Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Low Temperature Polycrystalline Silicon Deposition by Atmospheric Pressure Plasma Enhanced CVD Using Metal Foam Showerhead

다공성 금속 샤워헤드가 적용된 상압플라즈마 화학기상증착법을 이용한 저온 다결정 실리콘 증착 공정

  • 박형규 (한경대학교 IT 융합연구소) ;
  • 송창훈 (연세대학교 신소재공학과) ;
  • 오훈정 (연세대학교 BIT 마이크로팹 연구센터) ;
  • 백승재 (한경대학교 IT 융합연구소)
  • Received : 2020.05.11
  • Accepted : 2020.07.01
  • Published : 2020.09.01
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Abstract

Modern thin film deposition processes require high deposition rates, low costs, and high-quality films. Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) meets these requirements. AP-PECVD causes little damage on thin film deposition surfaces compared to conventional PECVD. Moreover, a higher deposition rate is expected due to the surface heating effect of atomic hydrogens in AP-PECVD. In this study, polycrystalline silicon thin film was deposited at a low temperature of 100℃ and then AP-PECVD experiments were performed with various plasma powers and hydrogen gas flow rates. A deposition rate of 15.2 nm/s was obtained at the VHF power of 400 W. In addition, a metal foam showerhead was employed for uniform gas supply, which provided a significant improvement in the thickness uniformity.

Keywords

References

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