• Korean Journal of Metals and Materials
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• v.47 no.11
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• pp.748-753
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• 2009

The surface morphology and the surface roughness of n-type SiC induced by wet-treatment using 45% KOH and buffered oxide etchant (BOE-1HF : $6H_2O$) were investigated by atomic force microscopy (AFM). While Si-face of SiC could be etched by alkali solutions such as KOH, acidic solutions such as BOE were hardly able to etch SiC. When the rough SiC samples were used, the surface roughness of etched sample was decreased after wet-treatment regardless of etchant, due to the planarization the of surface by widening of scratches formed by mechanical polishing. It was observed that the initial etching was affected by the energetically unstable sites, such as dangling bond and steps. However, when a relatively smooth sample was used, the surface roughness was rapidly increased after treatment at $180^{\circ}C$ for 1 hr and at room temperature for 4 hr by using KOH solution, resulting from the nano-sized structures such as pores and bumps. This indicates that porous SiC surface can be achieved by using purely chemical treatment.

• Membrane Journal
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• v.25 no.2
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• pp.115-122
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• 2015

$SiO_2{\cdot}B_2O_3$ was prepared by trimethylborate (TMB)/tetraethylorthosilicate (TEOS) mole ratio 0.01 at $800^{\circ}C$. PDMS[poly(dimethysiloxane)]-$SiO_2{\cdot}B_2O_3$ composite membranes were prepared by adding porous $SiO_2{\cdot}B_2O_3$ to PDMS. To investigate the characteristics of PDMS-$SiO_2{\cdot}B_2O_3$ composite membrane, we observed PDMS-$SiO_2{\cdot}B_2O_3$ composite membrane using TG-DTA, FT-IR, BET, X-ray, and SEM. PDMS-$SiO_2{\cdot}B_2O_3$ composite membrane was studied on the permeabilities of $H_2$ and $N_2$ and the selectivity ($H_2/N_2$). Following the results of TG-DTA, BET, X-ray, FT-IR, $SiO_2{\cdot}B_2O_3$ was the amorphous porous $SiO_2{\cdot}B_2O_3$ with $247.6868m^2/g$ surface area and $37.7821{\AA}$ the mean of pore diameter. According to the TGA measurements, the thermal stability of PDMS-$SiO_2{\cdot}B_2O_3$ composite membrane was enhanced by inserting $SiO_2{\cdot}B_2O_3$. SEM observation showed that the size of dispersed $SiO_2{\cdot}B_2O_3$ in the PDMS-$SiO_2{\cdot}B_2O_3$ composite membrane was about $1{\mu}m$. The increasing of $SiO_2{\cdot}B_2O_3$ content in PDMS leaded the following results in the gas permeation experiment: the permeability of both $H_2$ and $N_2$ was increased, and the permeability of $H_2$ was higher than $N_2$, but the selectivity($H_2/N_2$) was decreased.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1760-1762
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• 2000

본 논문은 기존의 $Si_{3}N_4$, SiN 물질 대신 Pt를 사용해 HF 용액속에서 다공질 실리콘과 전극을 동시에 형성하는 기술을 개발하였다. Pt를 실리콘 웨이퍼 위에 직접 증착한 후 습식 에칭과 Lift-off 공정을 사용하여 Pt를 패터닝하였다. 습식 에칭은 에칭용액의 온도를 일정하게 유지하는 것이 중요하며, 증착한 Pt 박막이 BOE 에칭에 견디고, Lift-off 공정이 가능하기 위해서는 기판온도를 l100$^{\circ}C$ 이하로 해야한다. Pt를 사용하면 기존의 mask에서 발생하는 가장자리 부분에서의 전류 집중이 방지되기 때문에 다공질 실리콘이 일정한 깊이로 형성되고, Al대신 오믹 전극으로 사용할 수 있다. 현재 Pt를 mask와 전극으로 이용한 P-I-N UV detector, 광 바이오센서, 습도센서 제작등에 응용 연구가 진행되고 있다.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.92-97
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• 2002

We establish a visible light emission from porous polycrystalline silicon nano structure(PPNS). The PPNS layer are formed on heavily doped n-type Si substrate. 2um thickness of undoped polycrystalline silicon deposited using LPCVD (Low Pressure Chemical Vapor Deposition) anodized in a HF: ethanol(=1:1) as functions of anodizing conditions. And then a PPNS layer thermally oxidized for 1 hr at $900 ^{\circ}C$. Subsequently, thin metal Au as a top electrode deposited onto the PPNS surface by E-beam evaporator and, in order to establish ohmic contact, an thermally evaporated Al was deposited on the back side of a Si-substrate. When the top electrode biased at +6V, the electron emission observed in a PPNS which caused by field-induces electron emission through the top metal. Among the PPNSs as functions of anodization conditions, the PPNS anodized at a current density of $10mA/cm^2$ for 20 sec has a lower turn-on voltage and a higher emission current. Furthermore, the behavior of electron emission is uniformly maintained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.69-72
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• 2002

We establish a visible light emission from porous polycrystalline silicon nano structure(PPNS). The PPNS layer are formed on heavily doped n-type Si substrate. 2um thickness of undoped polycrystalline silicon deposited using LPCVD (Low Pressure Chemical Vapor Deposition) anodized in a HF: ethanol(=1:1) as functions of anodizing conditions. And then a PPNS layer thermally oxidized for 1 hr at $900^{\circ}C$. Subsequently, thin metal Au as a top electrode deposited onto the PPNS surface by E-beam evaporator and, in order to establish ohmic contact, an thermally evaporated Al was deposited on the back side of a Si-substrate. When the top electrode biased at +6V, the electron emission observed in a PPNS which caused by field-induces electron emission through the top metal. Among the PPNSs as functions of anodization conditions, the PPNS anodized at a current density of $10mA/cm^{2}$ for 20 sec has a lower turn-on voltage and a higher emission current. Furthermore, the behavior of electron emission is uniformly maintained.

• Membrane Journal
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• v.28 no.4
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• pp.221-232
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• 2018

The silica containing carbon ($C-SiO_2$) membranes were fabricated using poly(imide siloxane)(Si-PI) and polyvinylpyrrolidone (PVP) blended polymer. The characteristics of porous carbon structures prepared by the pyrolysis of polymer blends were related with the micro-phase separation behaviors of the two polymers. The glass transition temperatures ($T_g$) of the mixed polymer blends of Si-PI and PVP were observed with a single $T_g$ using differential scanning calorimetry. Furthermore, the nitrogen adsorption isotherms of the $C-SiO_2$ membranes were investigated to define the characteristics of porous carbon structures. The $C-SiO_2$ membranes derived from Si-PI/PVP showed the type IV isotherm and possessed the hysteresis loop, which was associated with the mesoporous carbon structures. For the molecular sieving probe, the $C-SiO_2$ membranes were prepared with the ratio of Si-PI/PVP and the pyrolysis conditions, such as the pyrolysis temperature and the isothermal times. Consequently, the $C-SiO_2$ membranes prepared by the pyrolysis of Si-PI/PVP at $550^{\circ}C$ with the isothermal time of 120 min showed the $O_2$ permeability of 820 Barrer ($1{\times}10^{-10}cm^3(STP)cm/cm^2{\cdot}s{\cdot}cmHg$) and $O_2/N_2$ selectivity of 14.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.4
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• pp.149-154
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• 2004

This paper presents a silicon probe tip for vertical probe card application. The silicon probe tip was fabricated using MEMS technology such as porous silicon micromachining and deep- RIE (reactive ion etching). The thickness of the silicon epitaxial layers was 5 ${\mu}{\textrm}{m}$ and 7 ${\mu}{\textrm}{m}$, respectively. The width and length were 40 ${\mu}{\textrm}{m}$ and 600 ${\mu}{\textrm}{m}$, respectively. The probe structure was a multilayered structure and was composed of Au/Ni-Cr/Si$_3$N$_4$/n-epi layers. The height of the curled probe tip was measured as a function of the annealing temperature and time. Resistance characteristics of the probe tip were measured using a touchdown test.

• Journal of the Korean Ceramic Society
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• v.25 no.1
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• pp.59-65
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• 1988

To develop porous glass membranes used for a effective membrane-separation process, porous glasses and glass membranes were prepared from the sodium borosilicate parent glass by the phaseseparation technique and effects of heat-treatment and leaching conditions on their characteristics were investigated. The crack-free glass membranes could be fabricated from the 9.4 Na2-O-30.7 B2O3-59.2 SiO2-0.7 Al2O3(wt%) parent glass by heat-treatment at the lower temperature(550-570$^{\circ}C$) and for longer than 45 hrs for the phase separation, followed by leaching with 3N-HCl＋60% ethylene glycol solution at 90$^{\circ}C$ over 25 hrs. Porous glasses prepared in this work showed large specific surface areas(400㎡/g) and narrow pore size distribution with the mean pore radius of 14${\AA}$ enough for the application as reverse osmosis membranes. The salt-rejection efficiency and product-flux of the glass membranes heat-treated at 570$^{\circ}C$ for 80 hrs were found to be 51.8% and 270cc/㎡. hr, respectively. This result suggests that the porous glass membranes fabricated in this study could be applied for the reverse osmosis process.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.281-281
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• 2010

Very low refractive index (<1.4) materials have been proved to be the key factor improving the performance of various optical components, such as reflectors, filters, photonic crystals, LEDs, and solar cell. Highly porous SiO2 are logically designed for ultralow refractive index materials because of the direct relation between porosity and index of refraction. Among them, ordered macroporous SiO2 is of potential material since their theoretically low refractive index ~1.10. However, in the conventional synthesis of ordered macroporous SiO2, the time required for the crystallization of organic nanoparticles, such as polystyrene (PS), from colloidal solution into well ordered template is typical long (several days for 1 cm substrate) due to the low interaction between particles and particle - substrate. In this study, polystyrene - polyacrylic acid (PS-AA) nanoparticles synthesized by miniemulsion polymerization method have hydrophilic polyacrylic acid tails on the surface of particles which increase the interaction between particle and with substrate giving rise to the formation of PS-AA film by simply spin - coating method. Less ordered with controlled thickness films of PS-AA on silicon wafer were successfully fabricated by changing the spinning speed or concentration of colloidal solution, as confirmed by FE-SEM. Based on these template films, a series of macroporous SiO2 films whose thicknesses varied from 300nm to ~1000nm were fabricated either by conventional sol - gel infiltration or gas phase deposition followed by thermal removal of organic template. Formations of SiO2 films consist of interconnected air balls with size ~100 nm were confirmed by FE-SEM and TEM. These highly porous SiO2 show very low refractive indices (<1.18) over a wide range of wavelength (from 200 to 1000nm) as shown by SE measurement. Refraction indices of SiO2 films at 633nm reported here are of ~1.10 which, to our best knowledge, are among the lowest values having been announced.

• Korean Journal of Materials Research
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• v.28 no.2
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• pp.124-128
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• 2018

N-type porous silicon (PS) layers and thermally oxidized PS layers have been characterized by various measuring techniques such as photoluminescence (PL), Raman spectroscopy, IR, HRSEM and transmittance measurements. The top surface of PS layer shows a stronger photoluminescence peak than its bottom part, and this is ascribed to the difference in number of fine silicon particles of 2~3 nm in diameter. Observed characteristics of PL spectra are explained in terms of microstructures in the n-type PS layers. Common features for both p-type and n-type PS layers are as follows: the parts which can emit visible photoluminescence are not amorphous, but crystalline, and such parts are composed of nanocrystallites of several nm's whose orientations are slightly different from Si substrate, and such fine silicon particles absorb much hydrogen atoms near the surfaces. Light emission is strongly dependent on such fine silicon particles. Photoluminescence is due to charge carrier confinement in such three dimensional structure (sponge-like structure). Characteristics of visible light emission from n-type PS can be explained in terms of modification of band structure accompanied by bandgap widening and localized levels in bandstructure. It is also shown that hydrogen and oxygen atoms existing on residual silicon parts play an important role on emission stability.