• Nuclear Engineering and Technology
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• 제54권3호
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• pp.842-848
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• 2022

Parametric studies of heat transfer and fluid flow are very important research of interest because the design and operation of fluid flow and heat transfer systems are guided by these parametric studies. The safety of the system operation and system optimization can be determined by decreasing or increasing particular fluid flow and heat transfer parameter while keeping other parameters constant. The parameters that can be varied in order to determine safe and optimized system include system pressure, mass flow rate, heat flux and coolant inlet temperature among other parameters. The fluid flow and heat transfer systems can also be enhanced by the presence of or without the presence of particular effects including gravity effect among others. The advanced Generation IV reactors to be deployed for large electricity production, have proven to be more thermally efficient (approximately 45% thermal efficiency) than the current light water reactors with a thermal efficiency of approximately 33 ℃. SCWR is one of the Generation IV reactors intended for electricity generation. High Performance Light Water Reactor (HPLWR) is a SCWR type which is under consideration in this study. One-eighth of a proposed fuel assembly design for HPLWR consisting of 7 fuel/rod bundles with 9 coolant sub-channels was the geometry considered in this study to examine the effects of system pressure and mass flow rate on wall and fluid temperatures. Gravity effect on wall and fluid temperatures were also examined on this one-eighth fuel assembly geometry. Computational Fluid Dynamics (CFD) code, STAR-CCM+, was used to obtain the results of the numerical simulations. Based on the parametric analysis carried out, sub-channel 4 performed better in terms of heat transfer because temperatures predicted in sub-channel 9 (corner subchannel) were higher than the ones obtained in sub-channel 4 (central sub-channel). The influence of system mass flow rate, pressure and gravity seem similar in both sub-channels 4 and 9 with temperature distributions higher in sub-channel 9 than in sub-channel 4. In most of the cases considered, temperature distributions (for both fluid and wall) obtained at 25 MPa are higher than those obtained at 23 MPa, temperature distributions obtained at 601.2 kg/h are higher than those obtained at 561.2 kg/h, and temperature distributions obtained without gravity effect are higher than those obtained with gravity effect. The results show that effects of system pressure, mass flowrate and gravity on fluid flow and heat transfer are significant and therefore parametric studies need to be performed to determine safe and optimum operating conditions of fluid flow and heat transfer systems.

• EDISON SW 활용 경진대회 논문집
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• 제4회(2015년)
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• pp.357-364
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• 2015

In this work, we investigate the quantum effects exhibited from ultra-thin GAA(gate-all-around) Nanowire FETs for Sub 14nm Technology. We face designing challenges particularly short channel effects (SCE). However traditional MOSFET SCE models become invalid due to unexpected quantum effects. In this paper, we investigated various performance factors of the GAA Nanowire FET structure, which is promising future device. We observe a variety of quantum effects that are not seen when large scale. Such are source drain tunneling due to short channel lengths, drastic threshold voltage increase caused by quantum confinement for small channel area, leakage current through thin gate oxide by tunneling, induced source barrier lowering by fringing field from drain enhanced by high k dielectric, and lastly the I-V characteristic dependence on channel materials and transport orientations owing to quantum confinement and valley splitting. Understanding these quantum phenomena will guide to reducing SCEs for future sub 14nm devices.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 통신소사이어티 추계학술대회논문집
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• pp.216-219
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• 2003

In this paper, we present performance analysis of an IEEE P802.15.3a high rate wireless personal area network transceiver. This physical layer standard uses QOSK as its sub-channel modulation scheme and orthogonal frequency domain modulation (OFDM) for sub-bands. OFDM is used for each sub-band so that multi-path effects are absorbed by equalizer and guard, and fading can be approximately modeled as additive white Gaussian noise. In multi-band ultra-wideband system, DAC quantization error is important noise source since high resolution conversion cannot be used due to high power consumption. Simulation result shows that, to get 640-Mbps throughput, at least 5-bits precision is necessary to maintain bit-error rate under 10$\^$-2/, which can be lowered, with channel coding, to 10$\^$-6/ that is the bit-error rate required by IEEE 802.15 upper protocol layer, in 4-meter LOS fading channel.

• 대한전자공학회논문지SD
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• 제39권5호
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• pp.1-7
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• 2002

Deep sub-micron bulk CMOS circuits require gate electrode materials such as metal silicide and titanium silicide for gate oxides. Many authors have conducted research to improve the quality of the sub-micron gate oxide. However, few have reported on the electrical quality and reliability of an ultra-thin gate. In this paper, we will recommend a novel shallow trench isolation structure and a two-step TiS $i_2$ formation process to improve the corner metal oxide semiconductor field-effect transistor (MOSFET) for sub-0.1${\mu}{\textrm}{m}$ VLSI devices. Differently from using normal LOCOS technology, deep sub-micron CMOS devices using the novel shallow trench isolation (STI) technology have unique "inverse narrow-channel effects" when the channel width of the device is scaled down. The titanium silicide process has problems because fluorine contamination caused by the gate sidewall etching inhibits the silicide reaction and accelerates agglomeration. To resolve these Problems, we developed a novel two-step deposited silicide process. The key point of this process is the deposition and subsequent removal of titanium before the titanium silicide process. It was found by using focused ion beam transmission electron microscopy that the STI structure improved the narrow channel effect and reduced the junction leakage current and threshold voltage at the edge of the channel. In terms of transistor characteristics, we also obtained a low gate voltage variation and a low trap density, saturation current, some more to be large transconductance at the channel for sub-0.1${\mu}{\textrm}{m}$ VLSI devices.

• 대한전자공학회논문지SD
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• 제39권1호
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• pp.83-88
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• 2002

HFET 소자의 선형성과 게이트-트레인 항복특성을 향상시키기 위해 부분채널 도핑된 Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.25/Ga/sub 0.75/As/Al/sub 0.25/Ga/sub 0.75/As 이종접합 구조를 갖는 FET를 제안하였다. 제안된 HFET는 게이트 전극 아래로 도핑되지 않은 AlGaAs 진성공급층을 두어 -2OV 의 높은 항복전압을 얻었다. 또한 소자의 InGaAs 채널에 부분 도핑을 실시하여, 균일 채널 도핑을 실시한 경우보다 향상된 선형성을 유도하였고, 2차원 전산모사 견과와 제작 및 측정결과를 통해 선형성의 향상을 확인하였다. 본 실험에서 제안된 HFET소자는 DC측정 결과와 고주파측정 결과 모두에서 기존의 FET소자들에 비해 향상된 선형성을 나타내었다.

• 한국통신학회논문지
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• 제32권4C호
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• pp.418-424
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• 2007

본 논문에서는 null 부반송파를 갖는 OFDM 시스템에서 단순화된 시간 영역 채널 추적(tracking) 방식을 제안하였다. 제안된 채널 추적 방식은 결정 귀환된 데이터를 이용하여 간단한 주파수 영역 채널 추정을 먼저 수행함으로써 시간 영역 채널 추정을 간략화한 방식이다. 제안된 방식은 기존의 시간영역 채널 추정 방식 보다 계산량 면에서 약 93% 정도 감소한다. 본 논문에서 성능 분석은 추정된 채널 응답의 MSE 성능과 수신기의 BER 성능면에서 이루어졌다. 시뮬레이션 결과 제안된 방식은 줄어든 계산량에도 불구하고 기존의 시간 영역 채널 추적 방식과 동일한 성능을 보였다.

• 한국전기전자재료학회논문지
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• 제28권7호
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• pp.415-418
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• 2015

In this paper, $TiO_2$ based thin-film transistors (TFTs) were fabricated using by an atomic layer deposition with high aspect ratio and excellent step coverage. $TiO_2$ semiconducting layer was deposited showing a rutile phase through the rapid thermal annealing process, and exhibited TFT characteristics with a $200{\mu}m$ channel length of low-leakage currents (none of current flow during off-state), stable threshold voltages (-10 V ~ 0 V), and a much higher on/off current ratio (<$10^5$), respectively.

• Journal of information and communication convergence engineering
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• 제13권4호
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• pp.257-263
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• 2015

In this study, organic field-effect transistors (OFETs) using a copper phthalocyanine (CuPc) material as an active layer and SiO₂ as a gate insulator were fabricated with varying active layer thicknesses and channel lengths. Further, using a thermal evaporation method in a high-vacuum system, we fabricated a CuPc FET device of the top-contact type and used Au materials for the source and drain electrodes. In order to discuss the channel formation and FET characteristics, we observed the typical current-voltage characteristics and calculated the threshold voltage of the CuPc FET device. We also found that the capacitance reached approximately 97 pF at a negative applied voltage and increased upon the accumulation of carriers at the interface of the metal and the CuPc material. We observed the typical behavior of a FET when used as an n-channel FET. Moreover, we calculated the threshold voltage to be about 15-20 V at V_DS = -80 V.

• Journal of Magnetics
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• 제14권1호
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• pp.23-26
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• 2009

Spin injection from a ferromagnet into an n-doped $In_{0.53}Ga_{0.47}As$ channel was electrically detected by a ferromagnetic detector. At T = 20 K, using non-local and local spin-valve measurements, a non-local signal of $2\;{\mu}V$ and a local spin valve signal of 0.041% were observed when the bias current was 1 mA. The band calculation and Shubnikov-de Haas oscillation measurement in a bulk channel showed that the gate controlled spin-orbit interaction was not large enough to control the spin precession but it could be a worthy candidate for a logic device using spin accumulation and diffusion.

• 대한한의학회지
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• 제42권3호
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• pp.44-55
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• 2021

Objectives: As the use of herbal medicinal products (HMPs) increases worldwide, systematic verification of the safety of HMPs is required. The induction of cardiotoxicity is one of the major factors in post-approval withdrawal of medicinal products, and drug-induced cardiotoxicity assessment is emerging as an important step in drug development. In the present study, we evaluated human ether-à-go-go-related gene (hERG) potassium channel-related cardiotoxicity to predict the risk of cardiac arrhythmia in thirteen herbal medicines known to have cardiac toxicity. Methods: We measured the inhibition rate of hERG potassium channel activity of 13 medicinal herbal extracts in hERG-expressing HEK 293 cells using an automated patch-clamping system. Quinidine was used as a positive control for inhibition of hERG activity. Results: Extracts of Evodiae Fructus, Strychni Semen, and Corydalis Tuber potently inhibited the activity of hERG, and IC₅₀ values were 3.158, 19.87, and 41.26 ㎍/mL, respectively. Cnidi Fructus, Ephedra Herba, Lithospermi Radix, Polygoni Multiflori Radix, Visci Ramulus et Folium, Asiasari Radix et Rhizoma, and Scolopendra weakly inhibited hERG activity, and the IC₅₀ value for each herbal medicine was more than 400 ㎍/mL. Aconiti Kusnezoffii Tuber and two types of Aconiti Lateralis Radix Preparata (Po and Yeom) had weak inhibitory activity against hERG, and the IC₅₀ values were more than 700 ㎍/mL. The IC₅₀ value of quinidine against hERG was 1.021 𝜇M. Conclusion: Evodiae Fructus, Strychni Semen, and Corydalis Tuber acted as potent inhibitors against hERG. These herbal medicines may cause cardiac arrhythmia through QT prolongation, so care should be taken when taking them.