Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Fabrication of polycrystalline 3C-SiC micro pressure sensors for hightemperature applications

초고온용 다결정 3C-SiC 마이크로 압력센서의 제작

  • 정귀상 (울산대학교 전기전자정보시스템공학부)
  • Published : 2010.01.30
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Abstract

High temperature micro pressure sensors were fabricated by using polycrystalline 3C-SiC piezoresistors grown on oxidized SOI substrates by APCVD. These have been made by bulk micromachining under $1{\times}1mm^2$ diaphragm and Si membrane thickness of $20{\mu}m$. The pressure sensitivity of implemented pressure sensors was 0.1 mV/$V{\cdot}bar$. The nonlinearity and the hysteresis of sensors were ${\pm}0.44%{\cdot}FS$ and $0.61%{\cdot}FS$. In the temperature range of $25^{\circ}C{\sim}400^{\circ}C$ with 5 bar FS, TCS (temperature coefficient of sensitivity), TCR (temperature coefficient of resistance), and TCGF (temperature coefficient of gauge factor) of the sensor were -1867 ppm/$^{\circ}C$, -792 ppm/$^{\circ}C$, and -1042 ppm/$^{\circ}C$, respectively.

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References

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