Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Fabrication and characteristics of polycrystalline 3C-SiCSchottky diodes for high temperature chemical sensors

고온 화학센서용 다결정 3C-SiC 쇼트키 다이오드 제작과 그 특성

  • 정귀상 (울산대학교 전기전자정보시스템공학부) ;
  • 안정학 (울산대학교 전기전자정보시스템공학부)
  • Published : 2008.11.30
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Abstract

This paper describes the fabrication of a Pd/poly 3C-SiC Schottky diode and its characteristics, in which the poly 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2{\times}10^{-3}A/cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

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References

  1. K. S. Kim and G. S. Chung, "Mechanical properties of polycrystalline 3C-SiC thin films with various doping concentrations", J. Kor. Sensors Soc., vol. 17, no. 4, pp. 256-260, 2008 https://doi.org/10.5369/JSST.2008.17.4.256
  2. C. K. KiM, J. H. Lee, and Y. H. Lee, N. I. Cho, D. J. Kim, and W. P. Kang, "Hydrogen sensing characteristics of Pd-SiC Schottky diode operating at high temperature." J. of Electronic. Materials, vol. 28, No. 3, pp. 202-205, 1999 https://doi.org/10.1007/s11664-999-0014-1
  3. G. S. Chung, K. S. Kim, and J. H. Jeong, "Growth of polycrystalline 3C-SiC thin films for M/NEMS applications by CVD", J. Kor. Sensors Soc., vol. 16, no. 2, pp. 85-90, 2007 https://doi.org/10.5369/JSST.2007.16.2.085
  4. G. S. Chung and J. H. Ahn, "Electrical characteristics of polycrystalline 3C-SiC thin film diodes", J. Kor. Sensors Soc., vol. 16, no. 4, pp. 259-262, 2007 https://doi.org/10.5369/JSST.2007.16.4.259
  5. H. J Im, B. Kaczer, and J. P. Pelz, "Ballistic electron emission microscopy study of schottky contacts on 6H- and 4H-SiC.", Appl. Phys. lett., vol. 72, no. 7, pp. 839-841, 1998 https://doi.org/10.1063/1.120910
  6. S. Roy, C. Jacob, and S. Basu, "Current transport properties of Pd/3C-SiC Schottky junctions with planer and vertical structures.", Solid State Sci.. vol. 6, pp. 377-382, 2004 https://doi.org/10.1016/j.solidstatesciences.2004.01.003