacitor $V_T$ Implant is in $BF_2\;1.0{\times}l0^{13}\;cm^{-2}$ 15 KeV. Raphael simulation revealed that the lowed maximum electric field and lowed minimum depletion capacitance ($C_{MIN}$) under the capacitor resulted in well refresh characteristics.

• JSTS:Journal of Semiconductor Technology and Science
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• 제9권3호
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• pp.148-152
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• 2009

Recent CMOS technology scaling has seriously eroded the bit-line noise immunity of register files due to the consequent increase in active bit-line leakage currents. To restore its noise immunity while maintaining performance, we propose and evaluate a $256{\times}40$-bit register file incorporating dual-$V_t$ bit-lines with a boosted gate overdrive voltage in 65 nm bulk CMOS technology. Simulation results show that the proposed bootsrapping scheme lowers leakage current by a factor of 450 without its performance penalty.

• JSTS:Journal of Semiconductor Technology and Science
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• 제10권2호
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• pp.79-99
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• 2010

Pulsed current-voltage (I-V) methods are introduced to evaluate the impact of fast transient charge trapping on the performance of high-k dielectric transistors. Several pulsed I-V measurement configurations and measurement requirements are critically reviewed. Properly configured pulsed I-V measurements are shown to be capable of extracting such device characteristics as trap-free mobility, trap-induced threshold voltage shift (${\Delta}V_t$), as well as effective fast transient trap density. The results demonstrate that the pulsed I-V measurements are an essential technique for evaluating high-$\kappa$ gate dielectric devices.

• Nanomaterials
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• 제12권11호
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• pp.1808-1817
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• 2022

A machine-learning (ML) technique was used to optimize the energetic-trap distributions of nano-scaled charge trap nitride (CTN) in 3D NAND Flash to widen the threshold voltage (V_th) window, which is crucial for NAND operation. The energetic-trap distribution is a critical material property of the CTN that affects the V_th window between the erase and program V_th. An artificial neural network (ANN) was used to model the relationship between the energetic-trap distributions as an input parameter and the V_th window as an output parameter. A well-trained ANN was used with the gradient-descent method to determine the specific inputs that maximize the outputs. The trap densities (N_TD and N_TA) and their standard deviations (σ_TD and σ_TA) were found to most strongly impact the V_th window. As they increased, the V_th window increased because of the availability of a larger number of trap sites. Finally, when the ML-optimized energetic-trap distributions were simulated, the V_th window increased by 49% compared with the experimental value under the same bias condition. Therefore, the developed ML technique can be applied to optimize cell transistor processes by determining the material properties of the CTN in 3D NAND Flash.

• 한국전기전자재료학회논문지
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• 제13권9호
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• pp.729-734
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• 2000

Recently, Very Large Scale Integrated (VLSI) circuit & deep-submicron bulk Complementary Metal Oxide Semiconductor(CMOS) devices require gate electrode materials such as metal-silicide, Titanium-silicide for gate oxides. Many previous authors have researched the improvement sub-micron gate oxide quality. However, few have reported on the electrical quality and reliability on the ultra thin gate oxide. In this paper, at first, I recommand a novel shallow trench isolation structure to suppress the corner metal-oxide semiconductor field-effect transistor(MOSFET) inherent to shallow trench isolation for sub 0.1${\mu}{\textrm}{m}$ gate oxide. Different from using normal LOCOS technology deep-submicron CMOS devices using novel Shallow Trench Isolation(STI) technology have a unique"inverse narrow-channel effects"-when the channel width of the devices is scaled down, their threshold voltage is shrunk instead of increased as for the contribution of the channel edge current to the total channel current as the channel width is reduced. Secondly, Titanium silicide process clarified that fluorine contamination caused by the gate sidewall etching inhibits the silicidation reaction and accelerates agglomeration. To overcome these problems, a novel Two-step Deposited silicide(TDS) process has been developed. The key point of this process is the deposition and subsequent removal of titanium before silicidation. Based on the research, It is found that novel STI structure by the SEM, in addition to thermally stable silicide process was achieved. We also obtained the decrease threshold voltage value of the channel edge. resulting in the better improvement of the narrow channel effect. low sheet resistance and stress, and high threshold voltage. Besides, sheet resistance and stress value, rms(root mean square) by AFM were observed. On the electrical characteristics, low leakage current and trap density at the Si/SiO$_2$were confirmed by the high threshold voltage sub 0.1${\mu}{\textrm}{m}$ gate oxide.