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http://dx.doi.org/10.4313/JKEM.2012.25.10.811

The Characteristics of Multi-layer Structure LED with MgxZn1-xO Thin Films  

Son, Ji-Hoon (DRAM Development Division, SK Hynix)
Kim, Sang-Hyun (Division of Electrical and Electronics Engineering, Korea Maritime University)
Jang, Nak-Won (Division of Electrical and Electronics Engineering, Korea Maritime University)
Kim, Hong-Seong (Department of Nano Semiconductor Engineering, Korea Maritime University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.25, no.10, 2012 , pp. 811-816 More about this Journal
Abstract
The effect of co-sputtering condition on the structural properties of $Mg_xZn_{1-x}O$ thin films grown by RF magnetron co-sputtering system was investigated for manufacturing ZnO/MgZnO structure LED. $Mg_xZn_{1-x}O$ thin films were grown with ZnO and MgO target varying RF power. Structural properties were investigated by X-ray diffraction (XRD) and Energy dispersive spectroscopy (EDS). The ZnO thin films have sufficient crystallinity on the high RF power. As RF power of ZnO target increased, the contents of MgO in the $Mg_xZn_{1-x}O$ film decreased. LED was manufactured using ZnO/MgZnO multi-layer on p-GaN/$Al_2O_3$ substrate. Threshold voltage of multi-layer LED was appeared at 8 V, and it was luminesced at wave length of 550 nm.
Keywords
ZnO; MgZnO; LED; EDS; Threshold voltage; Wave length;
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