• 제목/요약/키워드: small-swing circuit

검색결과 16건 처리시간 0.03초

고성능 풀 스윙 BiCMOS 논리회로의 설계 (Design of High Performance Full-Swing BiCMOS Logic Circuit)

  • 박종열;한석붕
    • 전자공학회논문지B
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    • 제30B권11호
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    • pp.1-10
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    • 1993
  • This paper proposes a High Performance Full-Swing BiCMOS (HiF-BiCMOS) circuit which improves on the conventional BiCMOS circuit. The HiF-BiCMOS circuit has all the merits of the conventional BiCMOS circuit and can realize full-swing logic operation. Especially, the speed of full-swing logic operation is much faster than that of conventional full-swing BiCMOS circuit. And the number of transistors added in the HiF-BiCMOS for full-swing logic operation is constant regardless of the number of logic gate inputs. The HiF-BiCMOS circui has high stability to variation of environment factors such as temperature. Also, it has a preamorphized Si layer was changed into the perfect crystal Si after the RTA. Remarkable scalability for power supply voltage according to the development of VLSI technology. The power dissipation of HiF-BiCMOS is very small and hardly increases about a large fanout. Though the Spice simulation, the validity of the proposed circuit design is proved.

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트위스티드 다이오드 연결 구조를 이용한 저전압 스윙 도미노 로직 (A New Small-Swing Domino Logic based on Twisted Diode Connections)

  • 안상윤;김석만;장영조;조경록
    • 전자공학회논문지
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    • 제51권4호
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    • pp.42-48
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    • 2014
  • 본 논문에서는, 트위스티드 연결구조를 이용한 새로운 저전압 스윙 도미노 로직 회로를 제안한다. 제안된 회로의 출력스윙 범위는 트위스티드 트랜지스터의 사이즈와 출력 캐패시턴스의 크기에 따라 조절가능하다. 제안된 회로를 적용한 리플캐리덧셈기(Ripple Carry Adder)는 도미노 CMOS로직에 비해 전력소비는 37%감소했고 전력 지연 곱(power-delay product)은 43%감소했다.

실험계획법을 이용한 초소형 스윙암 액추에이터의 설계 (Design of a Small Form Factor Swing Arm type Actuator using Design of Experiments)

  • 박철;유정훈;박노철
    • 한국전산구조공학회:학술대회논문집
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    • 한국전산구조공학회 2006년도 정기 학술대회 논문집
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    • pp.813-819
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    • 2006
  • The state of the art for the design of swing ann actuators for optical disc drives is to obtain the high efficient dynamic characteristics, especially for the small size for the mobile information devices, It is affected by the need of consumers who wants the portable digital storage devices maintaining highly functional and removable characteristics of the optical disk drive (ODD). As a necessary consequence, the need of the small form factor (SFF) storage device has been considered as an important part in the information storage technology. In this paper. we suggest a new conceptual miniaturized swing arm type actuator that has high efficient dynamic characteristics as well as satisfies the sensitivity and the heat emission requirements for the SFF-ODD. It also uses a tracking electromagnetic (EM) circuit for a focusing motion. Due to the size constraint, the thermal problem of optical head arises; therefore, we design an efficiently heat emitted structure for the actuator.

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열안정성을 고려한 초소형 정보저장기기용 액추에이터 구조설계 (Structural design of small form factor swing arm type actuators with thermal stability)

  • 박철;유정훈;박노철;박영필;도야건;중촌자남
    • 정보저장시스템학회논문집
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    • 제2권3호
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    • pp.208-213
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    • 2006
  • The present state of the design of swing arm actuators for optical disc drives is to obtain the high efficient dynamic characteristics within a very compact volume. As a necessary consequence, the need of the small form factor (SFF) storage device has been arisen as major interests in the information storage technology. In this paper, we suggest the miniaturized swing arm type actuator that has high efficient dynamic characteristics for SFF optical disk drive (ODD). For the operating mechanism, it uses a tracking electromagnetic (EM) circuit for a focusing motion together. Moreover, due to the size constraint, the thermal stability of optical head is important. Therefore, the actuator is designed to emit the heat, which is generated by optical pick-up, along the actuator body easily. Initial model is designed based on the topology optimization method considering the thermal conductivity. Then, the structural parts of the actuator are modified to maintain the high sensitivity and to have wide control bandwidth by the design of experiments method (DOE) and new concept of decreasing mass and inertia. Finally, a swing arm type actuator for SFF ODD is suggested and its dynamic characteristics are verified.

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초소형 광디스크 드라이브를 위한 스윙암 타입 엑추에이터 설계 (Design of Swing Arm Type's for Small Sized ODD)

  • 오제승;박세준;이동주;정호섭;박노철;박영필
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2004년도 추계학술대회논문집
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    • pp.70-74
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    • 2004
  • There are many researches being in process to develop the information storage devices applying to the portable devices recently. Based on this need, the information storage devices have to be satisfied with the fast access time, the robustness of the system, high data transfer rate and lower media price. The total size of the drive must design to adapt the portable devices such as CF II card or PC II card size. This paper proposes the swing arm type actuator to insert the designed actuator in the drive of the CF II size. Hereafter the research will be going on to be suitable to the physical standard and design the focus magnetic circuit newly. The swing arm type actuator including this circuit is designed to have the dynamic characteristic satisfying the mechanical specification as well as the BD 1x. Finally, the adaptability to the portable devices was demonstrated by the finite element analysis and optimization of structural part.

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A Novel Sensing Circuit for 2T-2MTJ MRAM Applicable to High Speed Synchronous Operation

  • Jang, Eun-Jung;Lee, Jung-Hwa;Kim, Ji-hyun;Lee, Seungjun
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제2권3호
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    • pp.173-179
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    • 2002
  • We propose a novel sensing circuit for 2T-2MTJ MRAM that can be used for high speed synchronous operation. Proposed bit-line sense amplifier detects small voltage difference in bit-lines and develops it into rail-to-rail swing while maintaining small voltage difference on TMR cells. It is small enough to fit into each column that the whole data array on selected word line are activated as in DRAMs for high-speed read-out by changing column addresses only. We designed a 256Kb read-only MRAM in a $0.35\mu\textrm{m}$ logic technology to verify the new sensing scheme. Simulation result shows a 25ns RAS access time and a cycle time shorter than 10 ns.

Implementation of a Low Power and Reduced EMI Signaling Circuit For a LCD Controller-to-Source Driver Interface

  • Choi, Chul-Ho;Choi, Myung-Ryul
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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    • pp.167-168
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    • 2000
  • We propose a signaling circuit that can reduce power consumption and Electromagnetic Interference (EMI) in a Liquid Crystal Display (LCD) controller-to-source driver interface. The proposed signaling circuit consists of a coder/decoder that can minimize temporal bit transitions in a transmission line and a current-mode driver that can convert voltage swing into a very small amount of current. We have simulated the proposed signaling circuit using the HSPICE and the proposed signaling circuit has been designed in a 0.25 ${\mu}m$ CMOS technology.

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할바 자석배열을 이용한 초소형 정보저장장치의 초점 구동기 설계 (Halbach Array Type Focusing Actuator for Small and Thin Optical Data Storage Device)

  • 이성규;박강호;백문철
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2004년도 추계학술대회논문집
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    • pp.65-69
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    • 2004
  • The small form factor optical data storage devices are developing rapidly nowadays. Since it is designed for portable and compatibility with flash memory, its components such as disk, head, focusing actuator, and spindle motor should be assembled within 5 m thickness. The thickness of focusing actuator is within 2 mm and the total working range is $+/-100{\mu}m$, with the resolution of less than $1{\mu}m$. Since the thickness is limited tightly, it is hard to place the yoke that closes the magnetic circuit and hard to make strong flux density without yoke. Therefore, Halbach array is adopted to increase the magnetic flux of one side without yoke. The proposed Halbach array type focusing actuator has the advantage of thin actuation structure with sacrificing less flux density than conventional magnetic array. The optical head unit is moved on the swing arm type tracking actuator. Focusing coil is attached to swing arm, and Halbach magnet array is positioned at the bottom of deck along the tracking line, and focusing actuator exerts force by the Fleming's left hand rule. The working range and resolution of focusing actuator are analyzed with FEM and experiment.

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1.5V 256kb eFlash 메모리 IP용 저면적 DC-DC Converter 설계 (Design of Low-Area DC-DC Converter for 1.5V 256kb eFlash Memory IPs)

  • 김영희;김홍주;하판봉
    • 한국정보전자통신기술학회논문지
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    • 제15권2호
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    • pp.144-151
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    • 2022
  • 본 논문에서는 배터리 응용을 위해 저면적 DC-DC 변환기를 갖는 1.5V 256kb eFlash 메모리 IP를 설계하였다. 저면적 DC-DC 변환기 설계를 위해서 본 논문에서는 단위 전하펌프 회로에서 펌핑 노드의 전압을 VIN 전압으로 프리차징해주는 회로인 크로스-커플드 (cross-coupled) 5V NMOS 트랜지스터 대신 5V NMOS 프리차징 트랜지스터를 사용하였고, 펌핑 노드의 부스팅된 전압을 VOUT 노드로 전달해주는 트랜지스터로 5V 크로스-커플드 PMOS 트랜지스터를 사용하였다. 한편 5V NMOS 프리차징 트랜지스터의 게이트 노드는 부스트-클록 발생기 회로를 이용하여 VIN 전압과 VIN+VDD 전압으로 스윙하도록 하였다. 그리고 펌핑 커패시터의 한쪽 노드인 클록 신호를 작은 링 발진 (ring oscillation) 주기 동안 full VDD로 스윙하기 위해 각 단위 전하펌프 회로마다 로컬 인버터 (local inverter)를 추가하였다. 그리고 지우기 모드 (erase mode)와 프로그램 모드 (program mode)에서 빠져나와 대기 (stand-by) 상태가 될 때 부스팅된 전압을 VDD 전압으로 프리차징해주는 회로를 사용하는 대신 HV (High-Voltage) NMOS 트랜지스터를 사용하여 VDD 전압으로 프리차징 하였다. 이와같이 제안된 회로를 DC-DC 변환기 회로에 적용하므로 256kb eFLASH IP의 레이아웃 면적은 기존 DC-DC 변환기 회로를 사용한 경우보다 6.5% 정도 줄였다.

전류 감쇠 조정 회로에서의 정밀도 향상 기술 (Accuracy Enhancement Technique in the Current-Attenuator Circuit)

  • 김성권
    • 조명전기설비학회논문지
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    • 제19권8호
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    • pp.116-121
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    • 2005
  • 전류모드 아날로그 회로를 이용하여 FIR(Finite Impulse Response) 필터를 설계하는 경우에 tap coefficient와 전류모드 FFT(Fast Fourier Transform) LSI의 회전인자(twiddle factor)를 실현시키기 위해서는 높은 정밀도를 갖는 전류 감쇠 회로가 필요하게 된다. 본 논문은 전류 모드 신호처리 기술에서 전류감쇠 회로의 감쇠 정밀도를 향상시킬 수 있는 기술을 소개하고자한다. 먼저 게이트 길이 비율을 조정하는(gate-ratioed) Current Mirror 회로를 사용하는 기존의 전류 감쇠 조정회로에 있어서의 DC offset 전류 에러에 대하여 분석하였으며, 다음으로 DC offset 전류 에러를 제거할 수 있는 전류감쇠 회로를 제안하였다. 회로 구성은 입력 전류를 1/N로 감쇠시킬 수 있도록 N개의 Current Mirror를 병렬로 연결하는 기본 구성을 하였으며, Kirchhoff 전류 법칙에 근거하여, 전류 감쇠가 결정되도록 설계하였다. 또한 Current Mirror 회로에서, 정전류원의 사용을 줄일 수 있는 회로설계를 제안하였다. 제안된 전류 감쇠 회로에서 정밀도는 Current Mirror의 ac 이득 에러에 의하여 제한되며 High Swing Current Mirror를 기본 Current Mirror로 사용한 경우에, 최대 정밀도는 이론상 입력 전류의 -80[dB]까지 실현가능하다.