• 제목/요약/키워드: polycrystalline 3C-SiC

검색결과 159건 처리시간 0.026초

극한 환경 마이크로 화학센서용 다결정 3C-SiC 다이오드 제작과 그 특성 (Fabrication of polycrystalline 3C-SiC diode for harsh environment micro chemical sensors and their characteristics)

  • 심재철;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.195-196
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    • 2009
  • This paper describes the fabrication and characteristics of polycrystalline 3C-SiC thin film diodes for extreme environment applications, in which the this thin film was deposited onto oxidized Si wafers by APCVD using HMDS In this work, the optimized growth temperature and HMDS flow rate were $1,100^{\circ}C$ and 8sccm, respectively. A Schottky diode with a Au, Al/poly 3C-SiC/$SiO_2$/Si(n-type) structure was fabricated and its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) values were measured as 0.84V, over 140V, 61nm, and $2.7{\times}10^{19}cm^2$, respectively. To produce good ohmic contact, Al/3C-SiC were annealed at 300, 400, and $500^{\circ}C$ for 30min under a vacuum of $5.0{\times}10^{-6}$Torr. The obtained p-n junction diode fabricated by poly 3C-SiC had similar characteristics to a single 3C-SiC p-n junction diode.

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CVD에 의한 M/NEMS용 다결정 3C-SiC 박막 성장 (Growth of polycrystalline 3C-SiC thin films for M/NEMS applications by CVD)

  • 정귀상;김강산;정준호
    • 센서학회지
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    • 제16권2호
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    • pp.85-90
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    • 2007
  • This paper presents the growth conditions and characteristics of polycrystalline 3C-SiC (silicon carbide) thin films for M/NEMS applications related to harsh environments. The growth of the 3C-SiC thin film on the oxided Si wafers was carried out by APCVD using HMDS (hexamethyildisilane: $Si_{2}(CH_{3})_{6})$ precursor. Each samples were analyzed by XRD (X-ray diffraction), FT-IR (fourier transformation infrared spectroscopy), RHEED (reflection high energy electron diffraction), GDS (glow discharge spectrometer), XPS (X-ray photoelectron spectroscopy), SEM (scanning electron microscope) and TEM (tunneling electro microscope). Moreover, the electrical properties of the grown 3C-SiC thin film were evaluated by Hall effect. From these results, the grown 3C-SiC thin film is very good crystalline quality, surface like mirror and low defect. Therefore, the 3C-SiC thin film is suitable for extreme environment, Bio and RF M/NEMS applications in conjunction with Si fabrication technology.

마그네트론 RIE을 이용한 M/NEMS용 다결정 3C-SiC 식각 연구 (A study on polycrystalline 3C-SiC etching with magnetron applied reactive ion etching for M/NEMS applications)

  • 정귀상;온창민;남창우
    • 센서학회지
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    • 제16권3호
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    • pp.197-201
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    • 2007
  • The magnetron reactive ion etching (RIE) characteristics of polycrystalline (poly) 3C-SiC grown on $SiO_{2}$/Si substrate by APCVD were investigated. Poly 3C-SiC was etched by $CHF_{3}$ gas, which can form a polymer as a function of side wall protective layers, with additive $O_{2}$ and Ar gases. Especially, it was performed in magnetron RIE, which can etch SiC at a lower ion energy than a commercial RIE system. Stable etching was achieved at 70 W and the poly 3C-SiC was undamaged. The etch rate could be controlled from $20\;{\AA}/min$ to $400\;{\AA}/min$ by the manipulation of gas flow rates, chamber pressure, RF power, and electrode gap. The best vertical structure was improved by the addition of 40 % $O_{2}$ and 16 % Ar with the $CHF_{3}$ reactive gas. Therefore, poly 3C-SiC etched by magnetron RIE can expect to be applied to M/NEMS applications.

도핑량에 따른 다결정 3C-SiC 마이크로 공진기의 특성 (Characteristics of polycrystalline 3C-SiC micro resonators with doping concentrations)

  • 마이 피 훙;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.131-131
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    • 2009
  • This paper describes the fabrication and characteristics of polycrystalline (poly) 3C-SiC microresonators with $3{\times}10^{17}{\sim}1{\times}10^{19}cm^{-3}$ in-situ N-doping concentrations. In this work, the crystallinity, carrier concentration and surface morphology of the grown thin films were evaluated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The 1.2 ${\mu}m$ thick cantilvers and the 0.4 ${\mu}m$ thick doubly-clamped beam microresonators with various lengths were implemented using in-situ doping poly 3C-SiC thin films. The characteristics of the poly 3C-SiC microresonators were evaluated using quartz and a laser vibrometer under vacuum at room temperature. The resonant frequencies of the SiC microresonators decreased with doping concentrations owing to the reduction of the Young's modulus of the poly 3C-SiC thin films. It was confirmed that the resonant frequencies of the poly 3C-SiC microresonators are controllable by adjusting the doping concentrations.

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초고온용 다결정 3C-SiC 마이크로 압력센서의 제작 (Fabrication of polycrystalline 3C-SiC micro pressure sensors for hightemperature applications)

  • 정귀상
    • 센서학회지
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    • 제19권1호
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    • pp.31-35
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    • 2010
  • High temperature micro pressure sensors were fabricated by using polycrystalline 3C-SiC piezoresistors grown on oxidized SOI substrates by APCVD. These have been made by bulk micromachining under $1{\times}1mm^2$ diaphragm and Si membrane thickness of $20{\mu}m$. The pressure sensitivity of implemented pressure sensors was 0.1 mV/$V{\cdot}bar$. The nonlinearity and the hysteresis of sensors were ${\pm}0.44%{\cdot}FS$ and $0.61%{\cdot}FS$. In the temperature range of $25^{\circ}C{\sim}400^{\circ}C$ with 5 bar FS, TCS (temperature coefficient of sensitivity), TCR (temperature coefficient of resistance), and TCGF (temperature coefficient of gauge factor) of the sensor were -1867 ppm/$^{\circ}C$, -792 ppm/$^{\circ}C$, and -1042 ppm/$^{\circ}C$, respectively.

초고온용 다결정 3C-SiC 마이크로 압력센서의 특성 (Characteristics of polycrystalline 3C-SiC micro pressure sensors for high temperature applications)

  • 덩 샤오 티엔;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.387-388
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    • 2008
  • High temperature micro pressure sensors were fabricated by polycrystalline (poly) 3C-SiC piezoresistors formed by oxidized SOI substrates with APCVD. These have been designed by bulk micromachining below $1{\times}1mm^2$ diaphragm and Si membrane $20{\mu}m$ thick. The pressure sensitivity of fabricated pressure sensor was 0.1 mV/Vbar. The non-linearity of sensor was ${\pm}0.44%$ FS and the hysteresis was 0.61% FS.TCS of pressure sensor was -1867 ppm/$^{\circ}C$, its TCR was -792 ppm/$^{\circ}C$, and TCGF to 5 bar was -1042 ppm/$^{\circ}C$ from 25 to $400^{\circ}C$.

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AlN 버퍼층위에 성장된 M/NEMS용 다결정 3C-SiC 박막의 특성 (Characteristics of polycrystalline 3C-SiC thin films grown on AlN buffer layer for M/NEMS applications)

  • 정귀상;김강산;이종화
    • 센서학회지
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    • 제16권6호
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    • pp.457-461
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    • 2007
  • This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on $SiO_{2}$ and AlN substrates, respectively. The crystallinity and the bonding structure of poly 3C-SiC grown on each substrate were investigated according to various growth temperatures. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD and FT-IR by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was $1100^{\circ}C$. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each substrate were investigated by XPS and Hall Effect, respectively. The chemical compositions of surface of poly 3C-SiC films grown on $SiO_{2}$ and AlN were not different. However, their electron mobilities were $7.65{\;}cm^{2}/V.s$ and $14.8{\;}cm^{2}/V.s$, respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN buffer layer was two times higher than that of 3C-SiC/$SiO_{2}$, a AlN film is a suitable material, as buffer layer, for the growth of poly 3C-SiC thin films with excellent properties for M/NEMS applications.

M/NEMS용 in-situ 도핑된 다결정 3C-SiC 박막 성장 (Epitaxial growth of in-situ doped polycrystalline 3C-SiC for M/NEMS application)

  • 김강산;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.18-19
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    • 2008
  • Polycrystalline(poly) 3C-SiC film is a promising structural material for M/NEMS used in harsh environments, bio and fields. In order to realize poly 3C-SiC based M/NEMS devices, the electrical properties of poly 3C-SiC film have to be optimized. The n-type poly 3C-SiC thin film is deposited by APCVD using HMDS$(Si_2(CH_3)_6)$ as single precursor and are in-situ doped using N2. Resistivity values as low as 0.014 $\Omega$cm were achieved. The carrier concentration increased with doping from $3.0819\times10^{17}$ to $2.2994\times10^{19}cm^{-3}$ and electronicmobility increased from 2.433 to 29.299 $cm^2/V{\cdot}s$.

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고온 화학센서용 다결정 3C-SiC 쇼트키 다이오드 제작과 그 특성 (Fabrication and characteristics of polycrystalline 3C-SiCSchottky diodes for high temperature chemical sensors)

  • 정귀상;안정학
    • 센서학회지
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    • 제17권6호
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    • pp.414-417
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    • 2008
  • This paper describes the fabrication of a Pd/poly 3C-SiC Schottky diode and its characteristics, in which the poly 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2{\times}10^{-3}A/cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

주름진 다결정 3C-SiC 공진기의 특성 (Characteristics of corrugated polycrystalline 3C-SiC resonators)

  • 원영태년;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.251-251
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    • 2008
  • In this work, appropriate corrugated structure is suggested to increase resonant frequency of resonators. Micro beam resonators based on polycrystalline 3C-SiC films which have a two-side corrugation along the length of beams were simulated by finite element method and compared to a same - size flat rectangular. With the dimension of $36\times12\times0.5{\mu}m^3$, the flat cantilever has resonant frequency of 746 kHz. Meanwhile, with this size only corrugation width of $6{\mu}m$ and depth of $0.4{\mu}m$, the corrugated cantilever reaches the resonant frequency at 1.252 MHz, and is 68% larger than that of flat type.

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