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http://dx.doi.org/10.4313/TEEM.2016.17.5.261

Design of an Active Inductor-Based T/R Switch in 0.13 μm CMOS Technology for 2.4 GHz RF Transceivers  

Bhuiyan, Mohammad Arif Sobhan (Department of Electrical, Electronic and Systems Engineering, Universiti Kebangsaan Malaysia)
Reaz, Mamun Bin Ibne (Department of Electrical, Electronic and Systems Engineering, Universiti Kebangsaan Malaysia)
Badal, Md. Torikul Islam (Department of Electrical, Electronic and Systems Engineering, Universiti Kebangsaan Malaysia)
Mukit, Md. Abdul (Department of Electrical, Electronic and Systems Engineering, Universiti Kebangsaan Malaysia)
Kamal, Noorfazila (Department of Electrical, Electronic and Systems Engineering, Universiti Kebangsaan Malaysia)
Publication Information
Transactions on Electrical and Electronic Materials / v.17, no.5, 2016 , pp. 261-269 More about this Journal
Abstract
A high-performance transmit/receive (T/R) switch is essential for every radio-frequency (RF) device. This paper proposes a T/R switch that is designed in the CEDEC 0.13 μm complementary metal-oxide-semiconductor (CMOS) technology for 2.4 GHz ISM-band RF applications. The switch exhibits a 1 dB insertion loss, a 28.6 dB isolation, and a 35.8 dBm power-handling capacity in the transmit mode; meanwhile, for the 1.8 V/0 V control voltages, a 1.1 dB insertion loss and a 19.4 dB isolation were exhibited with an extremely-low power dissipation of 377.14 μW in the receive mode. Besides, the variations of the insertion loss and the isolation of the switch for a temperature change from - 25℃ to 125℃ are 0.019 dB and 0.095 dB, respectively. To obtain a lucrative performance, an active inductor-based resonant circuit, body floating, a transistor W/L optimization, and an isolated CMOS structure were adopted for the switch design. Further, due to the avoidance of bulky inductors and capacitors, a very small chip size of 0.0207 mm2 that is the lowest-ever reported chip area for this frequency band was achieved.
Keywords
CMOS; ISM band; SPDT; T/R switch; Transceiver;
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