• Journal of the Korean Ceramic Society
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• v.52 no.4
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• pp.290-293
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• 2015

The properties of the IZTO thin films on the glass were studied with a variation of the $SiO_2$ buffer layer thickness. $SiO_2$ buffer layers were deposited by plasma-enhanced chemical vapor deposition (PECVD) on the glass, and the In-Zn-Tin-Oxide (IZTO) thin films were deposited on the buffer layer by RF magnetron sputtering. All the IZTO thin films with the $SiO_2$ buffer layer are shown to be amorphous. Optimum $SiO_2$ buffer layer thickness was obtained through analyzing the structural, morphological, electrical, and optical properties of the IZTO thin films. As a result, the IZTO surface roughness is 0.273 nm with a sheet resistance of $25.32{\Omega}/sq$ and the average transmittance is 82.51% in the visible region, at a $SiO_2$ buffer layer thickness of 40 nm. The result indicates that the uniformity of surface and the properties of the IZTO thin film on the glass were improved by employing the $SiO_2$ buffer layer and the IZTO thin film can be applied well to the transparent conductive oxide for display devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.454-455
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• 2009

Selective emitter structure have an important research subject for crystalline silicon solar cells because it is used in production for high efficiency solar cells. A selective emitter structure with highly doped regions underneath the metal contacts is widely known to be one of the most promising high-efficiency solution in solar cell processing. Since most of the selective emitter processes require expensive extra masking and double steps process. Formation of selective emitters is not cost effective. One method that satisfies these requirements is the method of screen-printing with a phosphorus doping paste. In this paper we researched two groups of selective emitter structure process. One was using dopant paste, and the other was using solid source, in order to compare their uniformity, sheet resistance and performance condition time.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1257-1260
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• 2007

A single-wall carbon nanotube (SWNT) transparent conductive film (TCF) was fabricated using a simple inkjet printing method. The TCF could be selectively patterned by controlling the dot size to diameters as small as $34\;{\mu}m$. In this repeatable and scalable process, we achieved 71% film transmittance and a resistance of 900 ohm/sq sheet with an excellent uniformity, about ${\pm}\;5%$ deviation overall. Inkjet printing of SWNT is substrate friendly and the TCF is printed on a flexible substrate. This method of fabrication using direct printing permits mass production of TCF in a large area process, reducing processing steps and yielding low-cost TCF fabrications on a designated area using simple printing.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.501-504
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• 2006

The Process technology for uniform SLS poly-Si and performance enhancement of furnace activated poly-Si TFTs are reported. By strictly optimizing SLS optics, threshold voltage variation in pixel TFTs was remarkably decreased and the non-uniformity such as SLS shot mark was removed. Optimized doping process for low sheet resistance and passivation annealing are critical for the enhancement of device performances.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1402-1405
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• 2006

Using a indium zinc oxide (IZO) alloy target with a ratio of 90:10 in wt%, highly transparent conducting oxide (TCO) thin films are prepared on polyethersulfone (PES) substrates by lowfrequency (LF) magnetron sputtering system. These films have amorphous structures with excellent electrical stability, surface uniformity and high optical transmittance. Experiments were carried out as a function of applied voltage. At optimal deposition conditions, thin films of IZO with a sheet resistance of 29 ohm/sq. and an optical transmission of over 82 % in the visible spectrum range were achieved. The IZO thin films fabricated by this method do not require substrate heating during the film preparation or any additional post-deposition annealing treatment.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.525-528
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• 2006

Transparent conducting films were fabricated on polyethylene terephthalate substrate by a spray method using double-walled carbon nanotubes dispersed in organic solvent and water-based solution. We analyzed the films by absorption spectra, sheet resistance, and scanning electron microscopy. Transparent conducting films with high uniformity and high transparency were fabricated by the spray method. We found that the dispersion particularly nanodispersion of CNTs was of crucial importance to improve the film performance.

• Journal of the Semiconductor & Display Technology
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• v.11 no.2
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• pp.1-6
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• 2012

In this study, a high performance rotary magnet type magnetron source for roll-to-roll sputter system has been developed. We analyzed the density of magnetic field as a function of size variation of the magnet which are in the center and edge of the target. The target efficiency showed the best result when the width of center magnet, the width of edge magnet, the angle of edge magnet, and the rotation angle of Yoke are 20mm, 10mm, $56^{\circ}$, and $16^{\circ}$, respectively. On the basis of the results of magnet array, Roll-to Roll magnetron source was fabricated and tested. The uniformity of the film thickness and that of the sheet resistance was ${\pm}1.62%$ and ${\pm}4.13%$, and the resistivity was $2.79{\times}10^{-3}W{\cdot}cm$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.2
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• pp.99-104
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• 2021

Ion-beam sputtering (IBS) was used to deposit semiconducting IZTO (indium zinc tin oxide) thin films onto heavily-doped Si substrates using a sintered ceramic target with the nominal composition In0.4Zn0.5Sn0.1O1.5, which could work as a channel layer for oxide TFT (oxide thin film transistor) devices. The crystallization behavior and electrical properties were examined for the films in terms of deposition parameters, i.e. target tilt angle and substrate temperature during deposition. The thickness uniformity of the films were examined using a stylus profilometer. The observed difference in electrical properties was not related to the degree of crystallization but to the deposition temperature which affected charge carrier concentration (n), electrical resistivity (ρ), sheet resistance (Rs), and Hall mobility (μH) values of the films.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.12
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• pp.1-9
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• 2003

In this paper, a novel Ni silicide technology with Cobalt interlayer and Titanium Nitride(TiN) capping layer for sub 100 nm CMOS technologies is presented, and the device parameters are characterized. The thermal stability of hi silicide is improved a lot by applying co-interlayer at Ni/Si interface. TiN capping layer is also applied to prevent the abnormal oxidation of NiSi and to provide a smooth silicidc interface. The proposed NiSi structure showed almost same electrical properties such as little variation of sheet resistance, leakage current and drive current even after the post silicidation furnace annealing at $700^{\circ}C$ for 30 min. Therefore, it is confirmed that high thermal robust Ni silicide for the nano CMOS device is achieved by newly proposed Co/Ni/TiN structure.

• Current Photovoltaic Research
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• v.3 no.3
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• pp.101-105
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• 2015

ZnO is gathering great interest for large square optoelectrical devices of flat panel display (FHD) and solar cell as a transparent conductive oxide (TCO). Herewith, Mg and IIIA (Al, In) co-doped ZnO films were prepared on SLG substrate using RF magnetron sputtering system. The effect of variation of atomic weight % of Mg and ZnO have been investigated. The atomic weight % Al and In are of 3% and kept constant throughout. The numbers of samples were prepared according to their different contents, which are $M_{3%}AZO_{94%}$, $M_{4%}AZO_{93%}-(MAZO)$ and $M_{3%}IZO_{94%}$, $M_{4%}IZO_{93%}-(MIZO)$ respectively. A RF power of 225 W and working pressure of 6 m Torr was used for the deposition at $300^{\circ}C$. All of the two thin film show good uniformity in field emission scanning electron microscopy image. $M_{3%}AZO_{94%}$ thin film shows overall better performance among the all. The film shows the best lowest resistivity, carrier concentration, mobility and Sheet resistance and is found to be are of $8.16{\times}10^{-4}{\Omega}cm$, $4.372{\times}10^{20}/cm^3$, $17.5cm^2/vs$ and $8.9{\Omega}/sq$ respectively. Also $M_{3%}AZO_{94%}$ thin film shows the relatively high optical band gap energy of 3.7 eV with high transmittance more than 80% in visible region required for the better solar cell performance.