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http://dx.doi.org/10.5695/JKISE.2016.49.1.40

Study on Thermoelectric Properties of Cu Doping of Pulse-Electrodeposited n-type Bi2(Te-Se)3 Thin Films  

Heo, Na-Ri (Pusan National University, Department of Materials Science and Engineering)
Kim, Kwang-Ho (Pusan National University, Department of Materials Science and Engineering)
Lim, Jae-Hong (Korea Institute of Materials Science(KIMS), Surface Technology Division)
Publication Information
Journal of the Korean institute of surface engineering / v.49, no.1, 2016 , pp. 40-45 More about this Journal
Abstract
Recently, $Bi_2Te_3$-based alloys are the best thermoelectric materials near to room temperature, so it has been researched to achieve increased figure of merit(ZT). Ternary compounds such as Bi-Te-Se and Bi-Sb-Te have higher thermoelectric property than binary compound Bi-Te and Sb-Te, respectively. Compared to DC plating method, pulsed electrodeposition is able to control parameters including average current density, and on/off pulse time etc. Thereby the morphology and properties of the films can be improved. In this study, we electrodeposited n-type ternary Cu-doped $Bi_2(Te-Se)_3$ thin film by modified pulse technique at room temperature. To further enhance thermoelectric properties of $Bi_2(Te-Se)_3$ thin film, we optimized Cu doping concentration in $Bi_2(Te-Se)_3$ thin film and correlated it to electrical and thermoelectric properties. Thus, the crystal, electrical, and thermoelectric properties of electrodeposited $Bi_2(Te-Se)_3$ thin film were characterized the XRD, SEM, EDS, Seebeck measurement, and Hall effect measurement, respectively. As a result, the thermoelectric properties of Cu-doped $Bi_2(Te-Se)_3$ thin films were observed that the Seebeck coefficient is $-101.2{\mu}V/K$ and the power factor is $1412.6{\mu}W/mK^2$ at 10 mg of Cu weight. The power factor of Cu-doped $Bi_2(Te-Se)_3$ thin film is 1.4 times higher than undoped $Bi_2(Te-Se)_3$ thin film.
Keywords
Electrodeposition; $Bi_2(Te-Se)_3$; modified Pulse electrodeposition; Cu; Doping; n-type thin film;
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Times Cited By KSCI : 2  (Citation Analysis)
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1 Vining, C. B.,Semiconductors are cool Nature (2001) 577-578.
2 BOULANGER, C.,Thermoelectric Material Electroplating: a Historical Review ELECTRONIC MATERIALS 39 (2010) 1818-1827.   DOI
3 G. S Nolas, J. S., H. J. Goldsmid, Thermoelectrics Basic Principles and New Materials Developments. Springer-Verlag Berlin Heidelberg: 2001; Vol. 45 p VIII, 293.
4 Rama Venkatasubramanian, E. S., Thomas Colpitts & Brooks O'Quinn,Thin-film thermoelectric devices with high room-temperature figures of merit Nature 413 (2001) 597-602.   DOI
5 Arash Mehdizadeh Dehkordi, M. Z., Jian He, Terry M. Tritt Thermoelectric power factor: Enhancement mechanisms and strategies for higher performance thermoelectric materials Materials Science and Engingeering 97 (2015) 1-22.
6 Christian Schumacher, K. G. R., Raimar Rostek, Lewis Akinsinde, Svenja Baessler, Sebastian Zastrow, Geert Rampelberg, Peter Woias, Christophe Detavernier, Jose A. C. Broekaert, Julien Bachmann, Kornelius Nielsch Optimizations of Pulsed Plated p and n-type $Bi_2Te_3$-Based Ternary Compounds by Annealing in Different Ambient Atmospheres Adv. Energy Mater 3 (2013) 94-104.
7 Byungki Ryu, M.-W. O., Bong-Seo Kim, Ji Eun Lee, Sung-Jae Joo, Bok-Ki Min, HeeWoong Lee, Sudong Park,Prediction of Band Structure of $Bi_2Te_3$-related Binary and Ternary Thermoelectric Materials Journal of the Korean Physical Society 68 (2015) 115-133.
8 Mahan, J. E., Physical Vapor Deposition of Thin Films. Wiley-VCH 2000.
9 A. Al Bayaz, A. G., A. Foucaran, F. Pascal-Delannoy, A. Boyer,Electrical and thermoelectrical properties of $Bi_2Se_3$ grown by metal organic chemical vapour deposition technique Thin Solid Films 441 (2003) 1-5.   DOI
10 EASON, R., Pulsed Laser Deposition of Thin Films: Applications-Led Growth of Functional Materials. John Wiley & Sons: 2007.
11 Z. G. Zou, K. F. C., S. Chen, Z. Qin,Pulsed electrodeposition and characterization of $Bi_2Te_{3-y}Se_y$ films Materials Research Bulletin 47 (2012) 3292-3295.   DOI
12 Christian Schumacher, K. G. R., Lewis Akinsinde, Sebastian Zastrow, Sonja Heiderich, William Toellner, Geert Rampelberg, Christophe Detavernier, Jose A. C. Broekaert, Kornelius Nielsch, Julien Bachmann, Optimization of Electrodeposited p-Doped $Sb_2Te_3$ Thermoelectric Films by Millisecond Potentiostatic Pulses Adv. Energy Mater 2 (2012) 345-352.   DOI
13 In-Joon Yoo, Y. S., Dong Chan Lim, Nosang V. Myung, Kyu Hyoung Lee, Minju Oh, Dongyun Lee, Yang Do Kim, Seil Kim, Yong-Ho Choa, Joo Yul Lee, Kyu Hwan Lee, Jae-Hong Lim, Thermoelectric characteristics of $Sb_2Te_3$ thin films formed via surfactant-assisted electrodeposition Journal of Materials Chemistry A 1 (2013) 5430-5435.   DOI
14 Kyu Hyoung Lee, S.-M. C., Sang Il Kim, Jong Wook Roh, Dae Jin Yang, Weon Ho Shin, Hee Jung Park, Kimoon Lee, Sungwoo Hwang, Jeong Hoon Lee, Hyeona Mun, Sung Wng Kim,Doping effects on the thermoelectric properties of Cu-intercalated $Bi_2Te_{2.7}Se_{0.3}$ Current Applied Physics 15 (2015) 190-193.   DOI
15 J. Bludska, I. J., C. Drasar, P. Lost'ak, J. Horak Structural defects in Cu-doped $Bi_2Te_3$ single crystals Philosophical Magazine 87 (2007) 325-335.   DOI
16 Kyu Hyoung Lee, S. I. K., Hyeona Mun, Byungki Ryu, Soon-Mok Choi, Hee Jung Park, Sungwoo Hwang, Sung Wng Kim Enhanced thermoelectric performance of n-type $Cu_{0.008}Bi_2Te_{2.7}Se_{0.3}$ by band engineering Journal of Materials Chemistry C 3 (2015) 10604-10609.   DOI
17 Hilaal Alama, S. R.,A review on the enhancement of figure of merit from bulk to nano-thermoelectric materials Nano energy 2 (2013) 190-212.   DOI
18 Dario Narducci, E., Gianfranco Cerofolini, Stefano Frabboni, Giampiero Ottaviani, Impact ofenergy filtering and carrier localization on the thermoelectric properties of granularsemiconductors Journal of Solid State Chemistry 193 (2012) 19-25.   DOI
19 M. Jonson, G. D. M.,Mott's formula for the thermopower and the Wiedemann-Franz law Physical review B 21 (1980) 4223-4229.   DOI