References
- S. P. Muraka, 'Self-aligned silicides or metals for very large integrated circuit applications', Journal of Vacuum Science and Technology B4,pp. 1325-1331, 1986 https://doi.org/10.1116/1.583514
- 이헌진, 지희환, 배미숙, 안순의, 박성형, 이기민, 이주형, 왕진석, 이희덕, '100nm 이하의 CMOS소자를 위한 Ni Silicide Technology', 대한 전자공학회, 하계학술대회 논문집, Vol.2, p.237, 2002
-
Chel-Jong CHOI, Young-Woo OK, Tae-Yeon SEONG, Hi-Deok LEE, 'Effects of a
$SiO_2$ Capping Layer on the Electrical Properties and Morphology fo Nickel Silicides', J. Appl. Phys, Vol. 41, pp.1-5, 2002 https://doi.org/10.1143/JJAP.41.1 - K. Gato, A. Fushida, J. Watanabe, T. Sukegawa, K. Ka wa mura, T. Yamazaki, T. Sugii, 'Leakage mechanism and optimized conditions of Co salicide process for deep-submicronMOS devices', IEDM 95, pp.449-452, 1995 https://doi.org/10.1109/IEDM.1995.499235
- E. G. Colgan, J. P. Gambino, 'Formation and stability of silicides onsilicon', Material Science & Engineering, Review Reports, Vol. R16, No.2, pp. 43-96, 1996 https://doi.org/10.1016/0927-796X(95)00186-7
- F. Deng, R. A. Johnson, W. B. Dubbelday, G. A. Garcia ,P. M. Asbeck, S. S. Lau, 'Salicide process for 400 A fully-depleted SOI-MOSFETs using NiSi', SOI Conference Proceedings, IEEE International, pp.22-23, 1997 https://doi.org/10.1109/SOI.1997.634913
- T. Morimoto, T. Ohguro, H. S. Momose, T. Iinuma, et al, 'Self - Aligned Nickel - Mono - Silicide Technology for High-speed Deep Submicro meter Logic CMOS ULSI', IEEE Trans. Electron Devices, Vol.42, No.5, pp. 915-922, 1995 https://doi.org/10.1109/16.381988
- T. Morimoto, H. S. Momose, T. Iinuma, I. Kunishima, K. Suguro, H.Okana, I. Katakabe, H. Nakajima, M. Tsuchiaki, M. Ono, Y. Katsumata and H. Iwai, 'A NiSi salicide technology for advanced logic devices', Tech. Dig. ofIEDM, pp.653-656, 1991 https://doi.org/10.1109/IEDM.1991.235387
-
J. Chen, J. P. Colinge, D. Flandre, R.Gillon, J. P. Raskin, and D. Vanhoe nacker, 'Comparison of
$TiSi_2$ ,$CoSi_2$ and NiSi for Thin-Film Silicon-on-Insulator Applications', J. Elec-trochem Soc., Vol.144, No.7, 1997 https://doi.org/10.1149/1.1837833AdditionalInformation - M. A. Nicolet and S. S. Lau, 'Formation and characterization of transition-metal silicides', VLSI Electronics Microstructure Science, vol.6, Chapter 6, Academic Press, p.457, 346, 358, 1983
- T. H. Hou, T. F. Lei and T. S. Chao, 'Im-provement of junction leakage of nickel silicided junction by a Ti-capping layer', IEEE Electron Device Lett., 20, p.572, 1999 https://doi.org/10.1109/55.798047
- D. Z. Chi, D. Mangelinck, S. K. Lahiri, P. S. Lee and K. L. Pey, 'Comparative study of current-voltage characteristics of Ni and Ni (Pt)-alloy silicided p+n diodes', Appl, Phys, Lett. 78, p.3256, 2001 https://doi.org/10.1063/1.1374496
- T. Ohguro, et al. Iwai, 'Nitrogen-doped nickel monosilicide technology for deep submicron CMOS salicide', in IEDM Tech. Dig., p. 453, 1995 https://doi.org/10.1109/IEDM.1995.499236
-
C. detavernier, R. L. Van Meirhaneghe, F. Cardon, R. A. Donaton, K. Maex, 'The influence of Ti capping layers on
$CoSi_2$ formation', Miicroelectronic Engineering 50, pp. 125-132, 2000 https://doi.org/10.1016/S0167-9317(99)00272-5 -
Hong-Xiang Mo, Xin-Ping Qu, Jian-Hai Liu, Guo-Ping Ru, Bing-Zong Li, 'Formation and properties of ternary silicide (CoxNil-x)
$Si_2$ thin films', Solid-State and Integrated Circuit Technology, Proceedings. 5th International pp. 271-274, 1998 https://doi.org/10.1109/ICSICT.1998.785872