Field Emission properties of Porous Polycrystalline silicon Nano-Structure

다결정 다공질 실리콘 나노구조의 전계 방출 특성

  • 이주원 (한국과학기술원 마이크로시스템 센터) ;
  • 김훈 (한국과학기술원 마이크로시스템 센터) ;
  • 박종원 (한국과학기술원 마이크로시스템 센터) ;
  • 이윤희 (한국과학기술원 정보재료소자연구 센터) ;
  • 장진 (경희대학교 물리학과) ;
  • 주병권 (한국과학기술원 마이크로시스템 센터)
  • Published : 2002.04.27

Abstract

We establish a visible light emission from porous polycrystalline silicon nano structure(PPNS). The PPNS layer are formed on heavily doped n-type Si substrate. 2um thickness of undoped polycrystalline silicon deposited using LPCVD (Low Pressure Chemical Vapor Deposition) anodized in a HF: ethanol(=1:1) as functions of anodizing conditions. And then a PPNS layer thermally oxidized for 1 hr at $900^{\circ}C$. Subsequently, thin metal Au as a top electrode deposited onto the PPNS surface by E-beam evaporator and, in order to establish ohmic contact, an thermally evaporated Al was deposited on the back side of a Si-substrate. When the top electrode biased at +6V, the electron emission observed in a PPNS which caused by field-induces electron emission through the top metal. Among the PPNSs as functions of anodization conditions, the PPNS anodized at a current density of $10mA/cm^{2}$ for 20 sec has a lower turn-on voltage and a higher emission current. Furthermore, the behavior of electron emission is uniformly maintained.

Keywords