• 한국생산제조학회지
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• 제24권1호
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• pp.75-80
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• 2015

This paper proposes a selective electrodeposition process that uses laser masking and a DC voltage. Selective electrodeposition using laser masking and a DC voltage is more efficient than that using laser masking and a pulse voltage. In other words, electrodeposition with a DC voltage allows for precise selective deposition without the limitation of the deposition region. Also, a selective electrodeposition method that uses laser masking and DC voltage can reduce the electrodeposition time. The characteristics of a copper layer deposited by laser masking and DC voltage were examined under various conditions. A selective copper layer with various micro patterns of $2{\mu}m$ thickness was successfully fabricated.

• 한국재료학회지
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• 제24권2호
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• pp.105-110
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• 2014

The aim of this work was to investigate the effects of electrodeposition conditions on the microstructural characteristics of copper thin films. The microstructure of electroplated Cu films was found to be highly dependent on electrodeposition conditions such as system current and current density, as well as the bath solution itself. The current density significantly changed the preferred orientation of electroplated Cu films in a DC system, while the solution itself had very significant effects on microstructural characteristics in a pulse-reverse pulse current system. In the DC system, polarization at high current above 30 mA, changed the preferred orientation of Cu films from (220) to (111). However, Cu films showed (220) preferred orientation for all ranges of current density in the pulse-reverse pulse current system. The grain size decreased with increasing current density in the DC system while it remained relatively constant in the pulse-reverse pulse current system. The sheet resistance increased with increasing current density in the DC system due to the decreased grain size.

• Korean Chemical Engineering Research
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• 제52권1호
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• pp.26-39
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• 2014

전자 소자의 구리 금속 배선은 전해 도금을 포함한 다마신 공정을 통해 형성한다. 본 총설에서는 배선 형성을 위한 구리 전해 도금 및 수퍼필링 메카니즘에 대해 다루고자 한다. 수퍼필링 기술은 전해 도금의 전해질에 포함된 유기 첨가제의 영향에 의한 결과이며, 이는 유기 첨가제의 표면 덮임율을 조절하여 웨이퍼 위에 형성된 패턴의 바닥 면에서의 전해 도금 속도를 선택적으로 높임으로써 가능하다. 소자의 집적도를 높이기 위해 금속 배선의 크기는 계속적으로 감소하여 현재 그 폭이 수십 nm 수준으로 줄어들었다. 이러한 배선 폭의 감소는 구리 배선의 전기적 특성 감소, 신뢰성의 저하, 그리고 수퍼필링의 어려움 등 여러 가지 문제를 야기하고 있다. 본 총설에서는 상기 기술한 문제점을 해결하기 위해 구리의 미세 구조 개선을 위한 첨가제의 개발, 펄스 및 펄스-리벌스 전해 도금의 적용, 고 신뢰성 배선 형성을 위한 구리 기반 합금의 수퍼필링, 그리고 수퍼필링 특성 향상에 관한 다양한 연구를 소개한다.

• 마이크로전자및패키징학회지
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• 제16권4호
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• pp.49-53
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• 2009

MEMS 패키징용 hollow Cu 비아의 형성거동을 분석하기 위해, 펄스-역펄스 전류밀도 및 도금시간에 따른 hollow Cu 비아의 미세구조를 관찰하고 평균 두께 및 두께 편차를 측정하였다. 펄스-역펄스 전류밀도를 $-5\;mA/cm^2$와 $15\;mA/cm^2$로 유지하며 3시간 도금시 hollow Cu 비아의 평균 도금두께는 $5\;{\mu}m$이었으며 표준편차는 $0.63\;{\mu}m$이었다. 도금시간을 6시간으로 증가시 평균 도금두께는 $10\;{\mu}m$, 표준편차는 $1\;{\mu}m$로 균일한 두께의 hollow Cu 비아를 형성하는 것이 가능하였다. 펄스-역펄스 전류밀도를 $-10\;mA/cm^2$와 $30\;mA/cm^2$ 이상으로 증가시킨 경우에는 도금시간 증가에 따라 도금두께보다 도금두께의 표준편차가 더 크게 증가하여 균일한 hollow Cu 비아의 형성이 어려웠다.

• Journal of Welding and Joining
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• 제32권3호
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• pp.11-18
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• 2014

TSV(through silicon via) filling technology is making a hole in Si wafer and electrically connecting technique between front and back of Si die by filling with conductive metal. This technology allows that a three-dimensionally connected Si die can make without a large number of wire-bonding. These TSV technologies require various engineering skills such as forming a via hole, forming a functional thin film, filling a conductive metal, polishing a wafer, chip stacking and TSV reliability analysis. This paper addresses the TSV filling using Cu electrodeposition. The impact of plating conditions with additives and current density on electrodeposition will be considered. There are additives such as accelerator, inhibitor, leveler, etc. suitably controlling the amount of the additive is important. Also, in order to fill conductive material in whole TSV hole, current wave forms such as PR(pulse reverse), PPR(periodic pulse reverse) are used. This study about semiconductor packaging will be able to contribute to the commercialization of 3D TSV technology.

• Journal of Electrochemical Science and Technology
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• 제14권1호
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• pp.15-20
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• 2023

Ionic liquids are considered as a promising, alternative solvent for the electrochemical synthesis of metals because of their high thermal and chemical stability, relatively high ionic conductivity, and wide electrochemical window. In particular, their wide electrochemical window enables the electrodeposition of metals without any side reaction of electrolytes such as hydrogen evolution. The electrodeposition of silver is conducted in 1-n-butyl-3-methylimidazolium chloride ([C4mim]Cl) ionic liquid system with a silver source of AgCl. This study is the first attempt to electrodeposit silver nanoparticles without using co-solvents other than [C4mim]Cl. Pulse electrolysis is employed for the synthesis of silver nanoparticles by varying applied potentials from -3.0 V to -4.5 V (vs. Pt-quasi reference electrode) and pulse duration from 0.1 s to 0.7 s. Accordingly, the silver nanoparticles whose size ranges from 15 nm to ~100 nm are obtained. The successful preparation of silver nanoparticles is demonstrated regardless of the kinds of substrate including aluminum, stainless steel, and carbon paper in the pulse electrolysis. Finally, the antimicrobial property of electrodeposited silver nanoparticles is confirmed by an antimicrobial test using Staphylococcus aureus.

• 한국표면공학회지
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• 제36권2호
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• pp.161-167
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• 2003

In order to investigate the effects of pulse plating conditions on the electrodeposition of trivalent chromium, electroplating experiments from bath with low concentration of trivalent chromium were performed. The variation of current efficiency of chromium electroplating with the electroplating conditions was explained. The maximum current efficiency of pulse plating is 6.4 times as high as that of direct plating at the same mean current density The nodular size increased with pulse plating time and the pulse frequency.

• 한국표면공학회지
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• 제49권1호
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• pp.40-45
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• 2016

Recently, $Bi_2Te_3$-based alloys are the best thermoelectric materials near to room temperature, so it has been researched to achieve increased figure of merit(ZT). Ternary compounds such as Bi-Te-Se and Bi-Sb-Te have higher thermoelectric property than binary compound Bi-Te and Sb-Te, respectively. Compared to DC plating method, pulsed electrodeposition is able to control parameters including average current density, and on/off pulse time etc. Thereby the morphology and properties of the films can be improved. In this study, we electrodeposited n-type ternary Cu-doped $Bi_2(Te-Se)_3$ thin film by modified pulse technique at room temperature. To further enhance thermoelectric properties of $Bi_2(Te-Se)_3$ thin film, we optimized Cu doping concentration in $Bi_2(Te-Se)_3$ thin film and correlated it to electrical and thermoelectric properties. Thus, the crystal, electrical, and thermoelectric properties of electrodeposited $Bi_2(Te-Se)_3$ thin film were characterized the XRD, SEM, EDS, Seebeck measurement, and Hall effect measurement, respectively. As a result, the thermoelectric properties of Cu-doped $Bi_2(Te-Se)_3$ thin films were observed that the Seebeck coefficient is $-101.2{\mu}V/K$ and the power factor is $1412.6{\mu}W/mK^2$ at 10 mg of Cu weight. The power factor of Cu-doped $Bi_2(Te-Se)_3$ thin film is 1.4 times higher than undoped $Bi_2(Te-Se)_3$ thin film.

• 한국표면공학회지
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• 제35권3호
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• pp.158-164
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• 2002

Nanocomposites consisting of a nanocrystalline brass matrix (grain size ; 20-100nm) with sub-micron sized Al2O3 particles (60-200nm) were prepared by pulsed current electrodeposition. The microhardness of the nanocomposite with a grain size of 90-100nm was approximately 1.7 times higher than that of a comparable electrodeposit with no particles. However, significant variations in microhardness were not observed between the nanocomposites with grain sizes of 20 nm and the comparable electrodeposit.

• 한국표면공학회지
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• 제19권2호
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• pp.44-50
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• 1986

Effects of cathodic overvoltages on the electrodeposition of lead from electrolyte containing lead chloride, ammonium acetate and sodium succinate was investigated at 20$^{\circ}C$. The use of organic additives, phenol and gelatin was found effective to inhibit the growth of dendritic crystals. At the carthodic overvoltages higher than 0.2V, the lead deposit becames less compact even in the presence of organic additives. The applications of agitation and pulse current promoted compact and shiny deposits.