• 한국세라믹학회지
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• 제36권6호
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• pp.604-610
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• 1999

Silicide layer structures and morphology degradation of the surface and interface of the silicide layers for he Co/refractory metal bilayer sputter-deposited on the P-doped polycrystalline Si substrate and subjected to rapid thermal annealing were investigated and compared with those on the single Si substrate. The CoSi-CoSi2 phase transition temperature is lower an morphology degradation of the silcide layer occurs more severely for the Co/refractorymetal bilayer on the P-doped polycrystalline Si substrate than on the single Si substrate. Also the final layer structure and the morphology of the films after silicidation annealing was found to depend strongly upon the interlayer metal. The layer structure after silicidation annealing of Co/Hf/doped-poly Si is Co-Hf alloy/polycrystalline CoSi2/poly Si substrate while that of Co/Nb is polycrystalline CoSi2/NbSi2/polycrystalline CoSi2/poly Si.

• 한국기계가공학회지
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• 제7권3호
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• pp.67-74
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• 2008

Polycrystalline diamonds(PCD) tools are widely used in machining a large variety of advanced materials. However, the manufacture of PCD tool blanks is not an economical process. The shaping of PCD blanks with conventional machining methods(such a grinding) is long, labor-intensive process. This paper reports experimental investigation of the influence of electrical machining conditions on the metal removal rate of WEDM of PCD. Experimental results show that the longer pulse-on time and the shorter pulse-off time increase the metal removal rate and worsen the surface quality. The smaller grain size of diamond yields the metal removal rate and shows the better surface quality. Higher electrical conductivity of water yields worse surface roughness.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권2호
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• pp.166-171
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• 2016

Nickel silicide is main issue in Polycrystalline silicon Thin Film Transistor (TFT) which is made by Metal Induced Lateral Crystallization (MILC) method. This Nickel silicide acts as a defect center, and this defect is one of the biggest reason of the high leakage current. In this research, we fabricated polycrystalline TFTs with novel method called Edge Cut (EC). With this new fabrication method, we assumed that nickel silicide at the edge of the channel region is reduced. Electrical properties are measured and trap state density also calculated using Levinson & Proano method.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.715-717
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• 2006

$NiCl_2$ vapor was introduced into conventional furnace to conduct vapor-induced crystallization (VIC) process. We made the metal chloride atmosphere by sublimating the $NiCl_2$ compound. The $NiCl_2$ atmosphere enhanced the crystallization of amorphous silicon thin films. As the result, polycrystalline Si film with large grain size and low metal contamination has been obtained.

• 한국세라믹학회지
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• 제26권6호
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• pp.795-801
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• 1989

The polycrystalline mullite fiber was synthesized from various combination of starting materials including metal alkoxides and colloidal sol by the sol-gel process. The best spinnability was observed in the sol which showed shear thinning and hysteresis (i.e., thixotropic flow), indicating that the network structure was broken down as the shear rate increased. The mullite fiber was polycrystalline after firing and characterized by thermal analysis, XRD, FT-IR spectroscopy, rheological measurements, and SEM.

• 멤브레인
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• 제32권6호
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• pp.367-382
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• 2022

유기 전구체와 금속 이온, 또는 금속-옥소 클로스터 간의 규칙적 배열을 통한 종의 다양성을 장점으로 하는 금속-유기 골격체(Metal-Organic Frameworks, MOFs)는 에너지 사용량이 높은 상변화 기반 분리공정을 대체할 수 있는 에너지 효율적인 막 기반 분리 기술의 개발 가능성을 열어주었다. 이에 최근 10년 동안 다결정 MOFs 분리막 합성 기술에서 상당한 진전이 있었지만, 매우 제한된 종류의 MOFs만이 활용되고 있다. 이러한 기술 개발의 정체는 다결정 분리막의 비 선택적인 확산 경로인 결정 사이 결함(intercrystalline defects)에 대한 명확한 해결법이 없기 때문이다. 후처리 성능 제어기술(postsynthetic modifications, PSMs)은 기존 분리막을 플랫폼으로 활용하고 이를 물리적 그리고/혹은 화학적으로 처리함을 통해 분리 특성을 개선 혹은 변경하는 기술을 말한다. PSMs 기술은 특정 분리막을 개발하는 데 있어서 새로운 MOFs를 설계하거나 막 합성 기술을 개발하지 않아도 된다는 장점이 있어서 다결정 MOF 분리막의 다양성을 제공하기 위한 새로 부상하는 전략으로 평가 된다. 본 총설에서는 PSMs 기술을 7개의 세부기술((1) 공유결합법, (2) 결정간 결함 플러깅법, (3) 결정 내부 결함 치유법, (4) 기공내 기능성 소재 함침법, (5) 기공 경화법, (6) 전구체 치환법 및 (7) 비정질화법)로 분류하고, 각 세부기술의 연구 동향 및 도전과제 그리고 향후 연구 방향에 대해 논의하고자 한다.

• 한국전기전자재료학회논문지
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• 제31권2호
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• pp.74-79
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• 2018

In this report, the results of a systematic study on the effects of polycrystalline silicon gate depletion on the reliability characteristics of metal-oxide semiconductor field-effect transistor (MOSFET) devices were discussed. The devices were fabricated using standard complimentary metal-oxide semiconductor (CMOS) processes, wherein phosphorus ion implantation with implant doses varying from $10^{13}$ to $5{\times}10^{15}cm^{-2}$ was performed to dope the polycrystalline silicon gate layer. For implant doses of $10^{14}/cm^2$ or less, the threshold voltage was increased with the formation of a depletion layer in the polycrystalline silicon gate layer. The gate-depletion effect was more pronounced for shorter channel lengths, like the narrow-width effect, which indicated that the gate-depletion effect could be used to solve the short-channel effect. In addition, the hot-carrier effects were significantly reduced for implant doses of $10^{14}/cm^2$ or less, which was attributed to the decreased gate current under the gate-depletion effects.

• 한국재료학회지
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• 제18권9호
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• pp.507-510
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• 2008

Electrical properties of multi-channel metal-induced unilaterally precrystallized polycrystalline silicon thin-film transistor (MIUP poly-Si TFT) devices and circuits were investigated. Although their structure was integrated into small area, reducing annealing process time for fuller crystallization than that of conventional crystal filtered MIUP poly-Si TFTs, the multi-channel MIUP poly-Si TFTs showed the effect of crystal filtering. The multi-channel MIUP poly-Si TFTs showed a higher carrier mobility of more than 1.5 times that of the conventional MIUP poly-Si TFTs. Moreover, PMOS inverters consisting of the multi-channel MIUP poly-Si TFTs showed high dynamic performance compared with inverters consisting of the conventional MIUP poly-Si TFTs.

• 한국전기전자재료학회논문지
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• 제33권5호
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• pp.344-349
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• 2020

Modern thin film deposition processes require high deposition rates, low costs, and high-quality films. Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) meets these requirements. AP-PECVD causes little damage on thin film deposition surfaces compared to conventional PECVD. Moreover, a higher deposition rate is expected due to the surface heating effect of atomic hydrogens in AP-PECVD. In this study, polycrystalline silicon thin film was deposited at a low temperature of 100℃ and then AP-PECVD experiments were performed with various plasma powers and hydrogen gas flow rates. A deposition rate of 15.2 nm/s was obtained at the VHF power of 400 W. In addition, a metal foam showerhead was employed for uniform gas supply, which provided a significant improvement in the thickness uniformity.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.49.1-49.1
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• 2010

본 연구에서는 증착법에 의해 제조된 다결정 실리콘을 이용한 태양전지 제작과 관련하여 다결정 실리콘 씨앗층 제조를 위한 기판에 대하여 연구를 수행하였다. 다결정 실리콘 씨앗층을 제조할 수 있는 기술중 aluminum-induced layer exchange(ALILE) 공정을 이용하여 다결정 실리콘 씨앗층을 제조하였다. glass/Al/oxide/a-Si 구조로 알루미늄과 비정질 실리콘 계면에 알루미늄 산화막을 다양한 두께로 형성시켜, 알루미늄 유도 결정화에서 산화막의 두께가 결정화 특성에 미치는 영향, 결정결함, 결정크기에 대하여 연구하였다. 형성된 다결정 실리콘 씨앗층 막의 특성은 OM, SEM, FIB, EDS, Raman spectroscopy, XRD, EBSD 을 이용하여 분석하였다. 그 결과 산화막의 두께가 증가할수록 결함도 함께 증가하였다. 16nm 두께의 산화막 구조에서 <111> 방향의 우선배향성을 가진, $10{\mu}m$의 sub-grain 결정립을 갖는 씨앗층을 제조 하였다.