Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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A study on polycrystalline 3C-SiC etching with magnetron applied reactive ion etching for M/NEMS applications

마그네트론 RIE을 이용한 M/NEMS용 다결정 3C-SiC 식각 연구

  • 정귀상 (울산대학교 전기전자정보시스템공학부) ;
  • 온창민 (울산대학교 전기전자정보시스템공학부) ;
  • 남창우 (울산대학교 전기전자정보시스템공학부)
  • Published : 2007.05.31
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Abstract

The magnetron reactive ion etching (RIE) characteristics of polycrystalline (poly) 3C-SiC grown on $SiO_{2}$/Si substrate by APCVD were investigated. Poly 3C-SiC was etched by $CHF_{3}$ gas, which can form a polymer as a function of side wall protective layers, with additive $O_{2}$ and Ar gases. Especially, it was performed in magnetron RIE, which can etch SiC at a lower ion energy than a commercial RIE system. Stable etching was achieved at 70 W and the poly 3C-SiC was undamaged. The etch rate could be controlled from $20\;{\AA}/min$ to $400\;{\AA}/min$ by the manipulation of gas flow rates, chamber pressure, RF power, and electrode gap. The best vertical structure was improved by the addition of 40 % $O_{2}$ and 16 % Ar with the $CHF_{3}$ reactive gas. Therefore, poly 3C-SiC etched by magnetron RIE can expect to be applied to M/NEMS applications.

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References

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