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http://dx.doi.org/10.5369/JSST.2010.19.1.031

Fabrication of polycrystalline 3C-SiC micro pressure sensors for hightemperature applications  

Chung, Gwiy-Sang (School of Electrical Eng., University of Ulsan)
Publication Information
Journal of Sensor Science and Technology / v.19, no.1, 2010 , pp. 31-35 More about this Journal
Abstract
High temperature micro pressure sensors were fabricated by using polycrystalline 3C-SiC piezoresistors grown on oxidized SOI substrates by APCVD. These have been made by bulk micromachining under $1{\times}1mm^2$ diaphragm and Si membrane thickness of $20{\mu}m$. The pressure sensitivity of implemented pressure sensors was 0.1 mV/$V{\cdot}bar$. The nonlinearity and the hysteresis of sensors were ${\pm}0.44%{\cdot}FS$ and $0.61%{\cdot}FS$. In the temperature range of $25^{\circ}C{\sim}400^{\circ}C$ with 5 bar FS, TCS (temperature coefficient of sensitivity), TCR (temperature coefficient of resistance), and TCGF (temperature coefficient of gauge factor) of the sensor were -1867 ppm/$^{\circ}C$, -792 ppm/$^{\circ}C$, and -1042 ppm/$^{\circ}C$, respectively.
Keywords
polycrystalline 3C-SiC; high temperature; pressure sensor;
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Times Cited By KSCI : 2  (Citation Analysis)
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