Browse > Article
http://dx.doi.org/10.5369/JSST.2007.16.3.197

A study on polycrystalline 3C-SiC etching with magnetron applied reactive ion etching for M/NEMS applications  

Chung, Gwiy-Sang (School of Electrical Eng., University. of Ulsan)
Ohn, Chang-Min (School of Electrical Eng., University. of Ulsan)
Nam, Chang-Woo (School of Electrical Eng., University. of Ulsan)
Publication Information
Journal of Sensor Science and Technology / v.16, no.3, 2007 , pp. 197-201 More about this Journal
Abstract
The magnetron reactive ion etching (RIE) characteristics of polycrystalline (poly) 3C-SiC grown on $SiO_{2}$/Si substrate by APCVD were investigated. Poly 3C-SiC was etched by $CHF_{3}$ gas, which can form a polymer as a function of side wall protective layers, with additive $O_{2}$ and Ar gases. Especially, it was performed in magnetron RIE, which can etch SiC at a lower ion energy than a commercial RIE system. Stable etching was achieved at 70 W and the poly 3C-SiC was undamaged. The etch rate could be controlled from $20\;{\AA}/min$ to $400\;{\AA}/min$ by the manipulation of gas flow rates, chamber pressure, RF power, and electrode gap. The best vertical structure was improved by the addition of 40 % $O_{2}$ and 16 % Ar with the $CHF_{3}$ reactive gas. Therefore, poly 3C-SiC etched by magnetron RIE can expect to be applied to M/NEMS applications.
Keywords
Polycrystalline 3C-SiC$CHF_{3}$; RIE; M/NEMS;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
연도 인용수 순위
1 S. Roy, C. Zorman, M. Mehregany, R. Deanna, and C. Deeb, 'The mechanic! properties of polycrystalline 3C-SiC films grown on polysilicon substrates by atmospheric pressure chemical-vapor deposition', J. Appl. Phys., vol. 99, p. 44108, 2006   DOI   ScienceOn
2 P. H. Yih and A. J. Steckl, 'Residue-free reactive ion etching of silicon carbide in fluorinated plasmas', J. Electrochem. Soc., vol. 142, no. 8, pp. 312-319, 1995   DOI
3 G. S. Chung, K. S. Kim, and J. H. Jeong, 'Growth of polycrystalline 3C-SiC thin films for MINEMS applications by CVD', J. Korean Sensors Soc., vol. 16, no. 2, pp. 85-90, 2007   과학기술학회마을   DOI
4 P. M. Sarro, 'Silicon carbide as a new MEMS technology', Sensors & Actuators A, vol. 82, pp. 210-218, 2000   DOI   ScienceOn
5 C. A. Zorrnan and M. Mehregany, 'Silicon carbide for MEMS and NEMS - an overview', Proc. of the IEEE, vol. 2, pp. 1109-1114, 2002
6 G. S. Chung, S. Y. Chung, and S. Nishino, 'Reactive ion etching characteristics of 3C-SiC grown on Si wafers', J. KIMMEE, vol. 17, no. 7, pp. 724-728, 2004   과학기술학회마을   DOI   ScienceOn
7 M. Mehregany and C. A. Zorman, 'SiC MEMS: opportunities and challenges for applications in harsh environments', Thin Solid Films, vol. 355356, pp. 518-524, 1999
8 G. S. Chung and C. M. Ohn, 'Ohmic contact characteristics of polycrystalline 3C-SiC for high-temperature MEMS applications', J. Korean Sensors Soc., vol. 15, no. 6, pp. 386-390, 2006   과학기술학회마을   DOI