• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• Korean Journal of Optics and Photonics
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• v.33 no.2
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• pp.67-73
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• 2022

In a head-mounted display (HMD) for virtual-reality applications, a narrow viewing angle is preferred to the usual, wide viewing angle because the HMD is positioned close in front of the user's eyes, and the display position is fixed. In this paper, we propose a new back-light unit (BLU) for implementing a narrow viewing angle, which is suitable for a HMD. By optimizing the scattering patterns in the light-guide-plate and inverse-prism structures, the viewing angle and correlations between structural parameters in the BLU components are analyzed with ray-tracing simulations. As a result, a double-angle inverse-prism structure incorporating the scattering patterns of a light-guide plate is chosen, which results in a 14% increase in center luminance, a 16% decrease in the vertical viewing angle, and a light efficiency of up to 70%, compared to a conventional BLU. Thus, the new BLU system is expected to be applied in a high-efficiency liquid crystal display.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2022.05a
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• pp.27-30
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• 2022

The plasma process, which has many advantages in terms of efficiency and environment compared to conventional process methods, is widely used in semiconductor manufacturing. Plasma Sheath is a dark region observed between the plasma bulk and the chamber wall surrounding it or the electrode. The Plasma Sheath Monitoring Sensor (PSMS) measures the difference in voltage between the plasma and the electrode and the RF power applied to the electrode in real time. The PSMS data, therefore, are expected to have a high correlation with the state of plasma in the plasma chamber. In this study, a model for predicting the state of nitrogen ions in the plasma chamber is training by a deep learning machine learning techniques using PSMS data. For the data used in the study, PSMS data measured in an experiment with different power and pressure settings were used as training data, and the ratio, flux, and density of nitrogen ions measured in plasma bulk and Si substrate were used as labels. The results of this study are expected to be the basis of artificial intelligence technology for the optimization of plasma processes and real-time precise control in the future.

• Journal of Korean Society of Environmental Engineers
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• v.35 no.5
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• pp.356-362
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• 2013

An attempt has been made to optimize elongated rotating arc plasma $NH_3$ scrubber. Among diverse semiconductor processes, diffusion and implantation process inevitably produce $NH_3$ as byproduct and efficient dry process for the decomposition of $NH_3$ is required. Plasma process does not produce NOx that is commonly produced in combustion process and there is no problem of deactivation, usually experienced in catalyst process. However, plasma process uses electrical energy and needs to be optimized to achieve feasibility of application. In this work, mode control of rotating arc is presented as tentative solution for the possible optimization of the process. Based on existing rotating arc, scale-up and following mode mapping was tried. Proposed reactor design was evaluated in the $NH_3$ decomposition process and revealed that optimization scheme is at hand. In the experiment of full scale scrubber including heat exchanger, the process gave more stable and efficient process of $NH_3$ decomposition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.6
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• pp.675-679
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• 2024

Wide bandgap (WBG) devices, especially SiC, are gaining traction as materials for high-power EV conversion devices due to their superior efficiency and switching capabilities compared to Si-based power devices. SiC allows for high power, high temperature, and high frequency applications because of its outstanding thermal conductivity, saturation velocity, and dielectric breakdown field. SiC-based MPS diodes combine the advantages of SiC-based SBDs and PiN diodes, allowing high-frequency switching operation with low leakage currents under high voltage conditions. However, MPS diodes exhibit snapback phenomena influenced by the P⁺ region's size, necessitating optimization. A TCAD simulation studied the impact of the P⁺ region's depth and width on MPS diode performance. Increasing the P⁺ width raised the On-specific resistance (R_on,sp) and lowered the maximum voltage during snapback (V_snap). Increasing the depth decreased both Breakdown voltage (BV) and V_snap. A trade-off between the semiconductor performance index BFOM and V_snap was identified, leading to optimized dimensions. The optimized MPS diode shows a low V_snap of about 3.89 V and a high BFOM of 1.72 GW·cm², highlighting its potential as a next-generation high-performance power conversion device.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.508-517
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• 2014

We design and analyze the n-channel junctionless fin-shaped field-effect transistor (JL FinFET) with 10-nm gate length and compare its performances with those of the conventional bulk-type fin-shaped FET (conventional bulk FinFET). A three-dimensional (3-D) device simulations were performed to optimize the device design parameters including the width ($W_{fin}$) and height ($H_{fin}$) of the fin as well as the channel doping concentration ($N_{ch}$). Based on the design optimization, the two devices were compared in terms of direct-current (DC) and radio-frequency (RF) characteristics. The results reveal that the JL FinFET has better subthreshold swing, and more effectively suppresses short-channel effects (SCEs) than the conventional bulk FinFET.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.4 s.334
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• pp.61-68
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• 2005

A chip, which can fast encoder the audio data to AAC (Advanced Audio Coding) LC(Low Complexity) that is MPEG-2 audio standard, has been designed on the basis of a 32 bits DSP core and fabricated with 0.25um CMOS technology. At first, the various optimization methods for implementing the algerian are devised to reduce the memory size and calculation cycles. FFT(Fast Fourier Transform) hardware block is added to the DSP core to get the more reduction of the calculation cycles. The chips has the size of $7.20\times7.20 mm^2$ and about 830,000 equivalent gates, can carry out AAC encoding under 70MIPS(Million Instructions per Second).

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.261-269
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• 2016

A high-performance transmit/receive (T/R) switch is essential for every radio-frequency (RF) device. This paper proposes a T/R switch that is designed in the CEDEC 0.13 μm complementary metal-oxide-semiconductor (CMOS) technology for 2.4 GHz ISM-band RF applications. The switch exhibits a 1 dB insertion loss, a 28.6 dB isolation, and a 35.8 dBm power-handling capacity in the transmit mode; meanwhile, for the 1.8 V/0 V control voltages, a 1.1 dB insertion loss and a 19.4 dB isolation were exhibited with an extremely-low power dissipation of 377.14 μW in the receive mode. Besides, the variations of the insertion loss and the isolation of the switch for a temperature change from - 25℃ to 125℃ are 0.019 dB and 0.095 dB, respectively. To obtain a lucrative performance, an active inductor-based resonant circuit, body floating, a transistor W/L optimization, and an isolated CMOS structure were adopted for the switch design. Further, due to the avoidance of bulky inductors and capacitors, a very small chip size of 0.0207 mm² that is the lowest-ever reported chip area for this frequency band was achieved.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.66 no.4
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• pp.188-193
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• 2017

In this paper, a ZVS-PWM high-frequency inverter with a PWM control function is applied to commercial system 220[Vrms], and a resonator type ZVS-PWM high-frequency inverter circuit with a fixed-two methods were proposed. The parameters of the transformer model equivalent circuit of a copier fixing device, which is an essential element in the parameter optimization of the proposed circuit, are obtained by using a high-frequency amplifier and its frequency characteristics are described. The proposed method compared to the existing single-ended ZVS-PFM high frequency inverter can suppress the voltage and current peak value of the power semiconductor switching device and reduce the switching loss. The efficiency of the proposed method itself is 98[%] at rated power output. Also, the efficiency of 96[%] can be obtained even at low output, so that the proposed high frequency inverter is very efficient inverter. The total efficiency from the commercial AC input to the inverter output is 93[%] at rated, which is considered efficient for use in copying machines. In addition, the diode bridge loss accounts for the largest portion of the overall system efficiency distribution. On the other hand, the nonparallel filter has a very low loss.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.39 no.2
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• pp.119-124
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• 2015

Numerical study on the new design of the liquid mass flow meter in infinitesimal flow rate for semiconductor production is performed. The heater and thermistor are wired on the circular tube about 0.3mm inner diameter with designed gap between them. After the time interval from the single pulse heating the thermistor reaches its peak temperature and this time interval is almost inversely proportional to the liquid mass flow rate. The axial conduction in tube wall and convection through the flow is combined. As a result, the peak temperature moving velocity is much smaller than flow mean velocity and there is no linear relationship between them. In this study, the effects of design parameters such as the tube inner/outer diameter, wired heater width, and the gap between heater and thermistor are investigated and the trends of optimization in these parameters are discussed.