DOI QR코드

DOI QR Code

Edge Cut Process for Reducing Ni Content at Channel Edge Region in Metal Induced Lateral Crystallization Poly-Si TFTs

  • SEOK, Ki Hwan (Department of Materials Science and Engineering, Seoul National University) ;
  • Kim, Hyung Yoon (Department of Materials Science and Engineering, Seoul National University) ;
  • Park, Jae Hyo (Department of Materials Science and Engineering, Seoul National University) ;
  • Lee, Sol Kyu (Department of Materials Science and Engineering, Seoul National University) ;
  • Lee, Yong Hee (Department of Materials Science and Engineering, Seoul National University) ;
  • Joo, Seung Ki (Department of Materials Science and Engineering, Seoul National University)
  • Received : 2015.08.24
  • Accepted : 2015.11.04
  • Published : 2016.04.30

Abstract

Nickel silicide is main issue in Polycrystalline silicon Thin Film Transistor (TFT) which is made by Metal Induced Lateral Crystallization (MILC) method. This Nickel silicide acts as a defect center, and this defect is one of the biggest reason of the high leakage current. In this research, we fabricated polycrystalline TFTs with novel method called Edge Cut (EC). With this new fabrication method, we assumed that nickel silicide at the edge of the channel region is reduced. Electrical properties are measured and trap state density also calculated using Levinson & Proano method.

Keywords

References

  1. M. Stewart, R. S. Howell, L. Pires, and M. K. Hatalis, "Polysilicon TFT technology for active matrix OLED displays," IEEE Transactions on Electron Devices, vol. 48, no. 5, pp. 845-851, May, 2001. https://doi.org/10.1109/16.918227
  2. D. J. Park, and B. O. Park, "High Performance of Ultralow Temperature Polycrystalline Silicon Thin Film Transistor on Flexible Metal Foil Substrate," Japanese Journal of Applied Physics, vol. 49, no. 5, May, 2010.
  3. K. Yamamoto, M. Yoshimi, Y. Tawada, Y. Okamoto, A. Nakajima, and S. Igari, "Thin-film poly-Si solar cells on glass substrate fabricated at low temperature," Applied Physics a-Materials Science & Processing, vol. 69, no. 2, pp. 179-185, Aug, 1999. https://doi.org/10.1007/s003390050988
  4. T. J. King, and K. C. Saraswat, "Low-Temperature (Less-Than-or-Equal-to 550-Degrees-C) Fabrication of Poly-Si Thin-Film Transistors," IEEE Electron Device Letters, vol. 13, no. 6, pp. 309-311, Jun, 1992. https://doi.org/10.1109/55.145067
  5. H. Kuriyama, S. Kiyama, S. Noguchi, T. Kuwahara, S. Ishida, T. Nohda, K. Sano, H. Iwata, H. Kawata, M. Osumi, S. Tsuda, S. Nakano, and Y. Kuwano, "Enlargement of Poly-Si Film Grain-Size by Excimer Laser Annealing and Its Application to High-Performance Poly-Si Thin-Film Transistor," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 30, no. 12B, pp. 3700-3703, Dec, 1991. https://doi.org/10.1143/JJAP.30.3700
  6. M. Miyasaka, and J. Stoemenos, "Excimer laser annealing of amorphous and solid-phase-crystallized silicon films," Journal of Applied Physics, vol. 86, no. 10, pp. 5556-5565, Nov 15, 1999. https://doi.org/10.1063/1.371560
  7. S. W. Lee, and S. K. Joo, "Low temperature poly- Si thin-film transistor fabrication by metal-induced lateral crystallization," IEEE Electron Device Letters, vol. 17, no. 4, pp. 160-162, Apr, 1996. https://doi.org/10.1109/55.485160
  8. F. Oki, Y. Ogawa, and Y. Fujiki, "Effect of Deposited Metals on Crystallization Temperature of Amorphous Germanium Film," Japanese Journal of Applied Physics, vol. 8, no. 8, pp. 1056-&, 1969. https://doi.org/10.1143/JJAP.8.1056
  9. W. J. wang, I. S. Kang, J. M. Yang, C. W. Ahn, H. S. Seo, G. H. Kim, and S. K. Hong, "Dynamic Characteristics of Metal-Induced Laterally Crystallized Polycrystalline Silicon Thin-Film Transistor Devices and Circuits Fabricated with Asymmetric Precrystallization," Applied Physics, vol. 48, no. 2, Feb, 2009.
  10. N. K. Song, Y. S. Kim, M. S. Kim, S. H. Han, and S. K. Joo, "A fabrication method for reduction of silicide contamination in polycrystalline-silicon thin-film transistors," Electrochemical and Solid State Letters, vol. 10, no. 5, pp. H142-H144, 2007. https://doi.org/10.1149/1.2710962
  11. C. M. Hu, Y. C. S. Wu, and C. C. Lin, "Improving the electrical properties of NILC poly-Si films using a gettering substrate," IEEE Electron Device Letters, vol. 28, no. 11, pp. 1000-1003, Nov, 2007. https://doi.org/10.1109/LED.2007.907267
  12. J. Levinson, F. R. Shepherd, P. J. Scanlon, W. D. Westwood, G. Este, and M. Rider, "Conductivity Behavior in Polycrystalline Semiconductor Thin-Film Transistors," Journal of Applied Physics, vol. 53, no. 2, pp. 1193-1202, 1982. https://doi.org/10.1063/1.330583
  13. R. E. Proano, R. S. Misage, and D. G. Ast, "Development and Electrical-Properties of Undoped Polycrystalline Silicon Thin-Film Transistors," IEEE Transactions on Electron Devices, vol. 36, no. 9, pp. 1915-1922, Sep, 1989. https://doi.org/10.1109/16.34270