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Novel Ni-Silicide Structure Utilizing Cobalt Interlayer and TiN Capping Layer and its Application to Nano-CMOS  

오순영 (충남대학교 전자공학과)
윤장근 (충남대학교 전자공학과)
박영호 (충남대학교 전자공학과)
황빈봉 (충남대학교 전자공학과)
지희환 (충남대학교 전자공학과)
왕진석 (충남대학교 전자공학과)
이희덕 (충남대학교 전자공학과)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.40, no.12, 2003 , pp. 1-9 More about this Journal
Abstract
In this paper, a novel Ni silicide technology with Cobalt interlayer and Titanium Nitride(TiN) capping layer for sub 100 nm CMOS technologies is presented, and the device parameters are characterized. The thermal stability of hi silicide is improved a lot by applying co-interlayer at Ni/Si interface. TiN capping layer is also applied to prevent the abnormal oxidation of NiSi and to provide a smooth silicidc interface. The proposed NiSi structure showed almost same electrical properties such as little variation of sheet resistance, leakage current and drive current even after the post silicidation furnace annealing at $700^{\circ}C$ for 30 min. Therefore, it is confirmed that high thermal robust Ni silicide for the nano CMOS device is achieved by newly proposed Co/Ni/TiN structure.
Keywords
SALICIDE; TiN capping; Co-interlayer; Nano CMOS; NiSi;
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1 이헌진, 지희환, 배미숙, 안순의, 박성형, 이기민, 이주형, 왕진석, 이희덕, '100nm 이하의 CMOS소자를 위한 Ni Silicide Technology', 대한 전자공학회, 하계학술대회 논문집, Vol.2, p.237, 2002   과학기술학회마을
2 S. P. Muraka, 'Self-aligned silicides or metals for very large integrated circuit applications', Journal of Vacuum Science and Technology B4,pp. 1325-1331, 1986   DOI
3 Chel-Jong CHOI, Young-Woo OK, Tae-Yeon SEONG, Hi-Deok LEE, 'Effects of a $SiO_2$ Capping Layer on the Electrical Properties and Morphology fo Nickel Silicides', J. Appl. Phys, Vol. 41, pp.1-5, 2002   DOI
4 K. Gato, A. Fushida, J. Watanabe, T. Sukegawa, K. Ka wa mura, T. Yamazaki, T. Sugii, 'Leakage mechanism and optimized conditions of Co salicide process for deep-submicronMOS devices', IEDM 95, pp.449-452, 1995   DOI
5 J. Chen, J. P. Colinge, D. Flandre, R.Gillon, J. P. Raskin, and D. Vanhoe nacker, 'Comparison of $TiSi_2$, $CoSi_2$ and NiSi for Thin-Film Silicon-on-Insulator Applications', J. Elec-trochem Soc., Vol.144, No.7, 1997   DOI
6 E. G. Colgan, J. P. Gambino, 'Formation and stability of silicides onsilicon', Material Science & Engineering, Review Reports, Vol. R16, No.2, pp. 43-96, 1996   DOI   ScienceOn
7 F. Deng, R. A. Johnson, W. B. Dubbelday, G. A. Garcia ,P. M. Asbeck, S. S. Lau, 'Salicide process for 400 A fully-depleted SOI-MOSFETs using NiSi', SOI Conference Proceedings, IEEE International, pp.22-23, 1997   DOI
8 T. Morimoto, T. Ohguro, H. S. Momose, T. Iinuma, et al, 'Self - Aligned Nickel - Mono - Silicide Technology for High-speed Deep Submicro meter Logic CMOS ULSI', IEEE Trans. Electron Devices, Vol.42, No.5, pp. 915-922, 1995   DOI   ScienceOn
9 T. Morimoto, H. S. Momose, T. Iinuma, I. Kunishima, K. Suguro, H.Okana, I. Katakabe, H. Nakajima, M. Tsuchiaki, M. Ono, Y. Katsumata and H. Iwai, 'A NiSi salicide technology for advanced logic devices', Tech. Dig. ofIEDM, pp.653-656, 1991   DOI
10 D. Z. Chi, D. Mangelinck, S. K. Lahiri, P. S. Lee and K. L. Pey, 'Comparative study of current-voltage characteristics of Ni and Ni (Pt)-alloy silicided p+n diodes', Appl, Phys, Lett. 78, p.3256, 2001   DOI   ScienceOn
11 M. A. Nicolet and S. S. Lau, 'Formation and characterization of transition-metal silicides', VLSI Electronics Microstructure Science, vol.6, Chapter 6, Academic Press, p.457, 346, 358, 1983
12 T. H. Hou, T. F. Lei and T. S. Chao, 'Im-provement of junction leakage of nickel silicided junction by a Ti-capping layer', IEEE Electron Device Lett., 20, p.572, 1999   DOI   ScienceOn
13 T. Ohguro, et al. Iwai, 'Nitrogen-doped nickel monosilicide technology for deep submicron CMOS salicide', in IEDM Tech. Dig., p. 453, 1995   DOI
14 C. detavernier, R. L. Van Meirhaneghe, F. Cardon, R. A. Donaton, K. Maex, 'The influence of Ti capping layers on $CoSi_2$ formation', Miicroelectronic Engineering 50, pp. 125-132, 2000   DOI   ScienceOn
15 Hong-Xiang Mo, Xin-Ping Qu, Jian-Hai Liu, Guo-Ping Ru, Bing-Zong Li, 'Formation and properties of ternary silicide (CoxNil-x) $Si_2$ thin films', Solid-State and Integrated Circuit Technology, Proceedings. 5th International pp. 271-274, 1998   DOI