Electrical Spin Transport in n-Doped In0.53Ga0.47As Channels

Spin injection from a ferromagnet into an n-doped $In_{0.53}Ga_{0.47}As$ channel was electrically detected by a ferromagnetic detector. At T = 20 K, using non-local and local spin-valve measurements, a non-local signal of $2\;{\mu}V$ and a local spin valve signal of 0.041% were observed when the bias current was 1 mA. The band calculation and Shubnikov-de Haas oscillation measurement in a bulk channel showed that the gate controlled spin-orbit interaction was not large enough to control the spin precession but it could be a worthy candidate for a logic device using spin accumulation and diffusion.