KIEE International Transactions on Electrophysics and Applications

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

Fabrication and Characterization of Silicon Probe Tip for Vertical Probe Card Using MEMS Technology

  • Kim, Young-Min (Department of Electronics, Kyungpook National University) ;
  • Yu, In-Sik (Mobile Information Communication, Kyungdong College of Techno-Informatio) ;
  • Lee, Jong-Hyun (Department of Electronics, Kyungpook National University)
  • Published : 2004.08.01
Download PDF
⟨ Previous Next ⟩

Abstract

This paper presents a silicon probe tip for vertical probe card application. The silicon probe tip was fabricated using MEMS technology such as porous silicon micromachining and deep- RIE (reactive ion etching). The thickness of the silicon epitaxial layers was 5 ${\mu}{\textrm}{m}$ and 7 ${\mu}{\textrm}{m}$, respectively. The width and length were 40 ${\mu}{\textrm}{m}$ and 600 ${\mu}{\textrm}{m}$, respectively. The probe structure was a multilayered structure and was composed of Au/Ni-Cr/Si$_3$N$_4$/n-epi layers. The height of the curled probe tip was measured as a function of the annealing temperature and time. Resistance characteristics of the probe tip were measured using a touchdown test.

Keywords

References

  1. Shin'ichiro Asai, Kazuo Kato, Noriaki Nakazaki, and Yukihiko Nakajima, 'Probe card with probe pins grown by the vapor-liquid-solid (VLS) method', IEEE Trans. Comp., Package. Manufat. Technol., part A. vol. 19, pp. 258-267,1996
  2. C. Barsotti, S.Tremaine. and M. Bonham, 'Very high density probing', in Proceedings of the IEEE International Testing Conference, pp. 608-614, 1988
  3. S. Maekawa, M. Takemoto, Y. Kashiba, Y. Deguchi, K. Miki, and T. Nagata, 'Highly Reliable Probe Card for Wafer Testing', Electronic Components and Technology Conference, pp. 1152-1156, 2000
  4. Y. Zhang, Y. Whzng, R. B. Marcus, 'Thermally actuated rnicroprobes for a new wafer probe card,' IEEE Journal of Microelectromechanical Systems, vol. 8, pp. 43-49, 1999
  5. S. Hong, K. Lee, J. C. Bravman, 'Design and fabrication of a monolithic high-density probe card for high-frequency on-wafer testing,' in Technical Digest., Electron Devices Meeting, pp. 289-292, 1989
  6. B. H. Kim, S. J. Park, B. L. Lee, J. H. Lee, B. G. Min, S. D. Choi, D. I. Cho, K. J. Chun, 'A novel MEMS silicon probe card,' in the 14th IEEE International Conference on MEMS, pp. 368-371, 2002
  7. K. Kataoka, S. Kawamura, T. Itoh, T. Suga, 'Low contact-force and compliant MEMS probe card utilizing fritting contact,' in the Fifteenth IEEE International Conference on MEMS, pp. 364-367, 2002
  8. Y. M. Kim, D. S. Eun, S. G. Park, C. S. Jo, J. H. Lee, 'Characteristics of Cantilever Beam Fabricated by Porous Silicon Micromachining for Flow Sensor Application', IEEE SENSORS 2003, p.64l-642, 2003
  9. Y. M. Kim, C. T. Seo, D. S. Eun, S. G.. Park, C. S. Jo, J. H. ee, 'Characteristics of Cantilever Beam Fabricated by Porous Silicon Micromachining for Flow Sensor Application', Proceedings of IEEE International Conference on SENSORS 2003, p.642646, 2003
  10. Y. M. Kim, K. Y. Noh, J. Y. Park, Y. D. Kim, I. S. Yu, C. S. Cho, J. H. Lee, 'Fabrication of Oxidized Porous Silicon(OPS) Air-Brdige for RF Application Using Micromachining Technology', Journal of the Korean Physical Socity, p.S268-S270, 2001
  11. Y. D. Kim, J. H. Sim, J. W. Nam, and J. H. Lee, 'Fabrication of a Silicon Micro-Probe for Vertical Probe Card Application', Japanese Journal of Applied Physics, pp. 7070-7073, 1998