Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Foramtion and Characterization of SiO$_2$ films made by Remote Plasma Enhanced Chemical vapour Deposition

Remote PECVD (RPECVD) SiO$_2$ 막의 형성 및 특성

  • 유병곤 (한국전자통신연구소 반도체연구단 공정장비연구부) ;
  • 구진근 (한국전자통신연구소 반도체연구단 공정장비연구부) ;
  • 임창완 (청주대학교 반도체공학과) ;
  • 김광호 (청주대학교 반도체공학과)
  • Published : 1994.11.01

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Abstract

The drive towards ultra-large-scale integrated circuits a continuous intermetal dielectric films for multi layer interconection. Optimum condition of remote plasma enhanced chemical vapour deposition(RPECVD) was achieved by orthogonal array method. Chracteristics of SiO$_2$ films deposited by using remote PECVD with N$_2$O gas were investigated. Etching rate of SiO$_2$ films in P-echant was about 6[A/s] that was the same as the thermal oxide. The films a showed high breakdown voltage of 7(MV/cm) and a resistivity of Bx10$\^$13/[$\Omega$cm] at 7(MV/cm). The interface Trap density of SiO$_2$ has been shown excel lent properties of 5x10$\^$10/[/$\textrm{cm}^2$eV]. It was observed that the dielectric constant dropped to a value of 4. 29 for 150 [W] RF power.

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