• Nuclear Engineering and Technology
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• v.56 no.2
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• pp.451-462
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• 2024

In order to optimize the operational safety and reliability of the upper launcher for the CFETR ECRH system, a design of the launcher based on the remote steering concept is currently being carried out for comparison with the front steering equivalent. This paper presents the remote steering system's conceptual design and simulation analysis. A Square Corrugated Waveguide (SCW) of 65 × 65 mm has been designed with an optimized length of 9.35 m. By changing the relative length of the waveguide, the transmission efficiency of the SCW is optimized within the range of steering angles ±12°. Different error factors are investigated in detail, and corresponding acceptable error ranges are provided. Considering these error factors and ignoring ohmic losses and thermal effects, the relative transmission efficiency of the SCW is estimated to be >98 % within the steering angle range. A matching steering unit for the SCW is designed, which consists of an ellipsoidal focusing mirror and a steerable flat mirror. The detailed design of the steerable mirror motion trajectory is presented. Also, the influence of the possible beam incident errors caused by the steering unit on the transmission efficiency is analyzed in detail.

• Proceedings of the Korean Vacuum Society Conference
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• 2004.08a
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• pp.230-230
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• 2004

• Journal of the Korean institute of surface engineering
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• v.41 no.4
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• pp.134-141
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• 2008

We have developed a numerical model for a remote ICP(inductively coupled plasma) system in 2D and 3D with gas distribution configurations and confirmed it by plasma diagnostics. The ICP source has a Cu tube antenna wound along a quartz tube driven by a variable frequency rf power source($1.9{\sim}3.2$ MHz) for fast tuning without resort to motor driven variable capacitors. We investigated what conditions should be met to make the plasma remotely localized within the quartz tube region without charged particles' diffusing down to a substrate which is 300 mm below the source, using the numerical model. OES(optical emission spectroscopy), Langmuir probe measurements, and thermocouple measurement were used to verify it. To maintain ion current density at the substrate less than 0.1 $mA/cm^2$, two requirements were found to be necessary; higher gas pressure than 100 mTorr and smaller rf power than 1 kW for Ar.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.171-174
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• 1994

The drive towards ultra-large-scale integrated circuits a continuous intermetal dielectric films for multi layer interconection. Optimum condition of remote plasma enhanced chemical vapour deposition(RPECVD) was achieved by orthogonal array method. Chracteristics of SiO$_2$ films deposited by using remote PECVD with N$_2$O gas were investigated. Etching rate of SiO$_2$ films in P-echant was about 6[A/s] that was the same as the thermal oxide. The films a showed high breakdown voltage of 7(MV/cm) and a resistivity of Bx10$\^$13/[$\Omega$cm] at 7(MV/cm). The interface Trap density of SiO$_2$ has been shown excel lent properties of 5x10$\^$10/[/$\textrm{cm}^2$eV]. It was observed that the dielectric constant dropped to a value of 4. 29 for 150 [W] RF power.

• Applied Chemistry for Engineering
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• v.20 no.5
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• pp.536-541
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• 2009

Plasma-polymerized acrylic acid films were deposited on Si wafer and KBr pellet by remote plasma-enhanced chemical vapor deposition (PECVD). Effects of plasma power, reaction pressure, indirect plasma method on the growth rate, chemical structure, and chemical bonding state of the films were investigated. Chemical structure and chemical state of the films were characterized by Fourier transformed infrared (FT-IR) spectroscopy and X-ray photoelectron spectroscopy (XPS) analysis and curve fitting technique. Growth rate of the film increased to a saturation value with plasma power of 100 W, but showed the maximum with reaction pressure at 300 mtorr. Whenever W/FM factor (applied energy per gas molecule) increased by increasing plasma power or lowering pressure, the fragmentation of acrylic acid molecules was promoted. From the XPS curve fitting analyses, we found that the intensity of carboxyl COO bonding peak decreased with W/FM factor, and the tendency of intensity change of carboxylic COO peak was contrary to those of ether C-O and carbonyl C=O peaks.

• Proceedings of the Korean Vacuum Society Conference
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• 2004.02a
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• pp.170-170
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• 2004

• Polymer(Korea)
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• v.35 no.2
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• pp.136-140
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• 2011

The plasma resistances of nitrile curable perfluoro elastomer (NT PFE) and peroxide curable PFE (PO PFE) after exposing to $NF_3$ and $O_2$ remote plasmas were investigated by analyzing weight loss and morphology of O-ring made of PFE. The compounds were designed following the typical formulations of O-ring/seal which were applied in semiconductor and LCD production site. They were blended by an open roll mill, and then, O-ring was finally made by hot press molding and oven curing. The weight loss was calculated and morphology was observed for each atmosphere and temperature by a digital weighing machine and SEM. As results, it was confirmed the weight loss and related morphology were meaningfully different according to the cure type of PFE, filler system, and the species of remote plasma.

• Nuclear Engineering and Technology
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• v.53 no.8
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• pp.2708-2715
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• 2021

The Multi-Purpose Overload Robot (CMOR) is a key subsystem of China Fusion Engineering Test Reactor (CFETR) remote handling system. Due to the long cantilever and large loads of the CMOR, it has a large rigid-flexible coupling deformation that results in a poor position accuracy of the end-effector. In this study, based on the Levenberg-Marquardt algorithm, the spatial grid, and the linearized variable load principle, a variable parameter compensation model was designed to identify the parameters of the CMOR's kinematics models under different loads and at different poses so as to improve the trajectory tracking accuracy. Finally, through Adams-MATLAB/Simulink, the trajectory tracking accuracy of the CMOR's rigid-flexible coupling model was analyzed, and the end position error exceeded 0.1 m. After the variable parameter compensation model, the average position error of the end-effector became less than 0.02 m, which provides a reference for CMOR error compensation.

• Korean Journal of Materials Research
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• v.8 no.8
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• pp.751-756
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• 1998

Effects of remote hydrogen plasma cleaning process parameters on the removal of Fe impurities on Si surfaces and the Fe removal mechanism were investigated. Fe removal efficiency is enhanced with decreasing the plasma exposure time and increasing the rf-power. The optimum plasma exposure time and rf-power are 1 min and 100W. respectively, in the range below 10 min and 100W. Fe removal efficiency is better under lower pressures than higher pressures, and the optimum $\textrm{H}_2$ flow rate was found to be 20 and 60sccm, respectively, under a low and a high pressure. The post-RHP(remote hydrogen plasma) annealing enhanced metallic contaminants removal efficiency, and the highest efficiency was achieved at $600^{\circ}C$. According to the AFM analysis results Si surface roughness was improved by 30-50%, which seems to be due to the removal of particles by the plasma cleaning. Also. Fe impurities removal mechanisms by remote hydrogen plasma are discussed.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.171-175
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• 1995

Optimum condition of remote plasma enhanced chemical vapor deposition using orthogonal array method was chosen. Characteristics of oxide films deposited by RPECVD with SiH$_{4}$ and N$_{2}$O gases were investigated. Etching rate of the optimized SiO$_{2}$ films in P-etchant was about 6[A/s] that was almost the same as that the high temperature thermal oxide. The films showed high dielectric breakdown field of more than 7[MV/cm] and a resistivity of 8*10$^{13}$ [.ohmcm] around at 7[MV/cm]. The interface trap density of SiO$_{2}$/Si interface around the midgap derived from the high frequency C-V curve was about 5*10$^{10}$ [/cm$^{2}$eV]. It was observed that the dielectric constant of the optimized SiO$_{2}$ film was 4.29.